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GaN What is unity gain frequency? Search results

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What is unity gain frequency?
It is the frequency where the voltage gain of an op amp is 1. It indicates the highest usable frequency.
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2014-06-23 ZuGaNG project adopts GaN for voltage converters
The GaN-based high voltage converters reduce the switching losses of power converters due to their high pulse frequency and which work reliably under high pressure and temperature.
2012-06-21 Using microscopy to study highly doped marker layers in GaN on sapphire
Here's an investigation on gallium nitride films grown on sapphire substrate using Scanning Microwave Microscopy.
2013-01-18 TriQuint outs 35W, 32V GaN RF power transistors
The T1G4003532-FL and T1G4003532-FS are 37W discrete GaN on SiC HEMTs that operate from DC to 3.5GHz, geared to optimise power and efficiency, and to lower overall system cost.
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems.
2013-12-02 Transphorm, Fujitsu to merge GaN power device biz
Fujitsu will establish a new company in Japan for the GaN power device business, where it will transfer its combined design and development assets as well as IP rights in GaN power devices.
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2002-10-24 TDI to sample breakthrough p-type GaN substrates
Technologies and Devices Int. Inc. has announced a breakthrough in GaN compound semiconductor material growth technology, by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.
2013-06-07 TAEC debuts 200W GaN HEMT
The 200W TGI5254-200P operates in the 5.2GHz to 5.4GHz range AND enables increased output power and helps reduce size and weight in solid state power amplifiers (SSPA) for RADAR applications.
2003-04-24 Sumitomo begins latest GaN substrate mass-production
Sumitomo Electric Ind. Ltd has begun the mass-production of 2-inch GaN substrates which are essential to the manufacture of violet lasers used in next-generation optical disc equipment that supports 'Blu-ray Disc' and AOD optical disc formats.
2004-03-17 Strategy Analytics: optical storage apps to drive market for GaN
The market for gallium nitride (GaN) laser diodes will grow at a CAAGR of 195 percent through 2008, according to Strategy Analytics Inc.'s latest study, titled
2014-06-26 Sputtering method reduces GaN LED prod'n cost
University of Tokyo researchers developed a technology for creating GaN LEDs on glass substrate that could not only reduce manufacturing costs but also help to develop OLED light panels.
2012-01-26 Soitec, Sumitomo demo 'smart-cut' GaN wafers
The substrates are produced by transferring ultra-thin high quality GaN layers from a single GaN wafer to produce multiple engineered GaN substrates.
2010-12-06 Soitec, Sumitomo collaborate on engineered GaN substrates
Sumitomo to use layer transfer technology to create engineered GaN substrates
2011-07-05 Siltronic, Imec partner in GaN-on-Si research
Siltronic collaborates with Imec's GaN-on-Si research program to develop next generation LEDs and silicon wafers.
2013-06-27 SiC, GaN lead market for solar inverters
Driven by the downstream demand for solar modules, silicon carbide and gallium nitride will grow to $1.4 billion in 2020, reflecting a solid seven per cent CAGR growth.
2002-06-19 SEI develops low-dislocation single-crystal GaN substrate
SEI has developed a single-crystal GaN substrate that may be used in violet lasers for its next-generation Blu-ray Disc optical video recording technology.
2007-07-20 SDK to expand GaN-based blue LED chip production
Showa Denko K.K. (SDK) announced it will invest almost $41 million to expand the production capacity of GaN-based blue LED chips at its Chiba site to 200 million units a month by June 2008.
2005-11-10 SDK rolls GaN-based LEDs
Showa Denko K.K.'s nnounced its proprietary gallium-nitride-based near ultraviolet and green LED chips
2002-06-13 Samsung Corning begins pilot production of GaN wafers
Samsung Corning Co. Ltd has commenced pilot production of GaN wafers in its Suwon, South Korea, plant.
2007-06-13 RFMD tips high-power 48V GaN transistors
RFMD has introduced a new family of 48V GaN power transistors that offers power performance from 10W to 120W and very wide tunable bandwidth.
2006-12-01 RFMD samples GaN power amps to Tier 1 customers
RFMD announced the introduction and sampling of GaN wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and PMR customers.
2010-11-05 RFMD pushing GaN-based, ZigBee products
RFMD announced that it will showcase its remarkable high-performance RF components at electronica 2010, in Munich from November 9 to November 12, 2010.
2013-06-11 Research combines LED, power transistor in GaN chip
Engineers at Rensselaer Polytechnic Institute said the innovation could open the door to a new generation of LED technology that is less expensive to manufacture and significantly more efficient.
2013-12-23 Pushing white light efficiency through GaN-on-GaN
A startup company is betting on GaN-on-GaN for high efficiency white LEDs that could usher in a generation of devices using purely white LEDs and not blue LEDs covered with a mixture of phosphors.
2014-02-24 Power semiconductor segment boosts GaN market
From its $379.82 million market value in 2012, the power semiconductor segment and the Asia Pacific market are expected to make the most money for the GaN semiconductor market through 2019.
2013-04-10 Plessey begins production of GaN-on-silicon LEDs
Plessey Semiconductor has begun sampling LEDs made on GaN) on silicon wafers with a light output of just 2 lumens intended for indicator lamps and back-lighting applications.
2008-03-19 Perform smart verification of GAN-enabled phones
Mobile phone developers have several opportunities to test their GAN implementations against standards. Early verification of a phone's ability to handle data and voice improves the probability of success during conformance testing.
2008-07-07 Panasonic comes up with GaN ICs for millimeter-wave comms
Panasonic has developed Gallium Nitride (GaN) ICs for the receiver in future millimeter-wave communication systems.
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2012-05-29 NXP, A*STAR develop next-gen GaN-ON-Si power devices
The IME and NXP team will collaborate on the development of process technologies for the manufacturing of GaN devices on 200mm wafer.
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