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2012-07-27 UCSB fellows develop the first m-plane nitride based nonpolar VCSELs
The first violet nonpolar m-plane VCSEL based on gallium nitride, developed and demonstrated at UCSB, marks new chapter in laser technology.
2004-04-13 Gallium nitride startup attracts $6 million, names new CEO
Nitronex Corp., a privately-held manufacturer of gallium nitride-based RF power transistors, said Friday (April 9, 2004) it has completed a $6 million round of additional funding.
2012-08-16 Gallium Nitrate superior for 6.78MHz carrier frequency
Efficient Power Conversion claims that GaN transistors are superior for the proposed 6.78MHz carrier frequency for resonant transfer.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2005-05-09 Emcore's gallium nitride spin-off raises $6.0 million
Emcore Corp., a manufacturer of compound semiconductor components, has spun-off product technology focused on gallium nitride power electronic devices into a startup company, named Velox Semiconductor Corp.
2012-06-21 Using microscopy to study highly doped marker layers in GaN on sapphire
Here's an investigation on gallium nitride films grown on sapphire substrate using Scanning Microwave Microscopy.
2012-09-25 TriQuint wins DARPA contract to up performance of RF power amps
The Near Junction Thermal Transport effort will build on TriQuint's advanced GaN on silicon carbide technology and the reliability of its modern RF ICs.
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems.
2013-12-02 Transphorm, Fujitsu to merge GaN power device biz
Fujitsu will establish a new company in Japan for the GaN power device business, where it will transfer its combined design and development assets as well as IP rights in GaN power devices.
2004-03-17 Strategy Analytics: optical storage apps to drive market for GaN
The market for gallium nitride (GaN) laser diodes will grow at a CAAGR of 195 percent through 2008, according to Strategy Analytics Inc.'s latest study, titled
2004-10-29 SDK blue LED features flip chip structure
Showa Denko K.K. announced that it has developed a blue LED based on gallium nitride.
2010-10-04 RFMD expands foundry services to include GaAs tech
RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers
2011-12-23 RF power market gains from wireless infrastructure
GaN, the material of choice for RF power semiconductors, is also seen to expand its market share next year.
2004-12-20 Power FET 'revolutionizes switching devices'
Matsushita Electric claims its new transistor revolutionizes switching devices.
2005-02-02 Osram Opto lights up new LEDs in market
Osram Opto Semiconductors recently welcomed the New Year with a line up of new products that promise to light up a dimming display market.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs.
2005-11-29 New LED chips from SDK
Showa Denko K.K. launched gallium-nitride-based near ultraviolet and green LED chips for use in general white lighting and backlighting of large LCD screens.
2006-08-16 New GaN sensor is sensitive to UV-A/B/C radiation
Orion Semiconductor has unveiled the OS100 Gallium Nitride ultraviolet sensor that is sensitive to UV-A, B and C radiation but completely blind to the visible spectrum.
2011-03-23 Microsemi GaN FETs suit up for outer space
Microsemi's Gallium Nitride FETs designed for satellites are built on a wideband gap material which increases performance over current radiation-hardened silicon MOSFETs.
2010-11-04 LAST POWER Project aims to develop advanced SiC and GaN semicon
The partners in a new publicly-funded European research project have just announced details of the multinational/multidisciplinary program called LAST POWER (Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications).
2002-02-22 Kyma ships free-standing, single-crystal GaN substrate
The company has shipped what is claimed to be the world's first single-crystal 50.8mm GaN wafer for use as a base material in communications and semiconductor products.
2012-10-24 Keithley combines Curve Tracer's features with parameter analyser
The firm introduced seven instrumentation, software and test fixture configurations for parametric curve tracing applications for characterizing high power devices at up to 3kV and 100A.
2013-05-16 IR starts to ship out GaN on silicon devices
The pioneering GaN-based power device technology platform is the result of ten years of research and development by IR based on the company's proprietary GaN-on-silicon epitaxial technology.
2014-04-03 IP deal to bring GaN-on-Si wafer to mainstream
MACOM announced a license and epitaxial wafer supply deal that will enable IQE to manufacture GaN-on-Silicon epi at 4, 6 and 8in diameters in high volume for RF applications.
2015-07-24 Impact of GaN technology on EMI
The value of GaN power switches is clear, in that efficiencies are vastly better than MOSFET devices. However, much more study needs to be done in EMI consequences.
2010-07-20 IMEC's GaN-on-Si team gains new members
Micron Technology, Applied Materials, and Ultratech have joined IMEC's industrial affiliation program on gallium nitride-on-silicon (GaN-on-Si) technology.
2015-04-17 How to characterize GaN power devices
Here is a comparison of the degradation mechanisms of gallium-nitride FETs with silicon FETs. We will also discuss the need for waveform monitoring.
2013-04-26 GaN, SiC power IC market to rise steadily thru 2022
Worldwide revenue from sales of SiC and GaN power semiconductors is projected to rise to $2.8 billion in 2022, up from just $143 million in 2012, noted IMS Research.
2006-06-16 GaN transistors target cellular, WiMAX bands
RFMD is sampling out a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors for cellular infrastructure and WiMAX base stations.
2008-06-20 GaN transistors roll from TriQuint Semiconductor
TriQuint Semiconductor has released the first of its gallium nitride power transistors for a wide range of high frequency applications including mobile base station, defense and space communications systems.
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