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2003-09-04 Toshiba power amplifier suits 5GHz WLAN apps
Toshiba Corp. has extended its line of RF GaAs HBT MMICs to include a power amplifier specifically developed for use in 5GHz WLAN systems.
1999-11-17 The role of silicon germanium in optimum technology matching
This paper will examine the process of OTM (Optimum Technology Matching), and discuss the role of SiGe within that framework.
2002-09-13 Tachyonics develops low noise RF transistor
Tachyonics Co. Ltd has announced that it has developed an RF transistor that features a NF <1dB at 2GHz, 2V.
2004-01-29 Sirenza amplifier has internal regulated bias circuit
Sirenza Microdevices has expanded its silicon germanium (SiGe) product portfolio with the release of the SGB family.
2003-12-22 Sirenza amp with active bias
Sirenza Microdevices Inc. has released the SXA-3318B gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT) MMIC.
2002-03-22 Sirenza acquires 12 percent stake in GCS
Sirenza Microdevices Inc. has acquired 12 percent stake in semiconductor wafer foundry service provider Global Communication Semiconductors Inc.
2003-09-09 RFMD migrates to six-inch manufacturing
RF Micro Devices Inc. has successfully completed its first major customer qualification of its six-inch wafer manufacturing capabilities.
2005-03-21 Pre-driver PAs power cellular base stations
RFMD's two new GaAs HBT pre-driver PAs are designed to lower the total cost of implementation for manufacturers of cellular base stations.
2007-03-01 Power transistor touts 'highest' performance level
The new power transistor from Renesas is for use in products operating in the 5GHz and 2.4GHz bands, such as WLAN terminals, digital cordless phones and RF tag readers/writers.
2002-02-21 Philips, TriQuint ink semiconductor technology pact
Philips Semiconductors, a division of Royal Philips Electronics, and TriQuint Semiconductor Inc. have signed a strategic partnership agreement that will allow Philips to access TriQuint's InGaP HBT 150mm wafer processing facilities.
2005-03-25 PAs lower implementation cost
The new half-watt and two-watt single-stage devices from RFMD lower the total cost of implementation for manufacturers of cellular base stations.
2006-06-01 NEC develops IC to compensate distortion in optical fiber
NEC has developed an IC that compensates waveform distortion of modulated signals arising from polarization mode dispersion.
2003-08-18 NDA Series Assembly Notes
This application note presents additional information for those planning to assemble an NDA Amplifier.
2003-08-18 NBB Series Assembly Notes
This application note presents additional information for those planning to assemble an NBB Amplifier.
2003-08-18 NBB and NDA Series Reliability
This application note provides additional information on component reliability with varying device junction temperature, and the effect of the package used on junction temperature.
2002-07-25 Mitsubishi W-CDMA amplifier is 35 percent smaller
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2002-06-20 Mass production technology of large size III-V compound semiconductor expitaxial wafers for microwave devices by MOVPE
This application note describes the mass production techniques for large diameter MOVPE wafers for microwave devices.
2003-03-25 IMEC, NSC partner on process technology development
IMEC and National Semiconductor have entered a four-year contract to jointly develop an 0.18?m and follow-up generation of SiGe-based BiCMOS process technology.
2000-06-12 High Efficiency Low Voltage Programmable Gain Amp
This technical note examines the RF2155, an HBT programmable gain power amplifier that is well suited for use in 900MHz application, operates up to 1GHz, and delivers 0.5W at 3.6V with an efficiency of 60 percent.
2005-09-05 HBTs deliver 0.75dB noise at 6GHz
Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices.
2006-11-22 GaAs Bluetooth power amp extends battery life
TriQuint has introduced a GaAs Bluetooth power amplifier that enables designers to offer 50 percent power added efficiency (PAE) for longer mobile device battery life.
2013-07-30 Fast turn ON/OFF 5-5.9GHz WiFi LNA with BFU730LX
This application note provides circuit simulation, schematic, layout, BOM and typical EVB performance for a 5-6GHz WiFi (WLAN) LNA.
2013-07-29 Fast turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730LX
Know the circuit simulation, schematic, layout, BOM and typical EVB performance for a 2.4-2.5GHz WiFi (WLAN) LNA.
2013-07-31 Fast turn ON/OFF 2.4-2.5GHz WiFi LNA with BFU730F
Understand the circuit simulation, schematic, layout, BOM and typical EVB performance for a 2.4-2.5GHz WiFi (WLAN) LNA.
2003-08-18 Evaluation Board Assembly Biasing Configuration
This application note provides information on the evaluation board assembly supplied by RFMD, particularly the NBB and NDA series of amplifiers.
2013-06-20 Employing 2.3-2.7GHz LNA with BFU730F
Here are circuit, layout, BOM and performance information on 2.3-2.7GHz LNA equipped with NXP's BFU730F wide band transistor.
2003-07-01 Designing low-cost CDMA front-end receivers
The constant pressure on RF design engineers to come up with low-cost RF solutions are remedied by RF Micro Devices' RF2870 small CDMA LNA/Mixer.
2003-08-18 Design of PI and T Network Attenuators for Inter-Stage Buffering
This application note discusses the design of PI and T network attenuators for Inter-Stage Buffering.
2003-10-03 CDMA/AMPS 4mm x 4mm Power Amplifier Modules
This application note gives a general description and discusses the evaluation board, minimum test bench requirements, turn on procedures, and layout considerations of CDMA/AMPS 4mm x 4mm Power Amplifier Modules.
2003-08-18 Bias Scheme for NBB-Series Amplifiers
This application note presents a schematic representation of the NBB-series amplifier.
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