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FeRAM What does FRAM stand for? Search results

What does FRAM stand for?
Ferroelectronic RAM (FRAM) is a non-volatile memory that retains its content without power.
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2002-07-24 Tegal develops plasma etch process for FeRAM materials
Tegal Corp. has developed plasma etch processes for ferroelectric RAM (FeRAM) materials by implementing patented technologies for the closed-loop control and monitoring of wafer temperatures during etching.
2003-02-24 Symetrix, Oki to collaborate for non-destructive read out FeRAM
Symetrix Corp. has licensed its Non-Destructive Read Out FRAM technology to Oki Electric Industry Co. Ltd, who will also serve as foundry for the NDRO FeRAM using its 0.255m process.
2003-07-10 Matsushita FeRAM employs 0.18?m process
Matsushita Electric Industrial Co. Ltd has developed what it claims to be the world's first FeRAM-embedded SoC that uses 0.18?m technology.
2003-03-11 Hynix commercializes FeRAM for mobile apps
Hynix Semiconductor has announced that it is sampling 4Mb and 8Mb Ferroelectric RAMs for use in next-gen mobile and SoC systems.
2006-08-04 Fujitsu, Tokyo university co-develop new FeRAM material
Tokyo Institute of Technology, Fujitsu Laboratories and Fujitsu have jointly developed a new material for a new generation of non-volatile FeRAM.
2003-09-09 Epson touts new FeRAM material as nearly fatigue-free
Seiko Epson Corp. has developed a new ferroelectric material for ferroelectric random-access memory.
2006-11-13 Epson makes FeRAM based on new material
Seiko Epson has developed ferroelectric RAM technology based on a new material called PZTN.
2003-02-12 Tegal receives two patents for new etch methods
Tegal Corp. has obtained U.S. Patents Nos. 6,492,280 and 6,500,314 for producing sub-0.155m devices via a unique apparatus and solid source method.
2013-02-26 MRAM, PCM to lead $2B NVM market
The global emerging non-volatile memory market will grow from a value of $209 million in 2012 to $2 billion in 2018, with MRAM and PCM taking the lead.
2002-07-09 Changing market needs open doors for emerging memories
An analysis from In-Stat/MDR indicates that new memory technologies are emerging as a result of changing market needs.
2006-12-15 16Kbit FRAM meets stringent automotive benchmarks
Ramtron's 16Kbit, 5V, SPI FRAM memory device has been qualified to AEC-Q100 standards.
2014-08-01 Testing resistive memory devices
In this instalment, we will address issues related to characterisation and forming, as well as endurance testing for 1R ReRAM structures.
2010-06-11 STT-RAM geared to displace DRAM, flash
Grandis Inc. has updated its STT-RAM roadmap with some ambitious efforts in mind: It hopes to replace DRAM, and eventually, NAND, with its next-generation MRAM.
2007-02-01 Next-gen memory market up for grabs
The frantic search for a next-generation memory technology took center stage at the IEEE International Electron Devices Meeting in December, amid growing concerns that DRAM and flash parts will no longer scale in the near future.
2010-08-11 Naysayers, optimists clash on DRAM forecasts
Industry players and watchers have conflicting outlooks when it comes to forecasting DRAM supply and demand.
2014-04-23 MRAM plots a 50 per cent CAGR increase
In addition to its non-volatile appeal, the growth is seen to be driven by power savings from storing data using magnetic element, yielding $246.3 million by 2019.
2004-10-04 Matsushita memory card with contactless smart card capabilities
Matsushita Electric developed what it claims as the industry's first SD Memory Card with contactless smart card capabilities.
2001-06-16 Infineon, IBM prep 256Mb magnetic RAM
The two companies are expected to build the first products in a 0.13?m process at their Altis Semiconductor joint venture in Corbeil-Essonnes, France.
2010-12-09 ICs seen to scale via 3D TSV
Chip scaling is becoming harder and costlier entering into the sub-20nm realm, thus, the industry is looking for new materials, structures and processes, says a technologist from Samsung.
2010-09-02 HP, Hynix push memristor commercialization
HP and Hynix have forged a joint development agreement to develop materials and process integration technology to shift memristors from R&D to commercial resistive RAM (ReRAM).
2009-08-18 Ferroelectric memories exceed DRAM, flash
Yale and SRC researchers recently demonstrated an experimental ferroelectric transistor for FeDRAMs that retained information 1,000x longer than DRAMs, consumed 20x less power and can be scaled to even the most advanced nodes.
2010-12-14 Chipmakers keep secrets at IEDM
Few papers provided clues on vendors' plans at the 2010 International Electron Device Meeting (IEDM). In place of clear presentations on plans for 22-/20nm plans, rumors abounded, with many believing the leading-edge foundries will extend bulk CMOS.
2014-10-20 Carbon nanotubes find their way into storage devices
Carbon nanotube technology presents potential applications to a wide spectrum of uses, with memory and storage among them. However, their future, though promising, is relatively open ended at this time.
2005-06-13 Cadence Virtuoso NeoCircuit completes Oki IP analog designs
Cadence Design Systems Inc. and Oki Electric Co. Ltd have disclosed that Oki achieved five times faster design turn-around-time for its analog blocks than with its previous design methodology and has completed 30 reusable analog IP designs using Cadence Virtuoso NeoCircuit technology.
2013-02-27 A primer on FRAM (Part 1)
Know the history and basic operating principles of ferroelectric RAM.
2011-01-18 4Mb MRAM SPI solution debuts
Everspin adds 4Mb solution to MRAM family offering faster write speeds and improved reliability
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