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2015-09-01 Addressing PCM elevated temp data retention
Find out why word games should not detract from an impressive piece of detailed analytical work on the composition changes or segregation in dome and edge type phase change memory cells.
2015-05-05 MLC PCM leapfrogs resistance drift, temperature hurdles
Researchers at IBM have found a way to tackle the phenomenon of resistance drift and the impact of temperature, which has been a barrier to multilevel-cell phase-change memory
2009-06-18 FRAM provides up to 45 years data retention
Ramtron International Corp. has released the FM24CL32 serial non-volatile RAM that offers high-speed read/write performance, low voltage operation and superior data retention
2011-02-03 PCM progress report no. 1: Temperatures rise and constituents on the move
Here's a look at the overall picture of phase change memory progress.
2012-11-20 Impact of crystal electrodes on PCM (Part 1)
Part 1 tackles the seeded-bridge model that allows the novel use of elevated-temperature data-retention results to explore the set parameters of PCM devices.
2014-12-19 IBM claims PCM non-volatility not necessary
Ron Neale gets down to the nitty-gritty of IBM's invited paper at IEDM 2014. IBM has stated that for PCM, non-volatility/data-retention is no longer needed
2013-12-11 Recognizing the issues with phase change memory
There are about half a dozen papers on phase change memory (PCM) devices at IEDM 2013, and most deal with known reliability problems associated with PCM.
2015-12-24 Recent revelations on non-volatile memory conduction
There is a continuing work at IBM Zurich that has just provided us with new and important insights into non-volatile memory, as well as an intriguing mystery. Read this to learn more.
2012-05-28 PCM progress report no. 7: A look at Samsung's 8-Gb array
Here's a discussion on the features of Samsung's 8-Gb array.
2012-03-15 PCM progress report no. 6: Recent advances in phase change memory (Part 2)
The second installment of this two-part series tackles other recent developments in PCM, including fabrication of a 1 Gb PCM array with a 4F2 cell size.
2012-03-01 PCM progress report no. 6: Recent advances in phase change memory (Part 1)
This series looks at some of the most recent phase change memory developments. Part 1 reviews structural and materials advances, focusing on both benefits and challenges.
2012-02-23 PCM progress report no. 5: Scaling issues
Learn about the possible approaches to achieve the scaling necessary to make PCM a commercial success.
2014-06-30 NV memory: Significance of filament size and shape
Many presenters in VLSI 2014 are seeking to improve performance and increase the understanding of ReRAM/RRAM operation. However, there is still no clear winner when it comes to material or memory type.
2015-09-01 Mystery in memory: Why 3D XPoint is not PCM
By keeping secret the technology behind 3D XPoint memory, Micron and Intel gave the engineering community a challenge by using phrases such as "new recipe," "bulk switching," "fundamental and new."
2012-12-18 Impact of crystal electrodes on PCM (Part 2)
Here's a review of the published ETDR results to see whether the seeded-bridge model holds true.
2013-05-28 Annular electrodes as PCM solution (Part 2)
Learn about the possible advantages and limitations offered by nanotechnology and self-assembly techniques.
2014-03-06 A detailed look at Micron-Sony's 16Gb ReRAM
The ReRAM used CuTe as the active memory material where in a CbRAM cell the growth and removal of a Cu filament link through an adjacent thin insulator to a lower electrode yields two NV logic states.
2012-02-09 PCM progress report no. 3: New direction with polyamorphic states
Here's a review of Semyon D. Savransky's paper to evaluate a type of nonvolatile memory based on polyamorphous chalcogenide transformations.
2006-10-16 Customers raise new concerns in digital power
Digital power management involves different customers: design engineers, project leaders, purchasing group, QA personnel, test engineers, manufacturing/CM/OEM and customer service staff.
2011-10-13 Benefits of SONOS memory for embedded flash
Here's a discussion on why silicon-oxide-nitride-oxide-silicon memory technology is ideally suited for eFlash.
2014-05-14 Assessing correlated electron memory claims by 4DS
4DS Inc. now claims that the operation of its memory is based on strongly correlated electron-effect Mott-like transition.
2014-04-10 Advances in power converter packaging
Find out how packaging advances are matching semiconductor progress in power converter miniaturisation.
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