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2012-08-16 Gallium Nitrate superior for 6.78MHz carrier frequency
Efficient Power Conversion claims that GaN transistors are superior for the proposed 6.78MHz carrier frequency for resonant transfer.
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
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