Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > Ferroelectric random access memory

Ferroelectric random access memory Search results

total search39 articles
2012-02-08 Nonvolatile memory claims lowest energy consumption
The FM25P16 uses 1/1,000th the energy of EEPROM devices, while delivering fast read/write performance and virtually unlimited endurance.
2015-07-29 How PC slump affects memory chipmakers
Semiconductor sales are in a two-year slump due to weak demand for PCs and smartphones, according to Gartner. The research firm said chip growth will return to 4-5 per cent from 2017-2019.
2012-07-31 FRAM: Alternative to flash memory in embedded designs
Here are some real world examples of where ferroelectric random access memory should be considered as an alternative to flash as a viable nonvolatile memory technology.
2011-07-21 TCNL fabs ferroelectric nanostructures on plastic
Georgia Tech researchers have developed a way to fabricate nanometer-scale ferroelectric structures directly on substrates
2008-05-16 What's the best flash memory flavor for your design
The embedded systems industry has been waiting for "universal memory" to come along. This article discusses the various flavors of NAND and NOR flash memory that may be the suitable to your design needs
2009-06-03 Green memory: key to driving down data center power
In servers, the notoriously voracious microprocessor is passing the power-hog mantle to the DRAM. Thus the greening of the data center includes a focus on lower-voltage DRAMs, non-volatile alternatives and the emerging category of storage-class memories.
2015-07-21 Utilising FRAMs in automotive applications
FRAMs can be used for nonvolatile data logging in most automotive sub systems. This technical article discusses the use of FRAM in Automotive Event Data Recorders.
2004-11-23 TI, Ramtron tip 4Mb embedded FRAM technology
During the Non-Volatile Memory Technology Symposium 2004 (NVMTS2004) last week, Texas Instruments Inc. and Ramtron International Corp. presented more details of their efforts in the ferroelectric random access memory (FRAM) market.
2011-07-21 SPI FRAMs provide 10 billion write/read cycles
Fujitsu Semiconductor's SPI FRAM family operates at a voltage range between 3C3.6V and provides an endurance of 10 billion write/read cycles.
2005-08-30 Ramtron rolls FRAM with serial interface
Ramtron International has rolled out the FM25256, a 256Kb nonvolatile ferroelectric random access memory (FRAM) product with a serial peripheral interface.
2012-09-12 Ramtron once again rejects Cypress' takeover bid
The company's board previously rejected at least three offers by Cypress, with the last offer being increased from $86 million to $100 million.
2012-05-14 Next gen wireless apps with FRAM-based MCUs
Discover the unique features FRAM offers as a memory alternative for embedded wireless applications
2003-07-10 Matsushita FeRAM employs 0.18?m process
Matsushita Electric Industrial Co. Ltd has developed what it claims to be the world's first FeRAM-embedded SoC that uses 0.18?m technology.
2006-08-04 Fujitsu, Tokyo university co-develop new FeRAM material
Tokyo Institute of Technology, Fujitsu Laboratories and Fujitsu have jointly developed a new material for a new generation of non-volatile FeRAM.
2004-11-19 Fujitsu rolls out 'highest-ever capacity FRAM'
Fujitsu Microelectronics America introduced its 1Mb FRAM, which is claimed by the company to be the highest-ever capacity FRAM ever developed.
2005-07-11 Epson, Fujitsu create next-gen FRAM technology
Seiko Epson Corp. (Epson) and Fujitsu Ltd have jointly developed next-generation technology for ferroelectric random access memory (FRAM) non-volatile memory.
2003-09-09 Epson touts new FeRAM material as nearly fatigue-free
Seiko Epson Corp. has developed a new ferroelectric material for ferroelectric random-access memory.
2012-06-22 Cypress keen on buying Ramtron
Ramtron said that its board of directors reviewed and rejected the Cypress proposal, but that the company would review its strategic options, including discussions with Cypress.
2013-01-03 Cypress incorporates Ramtron FRAM devices
Ramtron's ferroelectric random access memory (FRAM) products claim to offer the market's widest range of densities for fast-write non-volatile memories.
2013-03-04 A primer on FRAM (Part 2)
Understand charge thresholds, bit line capacitance ratios, and why retention is a bigger problem than fatigue.
2013-02-27 A primer on FRAM (Part 1)
Know the history and basic operating principles of ferroelectric RAM
2005-04-04 1Mb FRAM replacement for SRAM
Ramtron finally offered a non-volatile FRAM that is designed to be a drop-in replacement for standard asynchronous SRAMs.
2010-06-11 STT-RAM geared to displace DRAM, flash
Grandis Inc. has updated its STT-RAM roadmap with some ambitious efforts in mind: It hopes to replace DRAM, and eventually, NAND, with its next-generation MRAM.
2002-10-25 Samsung ships 4Mb FRAM for mobile apps
Samsung Electronics Co. Ltd has announced the availability of a 4Mb FRAM that combines nonvolatile memory technology with the performance of SRAMs and DRAMs
2002-02-05 Ramtron FRAM offers 20MHz R/W speed
Claimed to be able to read and write continuously at 20MHz, the FM25CL64 SPI FRAM can outperform similar EEPROMS that require 10MHz and 10ms delays to read and write.
2002-04-01 Ramtron FRAM boasts 10 billion write cycles
The FM30C256 FRAM is claimed to read and write continuously at bus speeds of up to 1MHz at 10 billion-cycle endurancefaster than the 1 million write cycle of similar EEPROM devices.
2002-08-15 MEN PC-MIP mezzanine card delivers FRAM
MEN Micro Inc.'s mezzanine card for the new PCI-based PC-MIP mezzanine standard can provide up to 512KB of NVFRAM without needing a battery.
2003-03-11 Hynix commercializes FeRAM for mobile apps
Hynix Semiconductor has announced that it is sampling 4Mb and 8Mb Ferroelectric RAMs for use in next-gen mobile and SoC systems
2012-10-17 Exploring split-gate thin-film storage
Based on nanocrystals, SG-TFS is touted to provide fast, efficient read/write operation in a reliable, economical and scalable technology.
2013-01-10 Everspin exhibits ST-MRAM viability for SSD
The reduced switching current and simplified circuitry of ST-MRAM enables it to support the write bandwidth required for DDR3 performance, according to Everspin Technologies.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

Back to Top