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What does FET stand for?
Field Effect Transistor (FET) is a kind of transistor which relies on an electric field to control the shape and the conductivity of a channel in a semiconductor material.
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2007-02-06 Tundra transfers RapidIO interoperability testing facility to FET
Fabric Embedded Tools Corp. has acquired the business and operations of Tundra Semiconductor Corp.'s RIOLAB, the world's 'first' RapidIO interoperability testing facility.
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2002-05-22 Toshiba ships extended C-band GaAs FET
Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range.
2002-06-20 Toshiba Ku-band FET produces 18W
The TIM1414-18L GaAs FET from Toshiba Corp. produces an output power of 18W in the 14GHz to 14.5GHz range, and is targeted for use in solid-state power amplifiers for Ku-band satellite transmitters and VSATs.
2003-07-04 TAEC GaAs FET targets satcom systems
Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs.
2003-07-01 Supertex IC integrates Power FET, thermal sensor
The HV111 from Supertex is a fully integrated, high voltage Inrush Limiter/Circuit Breaker/Hotswap IC for externally powered network equipment.
2001-06-04 Suggested circuit controller for a dual-control FET VVA in AGC temperature compensation
This application note describes a useful broadband technique of temperature compensation for GaAs FET amplifiers.
2008-06-19 Step-up DC/DC converters feature FET
Maxim Integrated Products introduces the MAX17062/MAX17067 single-channel, step-up DC/DC converters with an integrated FET.
2009-05-11 ST taps FET's lithium battery tech
STMicroelectronics has signed a commercial agreement with Front-Edge Technology (FET), enabling ST to bring FET's NanoEnergy ultrathin lithium battery technology to a wide range of new markets and applications.
2004-12-20 Power FET 'revolutionizes switching devices'
Matsushita Electric claims its new transistor revolutionizes switching devices.
2001-09-21 Packaged FET equivalent circuit model
This application note illustrates an approximate circuit model for use with packaged FETs.
1999-12-14 Noise analysis of FET transimpedance amplifiers
The availability of detailed noise spectral density characteristics for the OPA111 amplifier allows an accurate noise error analysis in a variety of different circuit configurations. The fact that the spectral characteristics are guaranteed maximums that allow absolute noise errors to be truly bounded. Other FET amplifiers normally use simpler specifications of rms noise in a given bandwidth (typically 10Hz to 10kHz) and peak-to-peak noise (typically specified in the band 0.1Hz to 10Hz). These specifications do not contain enough information to allow accurate analysis of noise behavior in any but the simplest of circuit configurations. This application note discusses in detail how the OPA111 is utilized to perform noise error analysis in different circuit configurations.
2003-06-27 Mitsubishi GaAs FET targets 14GHz apps
The Semiconductor Division of Mitsubishi Electric & Electronics Inc. has introduced two GaAs HFET products.
2007-09-26 Minimizing FET losses for a high input rail buck converter
At lower input voltages it is often possible to use the same HS and LS FETs, yet for higher input voltages the selection criteria for these FETs are different.
2006-09-14 Microsemi improves power FET specs with new process
Microsemi's new family of high-power MOSFETs and FREDFETs is manufactured using its MOS 8 process that improves device characteristics and lowers costs.
2004-06-17 LM2743 N-channel FET synchronous buck regulator controller for conversion from 3.3V
This app note presents the LM2743 N-channel FET synchronous buck regulator controller for conversion from 3.3V.
2011-05-03 ITRS chairman: Tunnel FET possible transistor option
ITRS chairman, Paolo Gargini, believes that a field effect transistor (FET) combined with quantum tunneling can reduce power consumption, while maintaining adequate performance.
2007-07-05 Intersil integrated FET DC/DC converters
The purpose of this application note is to show how the Intersil integrated FET DC/DC converters can make the task of designing an embedded step-down DC/DC converter much easier.
2008-05-05 Innovative FET design works with radar, avionics apps
The HVVFET from HVVi Semiconductors is a family of silicon power transistors targeted at L-band avionics and pulsed-radar applications such as IFF, TCAS, TACAN, Mode-S and ground-based radar systems.
2006-12-14 Infineon unveils 'first' 65nm multigate FET IC
Researchers at Infineon have tested a complex circuit fabricated using a 65nm multigate transistor architecture, touted to be the world's first.
2013-03-05 Gate drivers target IGBT, SiC FET designs
TI's UCC27531 and UCC27532 output stage gate drivers claim to offer efficient output drive capability, short propagation delay and increased system protection for isolated power designs.
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today.
2011-06-29 GaN FET geared for 1GHz CATV
Renesas Electronics launched the MC-7802, a power amplifier module with gallium nitride field effect transistors (GaN FETs) designed for 1GHz CATV.
2010-06-11 GaAs FET power amps rated for 18W, 30W
Toshiba America Electronic Components Inc. (TAEC) has expanded its Ku-Band GaAs FET lineup with two higher output power devices rated for 18- and 30W.
2007-12-19 GaAs FET amplifier handles 1.5GHz
Stealth Microwave has introduced Model SM0520-36/36H, a 500-2,000MHz solid state GaAs FET amplifier designed for multipurpose use in multiple wireless and military markets.
2008-09-09 GaAs FET amplifier gears up for military, wireless apps
Stealth Microwave has designed Model SM06927-36H, a 690-2,700MHz solid-state GaAs FET amplifier designed for multipurpose use in multiple wireless and military markets.
2007-11-26 GaAs FET amp targets European WiMAX transceiver stations
Mitsubishi Electric Corp. has developed an internally impedance matched high output power GaAs FET for 3.6GHz band WiMAX base transceiver stations in Europe.
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2007-09-11 FET regulators offer 95 percent efficiency in full, light load setups
Intersil Corp. has released a buck integrated FET regulator that can switch between forced PWM and automatic PWM/PFM modes, enabling it to maintain up to 95 percent efficiency in both full load and light load conditions.
2007-08-02 FET regulators handle transient spikes up to 100V
Intersil's new high-efficiency, 2A integrated FET step down DC/DC switching regulators support wide operating input voltages and can handle transient spikes up to 100V.
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