Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > MOSFETs IGBTs

MOSFETs IGBTs Search results

?
?
total search81 articles
2002-01-07 IXYS driver IC controls high-current power MOSFETs, IGBTs
The IXDD415 is a high-speed, HF CMOS MOSFET/IGBT driver IC that has two driver channels, each capable of 15A peak into a capacitive load.
2002-07-25 IXYS chips drive large-volume, midrange MOSFETs, IGBTs
IXYS Corp.'s dual 2A MOSFET/IGBT driver (IXD402) and single 9A device (IXD409) are optimized to drive large-volume, midpower-range IGBTs and MOSFETs with inverting or noninverting configuration.
2013-07-22 Gate Driver IC drives MOSFETs, IGBTs operation up to 600V
IXYS's IX2113 High and Low Side Gate Driver IC boasts a 700V absolute maximum rating, providing additional margin for high voltage applications.
2010-09-21 Demand for power discretes, MOSFETs, IGBTs expected to grow
Growth in power discretes industry expected to drive demand for MOSFETs, IGBTs
2003-06-27 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
This application note discusses the use of Gate Charges to Design the Gate Drive Circuit for Power MOSFETs and IGBTs
2000-05-04 Use gate charge to design the gate drive circuit for power MOSFETs and IGBTs
Designers unfamiliar with MOSFET or IGBT input characteristics begin drive circuit design by determining component values based on the gate-to-source or input capacitance listed on the data sheet. The application note provides gate-charge specifications for power MOSFETs
2014-03-14 ST's SiC MOSFETs enable energy efficient designs
The SCT30N12 allows power supply designers to enhance energy efficiency in applications such as solar inverters and electric vehicles, enterprise computing and industrial motor drives.
2008-06-10 Space-saving photocoupler drives IGBTS, MOSFETS
Toshiba America Electronic Components has announced the TLP700, a driver photocoupler that is optimally suited for direct gate driving of low power IGBTs or power MOSFETs.
2015-02-06 Silicon-carbide power MOSFETs minimise footprint, BOM
The 1.2kV SCT20N120 from ST permits switching frequencies up to three times higher than similar-rated silicon IGBTs, promising improved efficiency and reliability
2003-06-30 Protecting IGBTs and MOSFETs from ESD
This application note discusses how to protect IGBTS and MOSFETs from ESD and how HEXFET users can implement and benefit from similar ESD control programs.
2000-12-01 Protecting IGBTs and MOSFETs from ESD
This application note discusses how HEXFET users can implement and benefit from International Rectifier's ESD control programs.
2001-04-20 Performance comparison of the new generation of IGBTs with MOSFETs at 150kHz
This application note presents data collected from the operation of IGBTs in a hard-switched, double-ended feed forward converter switching at 150kHz. It also makes a comparison between these IGBTs and similarly rated MOSFETs in the same circuit.
2006-05-03 IGBTs reduce power dissipation up to 60
International Rectifier introduced four 600V insulated-gate bipolar transistors that are said to reduce power dissipation in inverters by up to 60 percent.
2008-05-15 IGBTs feature lifetime-control techniques
STMicroelectronics has introduced IGBTs that use efficient lifetime-control techniques to reduce energy loss during turn off
2015-03-04 High-voltage pulse generators make use of SiC MOSFETs
ROHM's SiC MOSFET, allowing for further miniaturisation and greater performance, marks its first application in new ultra high-voltage pulse generators made by Fukushima SiC Applied Engineering Inc.
2013-07-16 650V NPT IGBTs withstand harsh industrial environments
Microsemi's 650V non-punch through insulated bipolar gate transistors are offered in 45A, 70A and 95A current ratings and enable extremely high switching speeds of up to 150kHz.
2007-12-04 300V IGBTs can replace power MOSFETs
A family of 300V insulated IGBTs that can replace power MOSFETs have been introduced by IXYS Corp.
2003-06-27 International Rectifier obtains certifications for Leominster plant
International Rectifier has received AS9100 and ISO9000: 2000 quality management systems certifications for its high reliability (Hi-Rel) manufacturing facility located in Leominster, Massachusetts, U.S.
2008-10-02 Gate drive transformer withstands EMI effects
The SM580 gate drive transformer from Datatronic provides efficient pulse control in gate drive circuits used in MOSFETs and IGBTs for switch mode power supplies and other electronic equipment.
2012-10-03 TI's latest gate driver 40 per cent faster than peers
Texas Instruments' 2.5-A isolated gate driver capable of doubling device lifetime and extending temperature range.
2014-10-02 Optimise power designs with IGBT thermal calculations
Evaluating the temperature of the semiconductor dice in a multi-die package requires additional analytical techniques compared to those applicable for single die. This article shows how to do it properly.
2007-12-17 HVICs deliver improved performance
The latest high-voltage IC technologies are helping engineers address these demands by streamlining the design of the inverter-based variable speed motor drive solutions that are increasingly used in these applications.
2012-07-03 Growth continues for power semiconductor market
Power semiconductor market continues to grow despite facing difficult business climate.
2012-10-17 FOD8316 optocoupler features isolated gate driving
The device is an advanced 2.5A output current IGBT drive optocoupler which aims to cater to the high-power industrial applications demand for a gate driver with high performance and critical protection features.
2013-04-01 Suite targets automated wafer-level parameter testing
Keithley has enhanced its Automated Characterisation Suite (ACS) software that enables automated wafer-level testing of high power semiconductor devices like power MOSFETs, IGBTs, BJTs and diodes.
2011-04-19 Fairchild acquires SiC transistor provider
By acquiring TranSiC, Fairchild gains the company's silicon carbide technology, which will complement its own capabilities in MOSFETs, IGBTs and multichip modules.
2012-10-09 TI announces 2.5A isolated gate driver
The ISO5500 is geared for insulated-gate bipolar transistors and MOSFETs, and claims to be 40 per cent faster than equivalent optical gate drivers
2011-11-22 Power IC market sees 72% CAGR until 2015
IGBTs and MOSFETs are forecast to drive the market to grow from $14.2 billion this year to $16.7 billion in 2013.
2006-02-27 Miniature bipolar package increases power supply efficiency
The ZXTC2045E6 from Zetex Semiconductors produces the drive requirement needed to switch high power MOSFETs and IGBTs in power supply designs.
2015-05-05 IR offers lowest switching, conduction losses (product)
Increasing demands for higher power density, smaller size and flexible systems spur the SMPS industry to continuously design new generations of AC-DC power supplies. IR supports them with SmartRectifier chipsets, primary side control ICs, power factor correction ICs, IGBTs and MOSFETs.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top