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2013-02-22 ST's FDSOI process churns out 3GHz processor engines
The 28nm version of STMicroelectronics' process has produced application processor "engines" that are capable of operating at clock frequencies in excess of 3GHz.
2012-12-13 ST ready to roll out 28nm FDSOI
ST boasted that the FDSOI planar process holds advantages over other manufacturing process variants in terms of trade-offs between performance, power consumption and manufacturability.
2013-01-23 ST closes in on FDSOI deal with Globalfoundries
ST claims that at 28 nm, its FDSOI process can provide 30 per cent more performance than bulk 28nm CMOS at the same power consumption.
2013-05-20 ST bags design wins for 28nm FDSOI
ST has claimed three design wins for its FDSOI manufacturing process, a move that could draw out support from EDA software and IP providers.
2012-12-14 FDSOI workshop reveals next nodes at 14nm, 10nm
Parties interested in the FDSOI roadmap are renaming what was the 20nm node so they can be seen to be at an equivalent node to Intel 14nm FinFET process.
2012-12-18 FDSOI beneficial for FPGAs, says Altera
Altera's approval of FDSOI process for manufacturing FPGAs hints at possible implementation of multiple-foundry manufacturing strategy.
2013-02-07 ARM thumbs up for ST's FDSOI process
ARM rates FDSOI process as 'good technology' and announces the addition of two licensees utilising its big-little approach to multi-processing during a conference with financial analysts.
2013-05-29 Analysis: More to join ST in FDSOI ecosystem
STMicroelectronics will soon find company in what's currently seen as an empty FDSOI ecosystem as momentum slowly but surely builds up on a global scale.
2016-04-11 SuVolta: The demise of the promising start-up
SuVolta said it was going after opportunities in mobile processors, DRAM and IoT but was probably not helped by the fact that the Japanese semiconductor industry was experiencing its own turmoil.
2013-03-20 ST takes 2G and 3G, Ericsson gets LTE modem
CEO Carlo Bozotti promised support for existing products and customers of ST-Ericsson but has revealed STMicroelectronics is wary of an increasingly vertically-integrated mobile devices market.
2013-06-20 Rambus settles with ST, signs IP deal
Agreement covers FDSOI design, security, memory and interface technologies and settles all outstanding claims.
2013-02-08 IBM: EUV lithography not ready until 7nm node
IBM warns that EUV lithography will not be ready until the 7nm node but Globalfoundries and Samsung say they are on track to offer 14nm FinFET manufacturing by 2014.
2015-10-14 GloFo exec finds new 'sparkplug' in More-than-Moore
Rutger Wijburg, SVP and GM of Globalfoundries, said the era of the PC as a driver for the semiconductor industry is over, passing to role to smartphones, and now, the IoT.
2012-12-17 Globalfoundries CEO: Time for foundry 2.0
Globalfoundries' CEO accosted critics who claim that the fabless era is done and insisted that the foundry model is still experiencing huge growth rates.
2015-08-05 CoolCube 3D interconnect targets FinFET process
The research institute demonstrated the feasibility of CoolCube used to stack FinFET layers on its 300mm production line as well as with fully-depleted silicon-on-insulator manufacturing processes.
2013-03-25 CEO: SMIC all about utilisation, differentiation
China-based foundry SMIC hopes to do away with its image of a company paralysed by internal management turmoil and constant legal battles with rival TSMC.
2015-01-09 CEA-Leti describes true 3D monolithic integration
According to the research institute, the CoolCube technology no longer relies on tall through silicon vias (TSVs) and coarse redistribution layers typically used for wafer-on-wafer die stacking.
2013-09-06 Suvolta enlists Fujitsu for image processor IC production
SuVolta's MB86S22AA Milbeaut image processor IC includes an ARM Cortex-A5MP and is capable of performing lens distortion and lens resolution correction at a rate of 12 fps across 24 megapixels.
2012-12-17 Panel: No single approach in future of ICs
A group of experts at IEDM debated about the various technologies in semiconductor miniaturisation, with FinFETs being just one of many approaches.
2014-08-06 MEMS treads logic road
The difference between MEMS and logic, and the reason for the continued control of the IDM in the MEMS domain, is that MEMS manufacturing process is fundamentally linked to design possibilities.
2015-09-04 Is China targeting GlobalFoundries next?
China, the second-biggest economy in the world, is flexing its financial muscles in a bid to acquire as many semiconductor companies in recent months to improve its global standing in the industry.
2012-09-26 Intel, STM and IBM to showcase IC manufacturing advancements
Intel and a joint research by IBM and STMicroelectronics will each present progress reports at the International Electron Devices Meeting.
2012-12-04 Globalfoundries ready to roll out FinFET wafers
The chip making giant's first multi-project wafer runs, which are aimed at customers testing their 14nm FinFET manufacturing process technology, could start as soon as the first quarter of 2013
2012-12-20 Globalfoundries consider SSRW tech as 3rd option
The chip foundry is evaluating a third manufacturing option to follow conventional bulk planar CMOS based on a super-steep retrograde well approach.
2015-09-18 Globalfoundries CEO talks about FD-SOI, FinFET and IoT
Sanjay Jha said many applications are expected to drive the industry's growth, which include mass market smartphones, M2M, IoT and automotive, which don't need the cost and complexity of FinFET.
2005-06-29 Freescale joins Europe's 45nm gate stack project
Freescale Semiconductor has joined Europe's ambitious NanoCMOS project, which is researching the 45nm CMOS logic manufacturing process node.
2015-07-09 Dissecting FD-SOI: Understanding the risks and opportunities
According to the CEO of CEA-Leti, FD-SOI's genuine advantage wasn't obvious at process nodes such as 40nm or 32nm, but there is a certain degree of potential now at 28nm node.
2015-02-09 Dark Silicon: Looking to monolithic 3D for ray of light
According to an ARM executive, dark silicon is projected to account for "about one-third of total area in the 20nm technology node, increasing to as much as 80 per cent by the 5nm node."
2011-12-20 Consortium pushes FD-SOI tech
FD-SOI's ability to accommodate planar architectures presents much lower manufacturing risk than FinFET.
2007-07-12 Consortium claims 32/22nm SRAM breakthrough
The PULLNANO consortium disclosed a breakthrough in 32nm and 22nm CMOS technology platforms, including the realization of a functional CMOS SRAM demonstrator using 32nm design rules.
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