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2014-12-11 Half-bridge transistor touts 87 per cent system efficiency
The EPC2101 offers improved switching speed and thermal performance, as well as increased power density. It also aims to save space and lower system costs.
2007-12-21 GaN transistor touts ultrahigh breakdown voltage
A GaN power transistor with ultrahigh breakdown voltage and low on-state resistance has been announced by Panasonic for high-voltage and low-loss power switching applications.
2006-08-23 GaN transistor amp delivers 400W for 3G base stations
NEC Corp. has announced the development of a compact GaN power transistor amplifier, said to have the world's highest output power level of 400W while featuring low-distortion characteristics, targeted at 3G base stations.
2006-07-12 GaN RF power transistor delivers 400W
Cree announced its new high-power gallium nitride RF power transistor for mobile WiMAX applications produces a record 400W of peak pulsed RF power at 3.3GHz
2009-12-14 GaN inverter cuts conversion loss in motor drives
Panasonic Corp. has developed a Gallium Nitride (GaN)-based monolithic inverter IC featuring six GaN-based transistors that may be driven independently
2009-06-08 Cree inks transistor supply deal with Korea firm
Cree Inc. has signed a definitive agreement with RFHIC Corp. to supply GaN-on-SiC transistors to the South Korean company's GaN HEMT amplifier product families
2001-10-09 AlGaN/GaN transistor application notes: Surface morphology
This application note describes the typical surface morphology of RF Nitro's AlGaN/GaN transistor structures grown on SiC or sapphire.
2001-10-09 AlGaN/GaN transistor application notes: Summary of physical parameters
This application note shows a tabular summary of the physical parameters of AlGaN/GaN semiconductor crystals
2001-10-09 AlGaN/GaN transistor application notes: Substrate selection
This application note describes the available substrate materials that can be used for GaN epitaxial growth. Features and characteristics of substrate types are given importance to guide users for right material selection
2001-10-08 AlGaN/GaN transistor application notes: Insulating GaN buffer layers
This application note explains RF Nitro's technique in insulating GaN films that is required for high-performance transistor applications.
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2013-06-07 TAEC debuts 200W GaN HEMT
The 200W TGI5254-200P operates in the 5.2GHz to 5.4GHz range AND enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.
2010-11-05 RFMD pushing GaN-based, ZigBee products
RFMD announced that it will showcase its remarkable high-performance RF components at electronica 2010, in Munich from November 9 to November 12, 2010.
2007-05-22 RF transistor suits WiMAX applications
Nitronex Corp. has developed a 28V, 100W GaN high electron mobility transistor (HEMT) for WiMAX applications.
2012-09-04 RF transistor aimed at secondary surveillance radar aviation apps
Microsemi's 1011GN-700ELM is based on GaN on SiC technologies, and operates at 1030MHz and supports short- and long-pulsed extended length message
2013-06-11 Research combines LED, power transistor in GaN chip
Engineers at Rensselaer Polytechnic Institute said the innovation could open the door to a new generation of LED technology that is less expensive to manufacture and significantly more efficient.
2012-06-25 Power transistor ideal for radar architectures
RFMD' RFHA1025 pulsed GaN RF matched power transistor operates at the 0.96GHz to 1.2GHz frequency range to deliver 280W pulsed power.
2008-07-07 Panasonic comes up with GaN ICs for millimeter-wave comms
Panasonic has developed Gallium Nitride (GaN) ICs for the receiver in future millimeter-wave communication systems
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs
2002-12-20 NEC nitride power transistor delivers 2.3W output
NEC has developed a nitride semiconductor power transistor capable of 2.3W power amplification in the sub-millimeter band (30GHz
2015-12-07 Get 500W in converter with GaN (Part 1
Part 1 covers brick technology, a comparison of eGaN FETs to silicon MOSFETS, a basic overview of the GaN-based eighth-brick design, and experimental results
2014-02-17 GAn-on-SiC based HEMT pushes power at 150W
Using wafer fabrication processes, the HEMTs provide gain, efficiency, bandwidth and ruggedness over several bandwidth ranges.
2006-06-16 GaN transistors target cellular, WiMAX bands
RFMD is sampling out a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors for cellular infrastructure and WiMAX base stations.
2011-01-28 GaN purification process could boost LED, transistor output
The new purification process introduces voids into the GaN film near its interface with a sapphire substrate, causing thousands of defects to be sucked into the voids, thus boosting GaN devices' output
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today
2013-05-17 GaN in plastic transistor boasts breakthrough power density
Macom Technology Solutions' GaN in Plastic packaged power transistors come in 90W, 50W and 15W versions while operating at a 50V drain bias
2007-03-27 GaN HEMTs boost WiMAX power amplification
Cree is shipping sample quantities of three GaN HEMTs that are capable of boosting WiMAX power amplification efficiency by up to 50 percent
2006-06-15 GaN HEMT targets wireless, WiMAX apps
Cree is sampling its new 15W packaged GaN HEMT that is optimized for broadband wireless access and WiMAX applications
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