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2007-06-13 RFMD tips high-power 48V GaN transistors
RFMD has introduced a new family of 48V GaN power transistors that offers power performance from 10W to 120W and very wide tunable bandwidth.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs.
2015-12-14 Get 500W in converter with GaN (Part 2
In Part 2, we tackle the key details of physical and electrical design, including layout, key waveforms and losses. We also summarise key potential improvements.
2015-12-07 Get 500W in converter with GaN (Part 1
Part 1 covers brick technology, a comparison of eGaN FETs to silicon MOSFETS, a basic overview of the GaN-based eighth-brick design, and experimental results
2006-06-16 GaN transistors target cellular, WiMAX bands
RFMD is sampling out a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors for cellular infrastructure and WiMAX base stations.
2008-06-20 GaN transistors roll from TriQuint Semiconductor
TriQuint Semiconductor has released the first of its gallium nitride power transistors for a wide range of high frequency applications including mobile base station, defense and space communications systems
2011-03-31 GaN power transistors eliminate current collapse, cut power loss
Powdec K.K. and Sheffield University report that they have developed high voltage Gallium Nitride (GaN) power transistors that are hetero-junction structures based on novel principles.
2007-03-27 GaN HEMTs boost WiMAX power amplification
Cree is shipping sample quantities of three GaN HEMTs that are capable of boosting WiMAX power amplification efficiency by up to 50 percent
2008-06-24 GaN HEMT devices available for Ku-band, X-band
Toshiba America Electronic Components has added two gallium nitride semiconductor high electron mobility transistors to its power amplifier product family
2015-07-30 Diamond substrate unleashes GaN potential
Diamond substrates and heat spreaders enable GaN devices to operate near its peak power output without degradation in lifetime
2014-10-14 Creating more cost-effective GaN LEDs for homes
Plessey Semiconductors aims to be the first company to make energy-efficient LEDs for home lighting at a price that consumers will pay, and is using a technology made by Cambridge researchers.
2015-02-02 CMOS finds its match: GaN ignites shift in power
The CEO of EPC said that its low-cost gallium nitride chips will enable a range of applications from wireless charging to autonomous vehicles and more efficient cellular communications.
2014-06-23 ZuGaNG project adopts GaN for voltage converters
The GaN-based high voltage converters reduce the switching losses of power converters due to their high pulse frequency and which work reliably under high pressure and temperature
2013-01-18 TriQuint outs 35W, 32V GaN RF power transistors
The T1G4003532-FL and T1G4003532-FS are 37W discrete GaN on SiC HEMTs that operate from DC to 3.5GHz, geared to optimise power and efficiency, and to lower overall system cost
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems.
2002-10-24 TDI to sample breakthrough p-type GaN substrates
Technologies and Devices Int. Inc. has announced a breakthrough in GaN compound semiconductor material growth technology, by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity
2012-01-26 Soitec, Sumitomo demo 'smart-cut' GaN wafers
The substrates are produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates
2013-06-27 SiC, GaN lead market for solar inverters
Driven by the downstream demand for solar modules, silicon carbide and gallium nitride will grow to $1.4 billion in 2020, reflecting a solid seven per cent CAGR growth.
2014-02-24 Power semiconductor segment boosts GaN market
From its $379.82 million market value in 2012, the power semiconductor segment and the Asia Pacific market are expected to make the most money for the GaN semiconductor market through 2019
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2012-05-29 NXP, A*STAR develop next-gen GaN-ON-Si power devices
The IME and NXP team will collaborate on the development of process technologies for the manufacturing of GaN devices on 200mm wafer
2015-04-17 How to characterize GaN power devices
Here is a comparison of the degradation mechanisms of gallium-nitride FETs with silicon FETs. We will also discuss the need for waveform monitoring.
2013-04-26 GaN, SiC power IC market to rise steadily thru 2022
Worldwide revenue from sales of SiC and GaN power semiconductors is projected to rise to $2.8 billion in 2022, up from just $143 million in 2012, noted IMS Research
2007-12-21 GaN transistor touts ultrahigh breakdown voltage
A GaN power transistor with ultrahigh breakdown voltage and low on-state resistance has been announced by Panasonic for high-voltage and low-loss power switching applications
2006-08-23 GaN transistor amp delivers 400W for 3G base stations
NEC Corp. has announced the development of a compact GaN power transistor amplifier, said to have the world's highest output power level of 400W while featuring low-distortion characteristics, targeted at 3G base stations
2006-07-12 GaN RF power transistor delivers 400W
Cree announced its new high-power gallium nitride RF power transistor for mobile WiMAX applications produces a record 400W of peak pulsed RF power at 3.3GHz.
2011-01-28 GaN purification process could boost LED, transistor output
The new purification process introduces voids into the GaN film near its interface with a sapphire substrate, causing thousands of defects to be sucked into the voids, thus boosting GaN devices' output
2009-12-14 GaN inverter cuts conversion loss in motor drives
Panasonic Corp. has developed a Gallium Nitride (GaN)-based monolithic inverter IC featuring six GaN-based transistors that may be driven independently.
2013-05-17 GaN in plastic transistor boasts breakthrough power density
Macom Technology Solutions' GaN in Plastic packaged power transistors come in 90W, 50W and 15W versions while operating at a 50V drain bias.
2009-06-11 GaN HEMT amplifier claims record efficiency
Cree Inc. claims to have achieved record efficiency for a commercially available 2GHz microwave amplifier.
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