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2003-06-27 Paralleling HEXFET Power MOSFETs
This application note discusses the proper procedures in implementing parallel operation for a HEXFET Power MOSFET
2000-05-04 Paralleling HEXFET power MOSFETs
The three most important parameters in paralleling operations are voltage current and junction temperature. The application note analyzes the effects of current and temperature unbalances.
2005-06-02 Paralleling HEXFET power MOSFETs
This app note demonstrates paralleling to reduce conduction losses and junction to case thermal resistance
2003-06-30 Measuring HEXFET Characteristics
This application note discusses methods for measuring HEXFET Power MOSFET characteristics, both with a curve tracer and with special-purpose test circuits.
2006-02-15 IR extends HEXFET MOSFET family
International Rectifier introduced the 100V-rated IRLR3110Z, a new addition to its logic-level trench HEXFET MOSFET family.
2003-06-27 How P-Channel HEXFET Power MOSFETs Can Simplify your Circuit
This application note discusses the application of P-Channel HEXFET power MOSFET in simplifying circuitry design.
2000-05-04 How p-channel HEXFET power MOSFETs can simplify your circuit
As explained in this application note, the P-channel MOSFET has significant higher power losses that discourage its application in higher power circuits.
2006-02-07 HEXFET power MOSFETs deliver higher light-load efficiency
IR's new pair of 30V HEXFET power MOSFETs deliver up to 2% higher light-load efficiency over solutions using 30V MOSFETs in 45A, two phase synchronous buck converters.
2006-05-12 HEXFET MOSFETs meet small size, high efficiency requirements
International Rectifier introduced the IRF7835PbF and IRF7836PbF, 30V synchronous buck HEXFET MOSFETs for DC/DC synchronous point-of-load converters.
2006-04-12 HEXFET MOSFETs deliver optimized conduction, switching
International Rectifier introduced four SO-8 30V dual HEXFET MOSFETs for synchronous buck converter applications up to 6A.
2003-06-20 Wafer Level Package Technology
This application note discusses the properties and functions of the Wafer Level Package technology
2000-05-04 Use gate charge to design the gate drive circuit for power MOSFETs and IGBTs
Designers unfamiliar with MOSFET or IGBT input characteristics begin drive circuit design by determining component values based on the gate-to-source or input capacitance listed on the data sheet. The application note provides gate-charge specifications for power MOSFETs.
2003-06-27 The Do's and Don'ts of Using MOS-Gated Transistors
This application note discusses the basic operation principles for Power HEXFET's, so as to enable the end-user to maximize their performance.
2000-05-04 The do's and don'ts of using MOS-Gated transistors
In this application note, some of the most common do's and don'ts of using power HEXFET are described. The objective is to help the user get the most out of these devices, while reducing on-the-job learning time to minimum.
2006-03-14 Synchronous rectifier IC boosts flyback, resonant half-bridge designs
International Rectifier touts its SmartRectifier chipset, which comprises the IR1167 with external HEXFET MOSFETs, as the first high-efficiency solution that's viable from the standpoint of technology and cost.
2000-02-24 SMPS MOSFET
This application note describes the IRFB31N20D, IRFS31N20D, and IRFSL31N20D HEXFET Power MOSFET devices for high-frequency dc-dc converter applications.
2003-06-30 Protecting IGBTs and MOSFETs from ESD
This application note discusses how to protect IGBTS and MOSFETs from ESD and how HEXFET users can implement and benefit from similar ESD control programs.
2000-12-01 Protecting IGBTs and MOSFETs from ESD
This application note discusses how HEXFET users can implement and benefit from International Rectifier's ESD control programs.
2005-12-21 Power MOSFETs offers 30% part count reduction
IR's new 75V and 100V HEXFET power MOSFETs enable a part count reduction of 30% or more in secondary synchronous rectification, full-bridge topology power supplies.
2003-09-03 Power MOSFETs improve comms systems performance
The the 100V-rated IRF7495 and the 80V-rated IRF7493 n-channel HEXFET power MOSFETs from International Rectifier feature low gate-to-drain charge.
2011-07-21 Power MOSFET targets low power apps
International Rectifier features new additions to its PQFN packaging that feature HEXFET MOSFETs that are said to offer high density and cost efficiency for low power applications.
2011-06-17 Power MOSFET supports low power applications
IR has unveiled a PQFN 2x2mm package featuring its latest HEXFET MOSFET silicon that promises an ultra-compact, high density and efficient solution for a wide variety of lower power applications.
2006-11-06 Power MOSFET promises 95 percent efficiency
The IRF6641TRPBF power MOSFET from International Rectifier is a 200V HEXFET that uses DirectFET package technology and promises an efficiency of up to 95 percent.
2006-05-22 MOSFETs designed for switching converter apps
International Rectifier introduced new negative-channel 60, 80 and 100V HEXFET MOSFETs for switching converter applications used in networking and communications systems.
2007-04-11 MOSFET chipset targets high-current DC/DCs
International Rectifier has introduced a new DirectFET MOSFET chipset for high-current DC/DC converters used in notebook, high-end desktops and servers, and advanced telecom and datacom systems.
2003-06-30 Maximizing the Effectiveness of your SMD Assemblies
This application note discusses the proper procedures and techniques to maximize the SMD Assembly.
2002-10-29 Low on-resistance suits MOSFET for automotive use
IR's automotive-specific trench-HEXFET technology is said to offer 15 percent lower device on-resistance per unit area than competing technologies.
2003-06-27 Linear Power Amplifier Using Complementary HEXFETs
This application note discusses the benefits of using complementary HEXFETs on a Linear Power Amplifier.
2000-05-04 Linear power amplifier using complementary HEXFETs
The class AB amplifier described in this application note uses a complementary pair of HEXFET power MOSFET devices as the output stage. This feature offers performance improvements over the equivalent bipolar output stage.
2002-02-11 IRF MOSFETs offer 40 percent lower on-resistance
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