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2009-12-11 ST chooses Applied Materials' HKMG for 28nm
HKMG is an emerging technology that allows faster switching speed while reducing device power consumption.
2011-01-20 SoC design solution optimized for HKMG tech
Synopsys Inc. announced that it is delivering a low-power, high-performance SoC design solution optimized for the Common Platform alliance (CPA) 28nm high-k metal gate (HKMG) technology.
2016-02-22 SMIC, Leadcore to roll out smartphone SoC in HKMG process
Based on SMIC's 28nm HKMG process platform, the smartphone SoC launched by Leadcore promises better performance, higher speed and lower power consumption, and 1.6GHz CPU performance.
2010-11-12 Samsung's 32nm HKMG process ready to roll
Samsung Electronics Co. Ltd reports on the readiness of the process and designs for its 32nm low-power process with a high-k/metal-gate technology which was qualified in June.
2012-06-15 Imec evaluates gate-last HKMG alternatives
Researchers are looking at RMG integration options for different applications, materials selection and engineering, and compatibility with advanced modules and device architectures.
2009-10-09 ARM, GlobalFoundries partner on 28nm HKMG
The partnership will initially focus on enabling SoC products based on the ARM Cortex -A9 processor.
2014-01-24 Apple taps Samsung 28nm HKMG process for A7
Chipworks' Sinjin Dixon-Warren dissects the front end of line transistor structure used in the A7, with comparison to advanced technologies used by both Apple and other vendors.
2011-09-26 20nm process features HKMG tech
Samsung is set to unveil its 20nm planar process that uses standard bulk CMOS.
2013-07-25 UMC, SuVolta team up for 28nm low-power process tech
The joint effort aims to yield a process that integrates SuVolta's Deeply Depleted Channel transistor technology into UMC's 28nm High-K Metal Gate high-performance mobile process.
2016-02-22 UMC 28HPC POPs expands ARM 28nm IP portfolio
ARM has developed the ARM Artisan physical IP platform that includes standard cell libraries and memory compilers and POP technology for the 64bit ARM Cortex-A53 processor, and ARM Cortex-A7.
2012-02-23 Samsung may give TSMC a run for its money
With the industry bracing itself for a tight supply of 28nm from TSMC, Samsung's 32nm process and excess capacity manufacturing facilities could prove an attractive alternative to the likes of Nvidia, or even AMD.
2012-02-23 Samsung goes quad-core
The new chip comes in versions using two or four ARM Cortex A9 cores running at rates from 200MHz to 1.5GHz along with a 64bit ARM Neon media processing block.
2014-01-29 China foundry announces 28nm-process readiness
SMIC said it successfully entered Multi Project Wafer (MPW) stage to support customer's requirements on both 28nm PolySiON and 28nm high-k dielectrics metal gate processes.
2012-02-01 CEO outlines Globalfoundries' future plans
Globalfoundries did not disclose its 2011 revenues, but after its challenges with yields on AMD chips and a restrictive wafer supply agreement, there is speculation in financial circles that the firm may well have missed its 20 percent growth projection.
2014-12-19 Cadence, Globalfoundries out ARM Cortex-A17 quad-core silicon
The companies unveiled what they claim as the first SoC enabled solution using Globalfoundries' 28nm-SLP process with HKMG technology and Cadence digital implementation and signoff flow.
2015-05-14 A closer look at Samsung's 14nm node
Samsung has lagged Intel in the release of its process nodes, especially with the 20nm node that was two years behind Intel. Remarkably, Samsung has shrunk the lag for its 14nm to about six months.
2010-09-13 32nm application processor features 2D graphics acceleration
Samsung Electronics Co. Ltd demonstrated its Saratoga 32nm application processor at the 7th annual Samsung Mobile Solutions Forum.
2011-01-20 32/28-nm reference flow for Common Platform Alliance ushered
Cadence's 32/28nm Low-Power RTL-to-GDSII Silicon Realization Reference features new design intent, abstraction and convergence capabilities giving more deterministic path to advanced silicon.
2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2009-08-26 TSMC injects low-power process into 28nm roadmap
Taiwan Semiconductor Manufacturing Co. Ltd will include a low-power (LP) process to its 28nm high-k metal gate (HKMG) road map.
2009-06-22 Toshiba, NEC join IBM alliance at 28nm tech
NEC Electronics and Toshiba have extended technology development agreements with IBM to participate in the development of a 28nm, HKMG, low-power chip technology.
2012-09-28 ReRAM in 28nm logic process piques TSMC's interest
A research team from National Tsing-Hua University found that a contact RRAM (CRRAM) cell has been realised in a HKMG 28-nm CMOS logic process without the use of any additional masking or process steps.
2009-06-18 Globalfoundries touts 22nm high-k advance
Globalfoundries has detailed an innovative technology that could overcome one of the key hurdles to advancing high-k metal gate (HKMG) transistors, bringing the industry one step closer to the next generation of mobile devices with more computing power and vastly improved battery life.
2011-12-02 Dual-core processor delivers 14BIPS at 2GHz
Samsung's Exynos 5250 uses 32nm HKMG low-power process technology that features a doubled memory bandwidth of 12.8GB/s.
2014-03-28 CMOS or FinFET: Exploring cost-effective solutions
The 16/14nm FinFET and 20nm bulk high-K metal gate CMOS next-gen processes deliver small transistors at a price higher that the current 28nm bulk HKMG CMOS.
2011-10-28 Benefits of anti-fuse NVM in 28nm high-K metal gate
At smaller process geometries, especially 28nm HKMG, the challenges to integrating NVM such as flash, pseudo flash, and e-fuse are effectively addressed with an anti-fuse solution.
2008-01-25 45nm: What Intel didn't tell you
Some high points of Intel's 45nm HKMG technology are: high-k first, metal-gate-last integration; hafnium oxide (HfO2) gate dielectric (1nm EOT); and dual band-edge work function metal gates (TiN for PMOS; TiAlN for NMOS). The gate-last integration is one point that needs a bit of clarification in the Intel process flow.
2011-11-08 Yield issues, defects mount in 28nm node
Are customers feeding overly optimistic targets for the 28nm process technology than the actual demand?
2011-11-25 WD overcomes Hitachi acquisition hurdle
WD must now look for a buyer to sell its 3.5in disk drive business unit and production plant in order to pass the regulatory obstacles of its bid to buy Hitachi.
2012-05-23 UMC gains from TSMC 28nm supply issues
Inadequate volume to meet demand at TSMC has prompted comments from some of its customers and others, including Qualcomm.
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