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2011-02-04 Molybdenite touted to be better than silicon
Molybdenite is an inherently two-dimensional material, permitting fabrication of thin films as thin as 6.5?. It has real potential in the production of very small transistors, LEDs and solar cells.
2012-12-26 Measuring surface potential with KFM
Know a number of experimental parameters that have significant effect on the accuracy and resolution of surface potential measurements.
2011-09-12 Measuring Hall effect in materials characterization
The ability to make precise Hall effect measurements becomes increasingly important as the need to characterize high mobility materials becomes increasingly critical.
2011-07-04 Maxwell receives funding for energy storage R&D
Maxwell's collaborative research and development in energy storage technology is going to receive $500,000 funding from the U.S. government.
2015-08-20 Market for thermal interface mat'ls to grow to $3B in 2025
The increasing need for faster, thinner and lighter electronics is opening up opportunities for thermal interface materials (TIMs) that can manage heat generation better stated IDTechEx Research.
2002-05-03 Light flash restructures carbon nanotubes
In an accidental discovery at Rensselaer Polytechnic Institute, materials researchers have found that carbon nanotubes can be restructured using light.
2011-11-21 Li-ion cells with 10x capacity under development
Researchers at Northwestern University haveÿcreated a new electrode for lithium-ion batteries that could improve charge rate and energy capacity.
2011-05-03 ITRS chairman: Tunnel FET possible transistor option
ITRS chairman, Paolo Gargini, believes that a field effect transistor (FET) combined with quantum tunneling can reduce power consumption, while maintaining adequate performance.
2013-09-09 ITRI shows atmospheric pressure process for GZO
ITRI's aePlasma offers thin-film deposition and organic film etching at atmospheric pressure for touch panel and transparent solar cell manufacturing. An alternative to ITO processes.
2012-09-03 Innovation in shaping nanowires unveiled
Researchers from Purdue University have developed a new manufacturing method for molding nanowires.
2015-07-13 IBM surpasses Intel with 7nm node tech
IBM Research claims to have perfected the extreme ultra-violet (EUV) lithography and using silicon-germanium channels for its finned field-effect transistors (FinFETs).
2014-07-11 IBM invests $3B in R&D to take on cloud, Big Data systems
Tech giant IBM is set to channel billions of funds into two research initiatives to push the limits of chip technology needed to meet the demands of cloud computing and Big Data systems.
2014-04-28 IBM 3D printer pushes prototyping to nano-scale patterns
The microscopic 3D printer uses a specialised silicon tip 100,000 times smaller than a sharpened pencil point, and can be heated to 1000C. The tip can remove substrate material based on predefined patterns, thus operating like a "nanomilling" machine with ultra high precision.
2014-06-18 Hybrid circuit casts a spotlight on carbon nanotubes
The combination of carbon nanotube thin film transistors and other thin film transistors comprising indium, gallium and zinc oxide breeds circuits that can reduce power loss and increase efficiency.
2012-11-27 Georgia Tech researchers advance graphitic nanojoints
A team of researchers from the Georgia Institute of Technology used a technique based on electron beam-induced deposition to develop the graphitic nanojoints.
2010-01-22 Fujitsu, A*STAR team on petascale computing
Supercomputers that are able undertake a quadrillion calculations per second will be used to solve challenging scientific and engineering problems.
2014-07-17 Exploring next-gen CMOS: Moving towards application
An Imec fellow is looking at many ideas floating around CMOS that can be tested and tried out, and see if they can be put to use and if a technology can be built from them.
2014-01-06 Exfoliation method targets printable photonics, electronics
NUS chemists developed a method to chemically exfoliate molybdenum disulfide crystals into high quality monolayer flakes, offering higher yield and larger flake size than other methods.
2007-01-01 End of Moore's Law prompts technology search
The search is on for a technology that could replace today's workhorse CMOS-based silicon.
2010-02-18 Editors list ISSCC surprises
The focus on power management, lack of papers on nanotechnology and software and slow recovery of attendance were among the surprises for EE Times editors at the 2010 ISSCC.
2009-12-11 Coming soon: Nanoelectromechanical systems
According to experts on emerging chip technologies, nanoelectromechanical systems, or NEMS are underappreciated and could be the next big thing in semiconductor technology.
2009-07-08 Coming soon: Carbon chips
Carbonthe basis of all organic compoundsseems destined to displace silicon as the material of choice for future semiconductors.
2010-12-14 Chipmakers keep secrets at IEDM
Few papers provided clues on vendors' plans at the 2010 International Electron Device Meeting (IEDM). In place of clear presentations on plans for 22-/20nm plans, rumors abounded, with many believing the leading-edge foundries will extend bulk CMOS.
2013-08-20 Chemical industry makes headway in printed electronics
An IDTechEx report addresses the need for chemical firms entering the electronic product space to identify the most profitable functional compounds and elements needed including allotropes of carbon.
2007-08-02 Carbon nanotubes promise stronger touchscreens
Unidym claims its transparent nanotube-based thin films will enable CE devices to use more durable touchscreens that combine the stronger-than-steel properties of carbon nanotubes with the transparency of exotic indium-based films.
2011-12-14 Carbon nanotube beats copper in 3D integration
A research team at Chalmers is working with carbon nanotubes as conductive material for TSVs, citing its thermal qualities as crucial to the application.
2015-04-23 Beyond the limits of Moore's Law
Planar silicon gave most of usand the worlda great five-decade ride! Yet now it's time to change horses, to scale out chip, logic, I/O and memory systems with new materials and mindsets.
2013-05-28 Annular electrodes as PCM solution (Part 2)
Learn about the possible advantages and limitations offered by nanotechnology and self-assembly techniques.
2014-04-11 2D molybdenum shows potential for LED prod'n
Researchers created a method for making 2D molybdenum diselenide using CVD and is widely used by the semiconductor and materials industries to make thin films of silicon, carbon fibres and other materials.
2014-06-06 2D FET exhibits high electron mobility
The FET is built from all 2D material components, suffering no performance drop-off under high voltages and providing high electron mobility even when scaled to a monolayer in thickness.
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