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2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2008-02-18 Use UWB in ultralow-power Zigbee sensor nodes
The IEEE 802.15.4 standardization committee who defined the MAC and PHY adopted by Zigbee has proposed an alternative PHY relying on UWB technology.
2012-11-28 Union Semiconductor turns to West as mobile bogs down
One of the few China fabless chip companies working to develop markets in the U.S. and Europe, Union semiconductor is exploring new customers in security, wireless hotspots and Ethernet.
2009-03-12 Ultra-thin chips flex to fit into garments
Chips with a thickness of below 60?m could enable manufacturers to design garment with integrated electronic circuits for applications such as health and comfort monitoring.
2006-09-18 U.S. EDA monopoly may wane
Recent developments in Europe may challenge U.S. dominance over EDA in years to come.
2009-06-15 TSMC weighs in on e-beam, EUV litho
Foundry giant Taiwan Semiconductor Manufacturing Co. Ltd is still backing two horses in the race to the next lithography extreme ultraviolet lithography (EUVL) and clustered electron-beam.
2009-10-07 TSMC pumps capital, R&D investments
Foundry giant Taiwan Semiconductor Manufacturing Co. Ltd is expected announce by the end of the month that it will, again, increase its capital expenditure and R&D funding in the coming year.
2011-05-17 TSMC expands R&D efforts with Sematech affiliation
TSMC is now one of the core members of Sematech. This will accelerate the improvement of R&D and manufacturing solutions in leading edge technologies.
2009-07-09 Top 10 industry issues
Here are the top 10 looming issues that the semiconductor capital equipment industry is facing.
2005-06-17 TI outlines further CMOS scaling
Texas Instruments Inc. (TI) is presenting papers that describe key accomplishments on advanced materials and manufacturing process development at the 2005 Symposium on VLSI Technology.
2004-03-11 Three chip giants form European technology project
Europe's three largest semiconductor companies - Infineon, Philips and STMicroelectronics - are teaming up with a network of European technology research laboratories to kick off a new CMOS logic technology development project called NanoCMOS.
2009-11-23 The path to gigabit-per-second wireless
When WiMedia stumbled, the path to gigabit-per-second wireless suddenly became not clear anymore. All eyes turnedor should have turnedto 60GHz.
2011-10-14 The move toward 3D chips
Semiconductor fabrication is moving toward 3D ICs and by next year, 3D chips will be available for commercialization.
2008-12-01 Telehealth age dawns
Remote monitoring using wireless technology is finally getting its interoperability act together worldwide. Telehealth technologies are being developed and deployed to reduce visits to hospitals and doctors' offices and improve patient health with lifestyle coaching.
2012-02-17 TEL joins DSA, maskless litho projects
Japan's Tokyo Electron Ltd (TEL) is working with on two collaborative lithography research projects spearheaded by the CEA-Leti research institute.
2006-09-18 Team of former ST engineers offers free 64bit processor
Simply RISC, a team of engineers formerly with STMicroelectronics, has produced its first offering, a 64bit processor codenamed Sirocco.
2001-05-16 Syntax raises RTL abstraction level
A University of Toronto professor has proposed a new RTL abstraction syntax that he claimed can be implemented by a modest extension to traditional imperative programming languages.
2015-06-22 Synopsys rolls out latest photonics design tools
The RSoft 2015.06 release promises to facilitate faster, more efficient design of various current and emerging photonic devices, photonic circuits and fibre-based applications.
2009-02-11 Startup readies RRAMs for mass production
Australian startup 4DS Inc. claims to have made a major breakthrough in resistive RAM (RRAM) technology.
2007-07-19 Startup brews 'perfect storm' for R&D
Intermolecular has unveiled a new platform of "fab in a lab" technologies, which it claims will facilitate R&D of IC materials, processes and device structures.
2004-08-31 Spin-on, low-k dielectrics remain viable
The ultimate ultra-low-k material that complies with the future microelectronics industry has not yet been found. The race between spin-on and CVD-deposited materials is still ongoing.
2013-05-09 Solliance reveals earth-friendly OPV production
The research initiative achieved a world first with an inkjet printing process for manufacturing environmentally friendly OPV cells that deliver benchmark efficiency.
2002-03-11 SoC stumbling blocks cataloged at DATE
It's not enough to be fast, efficient and technically proficient. Designers now must become Renaissance engineers.
2002-10-30 SMIC moves carefully towards 90nm development
Semiconductor Mfg Int. Corp. is gathering the tools it needs, including a 193nm scanner, to boost efficiency as it enters into 130nm manufacturing and prepares to begin basic development work for 90nm technology.
2004-03-12 SMIC aims high with Beijing fab
Semiconductor Manufacturing Int. Corp.'s massive 300mm (12-inch) semiconductor fab now under construction here may well be one of the most controversial - and celebrated - China development projects since Emperor Qin Shi Huang laid the foundation for the Great Wall of China in 214 B.C.
2013-05-10 Silver lining for Japanese fabs
The latest chatter on the streets of Tokyo is that at least one foreign company is bidding for a fab that a Japanese chip company is trying to dump.
2011-12-08 Silicon solar cells show 23.3% efficiency
The newly-developed interdigitated back-contact silicon solar cells feature n-type base float-zone (FZ) silicon substrates and SiN single layer anti-reflective coating.
2010-09-09 Silicon solar cells show 19.4% conversion
Copper-based front-side metallization makes the cells cheaper for future industrial production.
2011-03-01 SiGe chipset claims highest frequency rate
The DotFive project hopes to reduce the cost of THz devices by casting them in high-frequency SiGe. It is also keen on developing millimeter wavelength SiGe hetero-junction BiCMOS.
2005-04-12 Shift to 65nm designs likely to be quick
Many IC designers may quickly move past the 90nm node for digital-dominated designs to 65nm design rules.
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