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mram What is Magnetoresistive Random Access Memory (MRAM)? Search results

What is Magnetoresistive Random Access Memory (MRAM)?
Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology that has been under development since the 1990s. Continued increases in density of existing memory technologiesnotably flash RAM and DRAMhave kept it in a niche role, but its proponents believe that the advantages are so overwhelming, it will eventually dominate all other types of memory.
MRAM has similar performance to SRAM, similar density of DRAM but much lower power consumption than DRAM, and is much faster and suffers no degradation over time in comparison to flash memory.
Many companies are or have been involved in MRAM development, including the Everspin spin-off from Freescale, Samsung, Hynix, Hitachi, Crocus Technology, Toshiba, NEC, IBM, Infineon, Cypress and Renesas.
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2014-08-27 Understanding STT-MRAM
STT-MRAM can take the place of low-density DRAM and SRAM, especially for mobile and storage devices. But what is it and how does it differ from MRAM?
2004-12-17 TSMC, NEC, Renesas, Toshiba describe novel MRAM cells
At the International Electron Devices Meeting (IEDM) here this week, NEC, Renesas, TSMC and Toshiba are expected to describe competitive cell structures for new and emerging MRAM devices.
2010-10-14 Tower integrates MRAM in 130nm CMOS
Tower Semiconductor has integrated a thermally assisted switching magnetic random access memory from Crocus Technology into its 130nm CMOS manufacturing process.
2011-07-15 Toshiba, Hynix develop MRAM
Hynix and Toshiba are working together to develop spin-transfer torque magnetoresistance random access memory (MRAM).
2012-12-13 Toshiba says MRAM future of mobile processors
The STT-MRAM structure has the lowest power consumption yet reported and is about one-tenth that of prior reported prototypes.
2002-09-24 Toshiba proposes double-junction MRAM structure
Toshiba Corp. has developed a magnetic RAM with a double-tunnel-junction structure to boost its MRAM product density to the 1Gb.
2007-08-22 TDK, IBM form R&D partnership on MRAM
IBM and TDK have announced an R&D partnership focused on high-capacity MRAM technology using the spin momentum transfer effect.
2008-06-27 Samsung, Hynix partner on STT-MRAM
The world's two largest memory chip makers forged an alliance Wednesday to develop next-generation semiconductors so South Korea can stay ahead of foreign rivals, according to an Agence France Presse report.
2003-02-14 Samsung eases into MRAM memory race
Samsung Electronics eased into the race to perfect MRAM devices aimed at tight tolerance apps.
2011-05-19 Russia, Crocus ink $300M MRAM production deal
Under the $300 million deal signed with Rusnano, Crocus will set up a Russian joint venture to manufacture ICs for MRAM using 90nm process technology.
2014-01-02 Research: MRAM tech boosts information storage in electronics
NUS Researchers developed an innovative technology that will drastically increase storage space and enhance memory, which will ensure that fresh data stays intact, even in the case of a power failure.
2006-01-16 Renesas, startup Grandis team on spin torque transfer MRAM
Renesas. and startup Grandis said that they will collaborate to develop magnetic RAM of the 65nm generation using Grandis' spin torque transfer writing technology.
2004-12-20 Renesas develops MRAM technology
Renesas Technology Corp. has developed a high-speed, high-reliability MRAM (magnetoresistive random access memory) technology for SoC (system-on-a-chip) use.
2005-09-02 RAD-HARD 8051 MCU mates with Honeywell MRAM
Silicon Laude launched what's claimed to be the first radiation-hardened and radiation-tolerant MCS8051 instruction-compatible MCUs that can directly interface with Honeywell's new HXNV-0100 64k x 16 radiation-hardened MRAM.
2014-12-29 Optimise system energy consumption with MRAM
Find out whether the fast-write and power-up-to-write times for MRAM can significantly reduce total system energy consumption compared to either EEPROM or Flash.
2003-08-06 NVE tapped by Darpa for MRAM development
NVE Corp. has been signed by the Defense Advanced Research Projects Agency to develop magneto-thermal MRAM devices.
2005-04-21 NVE revises MRAM strategy, plans to push IP
NVE Corp. has revised its strategy in the MRAM market, by saying on Tuesday (April 19) that it has moved towards an intellectual-property (IP) model in the arena.
2004-12-22 NEC, Toshiba develop key technologies for high-density MRAM
NEC Corp. and Toshiba Corp. have announced two key advancements toward development of a magnetoresistive random access memory, a technology seen as key to the development of future generations of high performance mobile equipment.
2011-06-15 NEC, Tohoku University promote CAM-on-MRAM use
The use of magnetic RAM non-volatility with content addressable memories will enable the development of electronics that start instantly and consume zero electricity while in standby mode.
2007-12-11 NEC touts fastest SRAM-compatible MRAM
NEC says it has developed a new SRAM-compatible MRAM that can operate at 250MHz, the world's fastest MRAM operation speed today.
2003-02-17 NEC develops 512KB MRAM
NEC Corp. has announced the development of a 512KB MRAM comprised of a simple CP-type cell structure that enables high-density data storage.
2007-12-04 NEC asserts world's fastest MRAM
NEC claims that its new 'SRAM-compatible MRAM,' which operates at 250MHz, is the world's fastest.
2006-07-18 NEC announces new MRAM cell tech
NEC claims to have succeeded in developing new magnetoresistive RAM cell technology suitable for high-speed memory macro embedded in next-generation system LSIs.
2013-02-26 MRAM, PCM to lead $2B NVM market
The global emerging non-volatile memory market will grow from a value of $209 million in 2012 to $2 billion in 2018, with MRAM and PCM taking the lead.
2006-08-16 MRAM ushers in era of new memory tech
For the past 11 years, Saied Tehrani and the MRAM development team he directs at Freescale Semiconductor's Arizona facility have worked on a new type of IC memoryone using magnetic resistance instead of charge storage.
2007-05-01 MRAM puts new spin on process, fab strategy
According to Freescale, the major advantage of its MRAM technology is that it is a back-end addition to conventional CMOS and is therefore suitable for embedded use. The Freescale MRAM cell has multilayer MTJs placed diagonally between two high-current write line conductors, which are formed in metal 4 and metal 5, and arranged at right angles to each other.
2014-04-23 MRAM plots a 50 per cent CAGR increase
In addition to its non-volatile appeal, the growth is seen to be driven by power savings from storing data using magnetic element, yielding $246.3 million by 2019.
2006-10-16 MRAM joins memory market
With comparative advantages over other memory options, magnetoresistive RAM is expected to be the 'universal memory' of the future.
2008-04-16 MRAM is fit for space mission
Headed for orbit with the launch of Japan Aerospace Exploration Agency's SpriteSat is MRAM technology, taking the place of both SRAM and flash memory.
2008-04-02 MRAM gets spot in Siemens touchscreen HMI
Siemens has developed an industrial touchscreen HMI application using MRAM technology supplied by Freescale Semiconductor.
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