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MOSFETS What is a MOSFET? Search results

What is a MOSFET?
Metal Oxide Semiconductor Field Effect Transistor, or simply MOSFET, is the most commonly used field effect transistor for both analog and digital circuits. It is composed of two channels: n-type or p-type semiconductor materials, accordingly referred to as NMOSFET and PMOSFET.
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2005-11-02 Infineon MOSFETs offer 'exceptionally' low on-state resistance
Infineon Technologies AG unveiled its CoolMOS CP series of MOSFETs designed for high-efficiency power supplies.
2011-09-08 Infineon launches P-channel 40V auto power MOSFETs
Infineon has announced the release of OptiMOS P2, an Infineon power management chip, which showed energy efficiency and cost saving.
2015-03-13 Infineon delivers energy-saving power MOSFETs
Implementing the new OptiMOS 25V from Infineon Technologies would lead to energy savings of 26.3kWh per year for a single 130W server CPU working 365 days.
2008-03-05 Infineon debuts 900V superjunction MOSFETs
Infineon has introduced what it claims as the industry's first 900V superjunction MOSFETs designed for high-efficiency SMPS apps.
2014-06-17 III-V MOSFETs rival Si-based transistors
The transistors are fabricated with indium-gallium-arsenide atop an indium-phospide substrate. They possess 20nm gate lengths, 0.5mA per micron width on-current and 100nA off-current when operating at voltages similar to Si.
2005-06-02 How P-Channel MOSFETs can simplify your circuit
This app note explains how P-Channel HEXFET power MOSFETs offer the designer a new option that can simplify circuitry while optimizing performance and parts count.
2003-06-27 How P-Channel HEXFET Power MOSFETs Can Simplify your Circuit
This application note discusses the application of P-Channel HEXFET power MOSFET in simplifying circuitry design.
2000-05-04 How p-channel HEXFET power MOSFETs can simplify your circuit
As explained in this application note, the P-channel MOSFET has significant higher power losses that discourage its application in higher power circuits.
2002-06-11 Hitachi MOSFETs offer reduced on-resistance
Hitachi Ltd's 8th-generation n-channel power MOSFETs come with reduced cell sizes by up to 70 percent and on-resistance by up to 45 percent, compared to the company's previous products.
2002-12-23 Hitachi IC integrates two MOSFETs, Schottky barrier diode
The HAT2180RP composite power MOSFET from Hitachi Ltd integrates two power MOSFETs and a Schottky barrier diode into an SOP-14 package.
2008-06-02 Highly efficient power MOSFETs serve handheld wireless equipment
From Renesas Technology Corp. comes the RQA0010 and RQA0014 high-frequency power MOSFETs that the company claims achieve the industry's highest efficiency class and the high reliability of ESD immunity level 4.
2015-03-04 High-voltage pulse generators make use of SiC MOSFETs
ROHM's SiC MOSFET, allowing for further miniaturisation and greater performance, marks its first application in new ultra high-voltage pulse generators made by Fukushima SiC Applied Engineering Inc.
2008-02-27 High-performance MOSFETs leave tiny footprint
Having a 1mm x 0.6mm footprint, NXP's new SOT883 MOSFETs deliver power dissipation and performance comparable to SOT23, while occupying only 14 percent of the PCB.
2000-12-05 High-current dc motor drive uses low on-resistance surface mount MOSFETs
This application note presents a 5A DC motor drive using all surface-mount components required with the exception of the filter capacitor.
2006-02-07 HEXFET power MOSFETs deliver higher light-load efficiency
IR's new pair of 30V HEXFET power MOSFETs deliver up to 2% higher light-load efficiency over solutions using 30V MOSFETs in 45A, two phase synchronous buck converters.
2006-05-12 HEXFET MOSFETs meet small size, high efficiency requirements
International Rectifier introduced the IRF7835PbF and IRF7836PbF, 30V synchronous buck HEXFET MOSFETs for DC/DC synchronous point-of-load converters.
2006-04-12 HEXFET MOSFETs deliver optimized conduction, switching
International Rectifier introduced four SO-8 30V dual HEXFET MOSFETs for synchronous buck converter applications up to 6A.
2010-12-03 Hermetic radiation-hardened 100V MOSFETs in smaller packages
International Rectifier unveils smaller package for MOSFETs designed for space applications
2010-10-07 GigaMOS TrenchT2 MOSFETs come in low-profile DE-series packages
IXYS introduced the new additions to its GigaMOS TrenchT2 Power MOSFET portfolio, the IXTZ550N055T2 and the IXFZ520N075T2. These devices combine the high-current ratings of IXYS' GigaMOS TrenchT2 product line with the advanced electrical, thermal and mechanical properties of IXYS' ultra-low profile DE-Series package technology.
2013-07-22 Gate Driver IC drives MOSFETs, IGBTs operation up to 600V
IXYS's IX2113 High and Low Side Gate Driver IC boasts a 700V absolute maximum rating, providing additional margin for high voltage applications.
2001-04-20 Gate drive design for large die MOSFETs
This application note identifies the important criteria and parameters for designing MOS-gated devices, and describes the design rules for proper layout.
2007-06-01 Fast-diode MOSFETs incurrent commutation
A MOSFET with a fast-recover diode can improve the body diode performance in a three-phase inverter topology providing six-step current commutation.
2004-03-18 Fairchild ships out MOSFETs in SuperSOT-6 FLMP
Fairchild Semiconductor has introduced its FDC6000NZ dual n-channel MOSFET that combines the company's PowerTrench MOSFET silicon technology with a SuperSOT-6 FLMP.
2002-07-08 Fairchild MOSFETs tuned for 42V automotive-system apps
Fairchild Semiconductor has qualified a line of medium-voltage (60V to 150V) UltraFET Trench MOSFETs for automotive applications to meet AEC Q101 standard.
2004-03-01 Fairchild MOSFETs reduce system power loss
Fairchild Semiconductor has developed two high-voltage MOSFETs that utilize the company's SuperFET technology to reduce system power loss.
2002-07-30 Fairchild MOSFETs offered in BGA packaging
Fairchild Semiconductor has released a dual n-channel and p-channel MOSFETs with physical and electrical performance that make them suitable for Li-ion battery pack protection.
2004-06-14 Fairchild MOSFETs offer benefits of improved fast-switching technology
Fairchild's PowerTrench MOSFET process technology yields low values for Miller Charge, RDS(on) and total gate charge.
2002-05-20 Fairchild MOSFETs eliminate external charge pump circuit
Fairchild Semiconductor has introduced a line of p-channel BGA MOSFETs that eliminate the need for external charge pump circuitry, and are 2.5V/4.5V gate-drive specified.
2006-09-12 Fairchild broadens portfolio of ultracompact MOSFETs
With 11 new MicroFET MOSFET products, Fairchild Semiconductor said it now offers the industry's broadest portfolio of thermally enhanced ultracompact, low-profile devices targeting low-power applications in the <30V and <20V ranges.
2002-05-03 Fairchild 30V MOSFETs pair for high-side, low-side apps
Fairchild Semiconductor has added the FDS6688 to its 30-volt n-channel PowerTrench MOSFET portfolio to provide optimized combined high-side/ low-side switch efficiency in synchronous-rectifier designs.
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