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2012-04-30 TI intros gate drivers for powers devices
The UCC27511 and UCC27517 drivers claim to improve efficiency, reliability and power-density in applications such as off-line isolated power supplies, telecom modules, air conditioner systems, UPS and portable power tools.
2002-10-24 TDI to sample breakthrough p-type GaN substrates
Technologies and Devices Int. Inc. has announced a breakthrough in GaN compound semiconductor material growth technology, by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.
2013-05-09 SiC power devices success rests on EV/HEV adoption
Yole Dveloppement points out that wide-bandgap transistor and diode growth potential is obscured by automotive qualification though PV inverter growth remains positive.
2007-06-13 RFMD tips high-power 48V GaN transistors
RFMD has introduced a new family of 48V GaN power transistors that offers power performance from 10W to 120W and very wide tunable bandwidth
2012-05-29 NXP, A*STAR develop next-gen GaN-ON-Si power devices
The IME and NXP team will collaborate on the development of process technologies for the manufacturing of GaN devices on 200mm wafer.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs
2005-10-31 Nakamura team claims advance in GaN device performance
A team led by Shuji Nakamura, inventor of blue LEDs and lasers based on gallium nitride, have developed a new GaN growth technology that enables production of new films with improved or new performance characteristics
2010-11-04 LAST POWER Project aims to develop advanced SiC and GaN semicon
The partners in a new publicly-funded European research project have just announced details of the multinational/multidisciplinary program called LAST POWER (Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications
2015-07-24 Impact of GaN technology on EMI
The value of GaN power switches is clear, in that efficiencies are vastly better than MOSFET devices. However, much more study needs to be done in EMI consequences.
2008-06-05 IMEC, Aixtron tout advance to low-cost GaN power apps
IMEC and Aixtron AG researchers have grown uniform AlGaN/GaN heterostructures on 200mm silicon wafers. The achievement is claimed to be a major advance towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.
2010-07-20 IMEC's GaN-on-Si team gains new members
Micron Technology, Applied Materials, and Ultratech have joined IMEC's industrial affiliation program on gallium nitride-on-silicon (GaN-on-Si) technology
2011-05-30 IMEC develops GaN-on-silicon wafers for power devices
IMEC International has successfully produced device quality wafers with GaN/AlGaN layers on 200mm silicon wafers
2015-04-17 How to characterize GaN power devices
Here is a comparison of the degradation mechanisms of gallium-nitride FETs with silicon FETs. We will also discuss the need for waveform monitoring.
2014-03-21 GaN-on-Si mass adoption for LED apps remains unclear
Between the power and LED markets, GaN-on-Si will dominate the former, with GaN devices making up more than seven per cent overall power devices market share by 2020, according to Yole.
2008-06-20 GaN transistors roll from TriQuint Semiconductor
TriQuint Semiconductor has released the first of its gallium nitride power transistors for a wide range of high frequency applications including mobile base station, defense and space communications systems.
2011-01-28 GaN purification process could boost LED, transistor output
The new purification process introduces voids into the GaN film near its interface with a sapphire substrate, causing thousands of defects to be sucked into the voids, thus boosting GaN devices' output.
2011-03-31 GaN power transistors eliminate current collapse, cut power loss
Powdec K.K. and Sheffield University report that they have developed high voltage Gallium Nitride (GaN) power transistors that are hetero-junction structures based on novel principles
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today
2012-01-13 GaN market gains from demand for commercial apps
The GaN device market will grow at a CAGR of nearly 29 percent, to reach $178 million in 2015
2013-09-23 GaN devices to boost RF power market
ABI Research revealed that point-to-point communications, SATCOM, radars of all types and industrial/medical applications will all benefit by the introduction of high-power GaN devices.
2015-07-30 Diamond substrate unleashes GaN potential
Diamond substrates and heat spreaders enable GaN devices to operate near its peak power output without degradation in lifetime.
2014-10-14 Creating more cost-effective GaN LEDs for homes
Plessey Semiconductors aims to be the first company to make energy-efficient LEDs for home lighting at a price that consumers will pay, and is using a technology made by Cambridge researchers.
2015-02-02 CMOS finds its match: GaN ignites shift in power
The CEO of EPC said that its low-cost gallium nitride chips will enable a range of applications from wireless charging to autonomous vehicles and more efficient cellular communications.
2014-06-23 ZuGaNG project adopts GaN for voltage converters
The GaN-based high voltage converters reduce the switching losses of power converters due to their high pulse frequency and which work reliably under high pressure and temperature
2013-01-18 TriQuint outs 35W, 32V GaN RF power transistors
The T1G4003532-FL and T1G4003532-FS are 37W discrete GaN on SiC HEMTs that operate from DC to 3.5GHz, geared to optimise power and efficiency, and to lower overall system cost
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems
2013-12-02 Transphorm, Fujitsu to merge GaN power device biz
Fujitsu will establish a new company in Japan for the GaN power device business, where it will transfer its combined design and development assets as well as IP rights in GaN power devices.
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications
2013-06-07 TAEC debuts 200W GaN HEMT
The 200W TGI5254-200P operates in the 5.2GHz to 5.4GHz range AND enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.
2014-06-26 Sputtering method reduces GaN LED prod'n cost
University of Tokyo researchers developed a technology for creating GaN LEDs on glass substrate that could not only reduce manufacturing costs but also help to develop OLED light panels
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