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What is a MOSFET?
Metal Oxide Semiconductor Field Effect Transistor, or simply MOSFET, is the most commonly used field effect transistor for both analog and digital circuits. It is composed of two channels: n-type or p-type semiconductor materials, accordingly referred to as NMOSFET and PMOSFET.
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2002-08-09 Linear Tech SSPR synchronously drives MOSFETs at 500kHz
The LT3710 SSPR from Linear Technology Corp. drives two external N-channel MOSFETs synchronously up to 500kHz switching frequency.
2003-12-18 Linear Tech side drivers protect power MOSFETs
Linear Technology Corp. has introduced two secondary side synchronous N-channel MOSFET drivers that feature timer and current sense comparators to protect the external MOSFETs during normal and light load operation, power up/down, and when the driver supply voltage drops too low.
2013-03-22 Level shifting for power MOSFETs control
Find out how system power sequencing and level shifting can be accomplished using a low-voltage system manager.
2002-01-15 IXYS rolls out high-voltage, depletion-mode MOSFETs
The IXTP01N100D and IXTP02N50D high-voltage, depletion-mode MOSFETs are normally on at 0V gate bias and require a negative gate bias to block current.
2002-01-07 IXYS driver IC controls high-current power MOSFETs, IGBTs
The IXDD415 is a high-speed, HF CMOS MOSFET/IGBT driver IC that has two driver channels, each capable of 15A peak into a capacitive load.
2002-07-25 IXYS chips drive large-volume, midrange MOSFETs, IGBTs
IXYS Corp.'s dual 2A MOSFET/IGBT driver (IXD402) and single 9A device (IXD409) are optimized to drive large-volume, midpower-range IGBTs and MOSFETs with inverting or noninverting configuration.
2002-02-11 IRF MOSFETs offer 40 percent lower on-resistance
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2006-07-18 IR's new MOSFETs improve synchronous rectification
IR said its new range of 60V and 75V HEXFET MOSFETs promise superior synchronous rectification performance through improved RDS(on) in AC/DC SMPS applications.
2005-10-11 IR's DirectFET power MOSFETs reduce system-level power loss
IR unveiled two DirectFET power MOSFETs promise to reduce system-level power loss as much as 10% versus "enhanced SO-8" devices in medium power 200W DC/DC bus converter apps commonly found in networking and communications systems.
2002-05-06 IR ships active clamp reset MOSFETs
International Rectifier has released the IRF6126 and IRF6217 p-channel HEXFET power MOSFETs designed specifically for active clamp reset circuits in 48V isolated dc/dc converters using forward converter, flyback, or similar topologies.
2004-12-03 IR power MOSFETs increases safety margin
International Rectifier introduced a pair of new 55V-rated Q101-qualified automotive HEXFET power MOSFETs rated for continuous duty in the D2Pak outline.
2003-03-31 IR power MOSFETs handle more current
International Rectifier's new 12V HEXFET power MOSFETs deliver up to 15 percent higher current handling capability as compared to industry standard devices.
2002-12-11 IR MOSFETs target ZVS power supplies
The L-Series of 500V HEXFET power MOSFETs feature fast recovery body diodes for the reliable operation of ZVS power supplies.
2004-11-18 IR MOSFETs offer low on-resistance
International Rectifier announced a new range of 75V and 100V HEXFET MOSFETs designed for AC-DC synchronous rectification and ORing circuits.
2004-03-16 IR MOSFETs meet 4.5V gate drive requirements
International Rectifier has introduced five logic-level trench HEXFET power MOSFETs that can meet gate drive requirements as low as 4.5V.
2002-08-19 IR MOSFETS increase efficiency
International Rectifier has introduced a series of 150V and 200V HEXFET power MOSFETs that increase efficiency by up to one percent in 48V-input isolated dc/dc converters.
2002-03-11 IR MOSFETs have 50 percent lower on-resistance
International Rectifier has announced the availability of its IRL3713 series of HEXFET power MOSFETS that feature a maximum on-resistance of 3 milliohms50 percent lower than previous products.
2002-04-30 IR MOSFETs deliver 25 percent lower on-resistance
The IRF7754, IRF7755, IRF7756, and IRF7757 dual-power MOSFETs from International Rectifiers deliver up to 25 percent lower on-resistance than similar competing devices, thereby improving power system efficiency and extending the battery life of portable electronic equipment.
2003-01-14 IR MOSFETs boast low on-resistance
International Rectifier's IRLR7833 and IRLR7821 HEXFET power MOSFETs are the company's lowest on-resistance, 30V MOSFET in a D-Pak outline.
2006-08-03 IR launches three 25V DirectFET MOSFETs
IR has introduced three 25V DirectFET MOSFETs for applications requiring high efficiency and improved thermal conductivity to increase power density.
2008-07-08 IR designs MOSFETs for power supplies, electric motors
From International Rectifier comes a new family of 60V and 75V MOSFETs optimized for industrial battery applications such as e-bikes, scooters and utility carts.
2002-09-10 IR automotive MOSFETs have reduced on-resistance
International Rectifier has expanded and improved its portfolio of automotive HEXFET power MOSFETs with 10 percent lower on-resistance than previous devices.
2014-07-09 IR augments 60V MOSFETs line for industrial apps
The MOSFETs, which feature ultra-low on-state resistance, are aimed at power tools, LEV inverters, DC motor drives, Li-ion battery pack protection, and SMPS secondary-side synchronous rectification.
2001-09-20 Introduction to power MOSFETs
This application note details the characteristics of power MOSFETs. It also compares MOSFETs and bipolar transistors, and discusses the major advantages of MOSFETs over BJTs.
2002-05-20 Intersil driver MOSFETs shrink to micro-leads
Three entries to Intersil Corp.'s Endura line of driver MOSFETs in MLFPs target designs in which board real estate and power dissipation are significant concerns.
2000-12-11 Insuring reliable performance from power MOSFETs
This application note is intended to help circuit designers in developing reliable power MOSFET circuits by examining six potential problem areas and by offering suggestions in eliminating problems in each area.
2015-02-09 Infineon unveils MOSFETs with 'lowest' on-state resistance
The next-generation power MOSFETs are optimised for high switching frequencies used in synchronous rectification applications. They also provide high levels of power density and energy efficiency.
2014-05-19 Infineon outs leadless SMD package for CoolMOS MOSFETs
The ThinPAK 5x6 package guarantees more flexibility in PCB designs and better switching performance, which paves the way for more efficient power conversion while cutting overall system size
2004-10-26 Infineon MOSFETs with trench power technology
Infineon unveiled OptiMOS-T, a new family of green power MOSFETs incorporating trench power technology and PROFET.
2003-11-07 Infineon MOSFETs save up to 50 percent board space
Infineon Technologies has announced the first members of its power semiconductor family.
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