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total search19 articles
2004-12-20 Power FET 'revolutionizes switching devices
Matsushita Electric claims its new transistor revolutionizes switching devices.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs
2015-04-17 How to characterize GaN power devices
Here is a comparison of the degradation mechanisms of gallium-nitride FETs with silicon FETs. We will also discuss the need for waveform monitoring.
2011-06-29 GaN FET geared for 1GHz CATV
Renesas Electronics launched the MC-7802, a power amplifier module with gallium nitride field effect transistors (GaN FETs) designed for 1GHz CATV
2002-06-17 EMCORE to develop GaN-based electronic devices for DARPA
EMCORE Corp. has signed a $4 million contract with the Defense Advanced Research Projects Agency to develop wide bandgap semiconductor-base high power, high-frequency electronics for military applications.
2011-06-23 100V gate driver for enhancement-mode GaN FETs
National Semiconductor launches the LM5113, a highly-integrated, high-side and low-side GaN FET driver that reduces component count and PCB area.
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2015-12-14 Get 500W in converter with GaN (Part 2
In Part 2, we tackle the key details of physical and electrical design, including layout, key waveforms and losses. We also summarise key potential improvements.
2015-12-07 Get 500W in converter with GaN (Part 1
Part 1 covers brick technology, a comparison of eGaN FETs to silicon MOSFETS, a basic overview of the GaN-based eighth-brick design, and experimental results
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today.
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2015-07-16 EPC eGaN half bridge power ICs with integrated bootstrap FET
Geared for resonant wireless power transfer applications, the EPC2107 and EPC2108 promise to eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp.
2011-08-19 Development board features 200V eGaN FET
The EPC9004 is a 200V maximum input voltage board that can be used in solar microinverters and class D audio amplifiers.
2012-03-20 Utilize LM5113 evaluation board
Here's an application note that presents the schematic of the evaluation board, bill of materials and a quick setup procedure.
2012-02-13 Gate driver features 7.6A peak turn-off current
The LM5114 drives GaN FETs and MOSFETs in low-side applications and operates from a single power supply range of 4-12.6V
2014-12-11 Half-bridge transistor touts 87 per cent system efficiency
The EPC2101 offers improved switching speed and thermal performance, as well as increased power density. It also aims to save space and lower system costs.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices
2012-05-22 Utilizing LM5114 evaluation board
Here's a look at an evaluation board designed to provide the design engineer with a fully functional boost dc-dc converter to evaluate the LM5114.
2015-09-16 120V, 20A eGaN IC optimised for wireless power transfer
The EPC2110 promises high performance as a result of its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a 1.35mm x 1.35mm package.
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