Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > drams

drams Search results

total search471 articles
2015-05-15 Verification IP for DDR4 3DS allows higher-density DRAMs
Synopsys' VIP for DDR4 3DS is natively integrated with its Verdi protocol analyser, offering a graphical protocol-aware debug environment that synchronises memory transactions with signals.
2010-08-26 Smart memory chips may replace TCAMs, DRAMs
Huawei Technologies presented its work on a first-gen smart memory packing 32MB, consuming 60W that can eventually replace TCAMs and DRAMs. The device is still under verification.
2004-09-14 Samsung begins making DRAMs on 90nm process
South Korean electronics giant Samsung Electronics Co. Ltd has started mass producing 512Mbit double data rate synchronous DRAMs using a 90nm manufacturing process and 300mm diameter wafers.
2004-05-12 Rambus offers interface IP for DDR, DDR2 DRAMs
Rambus for the first time is offering interface intellectual property for industry-standard double-data-rate, DDR2 and XDR DRAMs.
2005-09-01 Process vs. density in DRAMs
Evaluate the leading DDR2 DRAM devices manufactured by Micron, Samsung, Infineon and Elpida in terms of die size and density
2001-04-15 Multichip DRAMs serve graphics apps
No technology can last forever. So the question arises: how long can multichip package solutions last in the diverse and rapidly changing graphics market?
2002-01-28 Memory makers prepare low-power DRAMs
Major DRAM suppliers are ramping up production on their first generation of power misers intended for use in a host of battery-supported products.
2007-06-01 Lower-voltage DDR2 DRAMs target data center apps
Micron Technology Inc. recently launched low-voltage DDR2 DRAMs that aim to lower server power consumption.
2002-11-07 ISSI rolls automotive DRAMs, SRAMs
Integrated Silicon Solution Inc. has announced a new line of DRAM and SRAM devices targeted for the automotive market.
2004-12-21 Infineon, Nanya to use 70nm process for 300nm DRAMs
Chip makers Infineon Technologies AG and Nanya Technology Corp. from Taiwan recently came up with a 70nm process technology that will be used to produce 300nm DRAM chips based on deep trench cells.
2002-02-12 Infineon samples low-latency DRAMs aimed at networking
Signaling its readiness to fight for the networking market, Infineon Technologies AG said it would start sampling its flavor of low-latency DRAM chips Monday (Feb. 11).
2004-06-01 Infineon exec says no decision yet on DRAMs
A senior executive with Infineon Technologies AG said the chipmaker is eager to maintain its logic IC portfolio but has made no decision on whether to jettison all or part of its memory business.
2002-01-24 Infineon commences volume production of DRAMs on 300mm
Leapfrogging competition, Infineon Technologies has started volume production of 256Mb DRAM chips on 300mm silicon wafers at its Dresden plant.
2006-03-15 Infineon aims for 70nm DRAMs in '06
Infineon Technologies' memory unit outlined its technology roadmap to keep pace in the competitive DRAM market.
2002-05-20 Hynix alerts customers on counterfeit DRAMs
Memory chip manufacturer Hynix Semiconductor Inc. has disclosed that it had discovered counterfeit copies of its 128Mb 133MHz SDRAM modules.
2006-12-28 Elpida makes 1Gbit, 512Mbit DRAMs at 70nm
Japan's Elpida Memory Inc. has begun mass production of the DRAM industry's first 1Gbit and 512Mbit DDR2 SDRAMs using 70nm process technology.
2000-12-05 Driving high capacitance DRAMs in an ECL system
This application note explains the features that are designed into the Motorola MC10H/100H660 4-bit ECL-TTL, load-reducing DRAM driver and how to apply them into a mixed technology system to obtain the best performance versus power ratio.
2010-04-19 DRAMs, NAND flash shortages loom
DRAM and NAND flash memory supplies are tight right now and OEMs could find themselves on the outside looking in for parts.
2008-04-24 DRAMs get beefed up
Responding to harsh DRAM market conditions, DRAM manufacturers are now offering more-efficient designs for both the mainstream DDR2 market and the next-generation DDR3 market.
1999-11-30 Designing a multimedia subsystem with Rambus DRAMs
Direct RDRAMs have three features that make them very efficient for graphics operations: zero delay between reads and writes, independent row and column resources, and pipelined write capability.
2008-06-23 Defective DRAMs bring spot prices down
Spot prices are falling amid reports that there is a flood of defective DRAM parts in the marketplace, which are said to be made by Samsung Electronics Co. Ltd, according to reports in the market.
2007-02-16 Current DRAMs step up computing apps
New technologies and architectures have now emerged for DRAM chips and modules.
2003-07-03 Cisco nixes network DRAMs, pushes high-end SRAMs
Networking giant Cisco Systems has abandoned plans to adopt a DRAM variant it had custom-designed for networking, but is moving forward with a proprietary high-end SRAM design.
2002-08-14 Agere, Samsung to develop DRAMs for next-gen networks
Agere Systems Inc. and Samsung Semiconductor Inc. (SSI) will collaborate to develop 400Mbps Network-DRAMs for relieving data traffic bottlenecks in next-generation networks.
2007-07-23 V58C2128x SB high performance 128Mbit DDR SDRAM
Promos technolgies' V58C2128(804/404/164)SB achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock.
2014-12-19 SRAMs in nextgen IoT and wearable embedded designs
In this article, we will discuss the technology advances that necessitate SRAMs and also the evolving trends in SRAM technology that make it ready to service the needs of the future.
2005-01-04 SIA reports global semiconductor sales surpass $19B in November
Worldwide sales of semiconductors grew to $19.02 billion in November, an increase of 1.3 percent from the $18.8 billion in October, and an increase of 18 percent from the $16.12 billion in October of 2003, the Semiconductor Industry Association (SIA) reported.
2006-08-30 Samsung, Matsushita did not infringe on each other, court rules
Samsung Electronics Co. Ltd and Matsushita Electric Industrial Co. Ltd did not infringe on each other's DRAM-related patents, a U.S. district court has ruled last week.
2007-07-24 Qimonda ships samples of 75nm Mobile DRAM
Qimonda is sampling its first 512Mbit Mobile DRAMs in 75nm geometries.
2006-04-19 Memory bulletin: NAND down, DRAM tight
Prices for DRAMs and NAND flash memories went in opposite directions last week amid lackluster demand in the market, according to Gartner Dataquest Inc. on April 15.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

Back to Top