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total search7 articles
2007-11-01 HEMT transistor handles Ku band
Mitsubishi Electric has introduced a GaAs HEMT (High Electron Mobility Transistor) MGF4941AL that is mainly intended for use in the Ku band.
2008-05-27 Mitsubishi offers Ku band low-noise GaAs HEMT
Mitsubishi Electric Corp. has developed a full-mold package low noise Ku1 band GaAs high electron mobility transistor (HEMT), the MGF4935AM that is highly suitable for low-noise amplifiers in Direct Broadcast Satellite (DBS) reception systems and Very Small Aperture Terminal (VSAT) systems.
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2006-08-08 Mitsubishi announces sale of GaAs HEMT in Ka band
Mitsubishi Electric announced the development of a high gain version of a micro-X package HEMT, suitable for low noise amplifiers in 18-20GHz-band satellite broadcasting reception systems
2007-03-27 GaN HEMTs boost WiMAX power amplification
Cree is shipping sample quantities of three GaN HEMTs that are capable of boosting WiMAX power amplification efficiency by up to 50 percent.
2010-10-07 Fujitsu sets record for power amplifiers in millimeter-wave W-band
Fujitsu uses gallium nitride high electron mobility transistors in power amplifier to achieve 1.3W in output
2004-07-01 CMOS RF SoC design shoots for 60GHz
The article describes a potential design of an RF SoC that is backward-compatible with a 60GHz WLAN systems.
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