Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > LDMOS RF

LDMOS RF Search results

?
?
total search93 articles
2007-04-23 Using the DS4303 to bias LDMOS RF power amps
One key element to providing high performance with LDMOS amplifiers is compensating the gate bias voltage to maintain a constant quiescent current over temperature
2002-03-01 UltraRF appoints Arrow as LDMOS distributor for North America
UltraRF Inc. has appointed wireless electronics component distributor Arrow Electronics Inc. to handle its RF power semiconductor products in North America
2007-10-19 RF power transistors suit broadcast, ISM markets
Freescale has rolled out new RF power transistors based on its VHV6 50V LDMOS technology, which is claimed to be the first 50V LDMOS technology introduced for broadcast and ISM markets.
2008-04-07 RF power transistors eye 2.5-2.7GHz WiMAX
Infineon Technologies AG has released two new LDMOS RF power transistors targeting wireless infrastructure applications such as WiMAX in the 2.5-2.7GHz frequency band.
2011-06-14 RF power transistor delivers 60MHz
NXP has launched Gen8 RF power transistors that are designed for wireless base stations and can deliver signal bandwidths of up to 60MHz
2009-08-31 RF power devices tip flexibility for TD-SCDMA
Freescale Semiconductor has introduced two final-stage LDMOS RF power transistors for TD-SCDMA networks.
2009-03-16 RF ICs handle up to 2GHz wireless apps
Freescale Semiconductor has introduced the LDMOS driver amplifier RF ICs designed to set new standards for video bandwidth, gain and efficiency for broadband networks.
2006-06-15 Next-gen LDMOS supports WIMAX, 802.16 bands
Infineon's new LDMOS tech will yield transistors that operate up to 3.8GHz, which is within the WiMAX and IEEE 802.16 wireless access frequency bands
2011-05-03 LDMOS transistors cover full frequency for wireless stations
Freescale introduces LDMOS power transistors that can cover full frequency bands, allowing high efficiency and wide bandwidth for network operators
2008-11-26 LDMOS transistor delivers 500W RF output power
NXP Semiconductors has released its latest LDMOS transistor for L-band radar applications that delivers RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.
2008-03-07 LDMOS RF power transistors eye China market
A portfolio of RF power transistors based on LDMOS technology has been launched by TriQuint Semiconductor for China.
2007-06-06 LDMOS RF power transistor delivers 1kW output
Freescale Semiconductor unveiled what it claims as the highest power LDMOS RF power transistor, the MRF6VP11KH that delivers pulsed RF output power of 1kW at 130MHz.
2009-04-08 Integrated RF LDMOS bias controllers debut
Maxim Integrated Products has introduced the MAX1385/MAX1386/MAX11008 dual RF laterally diffused metal oxide semiconductor (LDMOS) bias controllers, which the company claims is the industry's smallest to integrate all of the A/D and D/A interfaces and logic functions for cellular base station control.
2015-07-22 Freescale expands broadband RF power amplifier line-up
The Airfast AFIC901N LDMOS RF integrated device and the AFT05MS003N LDMOS transistor can be operated at 3.6V or 7.5V and are geared for industrial radios.
2008-06-05 Freescale debuts 50V LDMOS power transistors for L-Band
Freescale Semiconductor has unveiled the world's first 50V LDMOS RF power transistor for L-Band radar applications.
2010-05-26 Dual-path RF transistors save cost in TD-SCMDA amps
Freescale Semiconductor has developed two LDMOS RF power transistors optimized for power amplifiers in base stations serving TD-SCDMA wireless networks
2002-01-24 Xicor, Motorola collaborate on Smart Biasing for RF PAs
Xicor Inc. has teamed up with Motorola to provide RF power amplifier (PA) reference platforms for GSM, EDGE and W-CDMA cellular base station applications
2014-06-09 Wireless infrastructure drives RF power IC growth
As wireless continues to expand, high-power RF equipment will play a critical role. This gives a boon to GaN, which has been named the material of choice for RF power semiconductors
2015-08-13 Weak mobile infrastructure opens opportunities for RF chips
The report from Mobile Experts, which analyses transceivers for bandwidth, power level and other factors, couldn't have picked a better time just as the market seems to slow down.
2010-06-23 Using the MCP4728 12bit DAC for LDMOS amplifier bias control applications
The DAC is favourably used in the bias control circuit for the base station power amplifier module. In practical applications, the bias control circuit maintains the IDQ within a 4 percent range. This application note shows an example of how the DAC converter is used for this purpose.
2006-08-01 Sirenza unveils 'first' SOF 26-packaged LDMOS transistor
Sirenza has released its first plastic encapsulated, surface mount packaged LDMOS transistor exclusively housed in the company's low thermal resistant SOF-26 package
2002-08-20 Sirenza to acquire LDMOS developer
Sirenza Microdevices has signed a pact with Xemod to acquire the latter for about $4.5 million in cash.
2008-11-27 RF transistors deliver high performance at wide bandwidth
TriQuint Semiconductor has announced the availability of a new high power discrete RF transistor family for broadband applications including radar, signal jammers and wireless communications
2012-09-04 RF transistor aimed at secondary surveillance radar aviation apps
Microsemi's 1011GN-700ELM is based on GaN on SiC technologies, and operates at 1030MHz and supports short- and long-pulsed extended length message.
2011-07-05 RF solutions deliver wide bandwidth, improved power density
Freescale has introduced a new family of RF power solutions that provide power density, signal bandwidth, cost effectiveness and linear efficiency/gain
2010-11-18 RF power transistors tout ruggedness, affordability
Freescale launches RF power transistors for industrial and commercial aerospace applications
2007-07-05 RF power transistors overcome Doherty limits
Freescale has released new power transistors that enable wireless base stations to exploit the full potential of the Doherty architecture.
2013-06-10 RF power transistors aimed at 2.45GHz ISM band
The devices are based on NXP's latest 28V LDMOS processes and all feature NXP's field-proven ruggedness, manufacturing consistency and long-term reliability
2011-12-23 RF power market gains from wireless infrastructure
GaN, the material of choice for RF power semiconductors, is also seen to expand its market share next year
2004-06-14 RF LDMOS transistor family just right for 2.5G, 3G wireless infrastructure
Freescale Semiconductor added sixth-generation RF products to its line of LDMOS power transistors for 2.5G and 3G wireless infrastructure apps.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top