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What is NAND flash?
Flash memory chips are constructed of either NOR or NAND gates. Developed by Toshiba, NAND flash works like a disk rather than memory. It has faster erase and write times, higher density, and lower cost per bit than NOR flash, and ten times the endurance. However, its I/O interface allows only sequential access to data, which makes it suitable for mass-storage devices and somewhat less useful for computer memory.
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2008-06-23 Will Seagate buy Intel's stake in IM Flash
Seagate Technology could be a potential buyer of Intel Corp.'s stake in IM Flash Technologies LLC, the chip giant's joint NAND flash-memory venture with Micron Technology Inc., according to an analyst.
2012-09-21 Why GigaDevice gambles on NOR flash memory
China fabless firm GigaDevice is staying put in the NOR flash market even if the industry proves challenging for sales growth and expansion
2013-04-30 Why flash storage is important to MEMS
Solid state drives operate at higher temperatures, and MEMS devices can withstand that environment because they regulate themselves.
2008-05-16 What's the best flash memory flavor for your design
The embedded systems industry has been waiting for "universal memory" to come along. This article discusses the various flavors of NAND and NOR flash memory that may be the suitable to your design needs.
2015-06-23 What's inside 1Xnm planar NAND
Double patterning has become mandatory for making the 16nm node NAND flash and the memory makers use a self-aligned double patterning for the active, control gate, floating gate and bitline patterning.
2008-06-30 What types of ECC should be used on flash memory
NOR flash normally does not need error-correcting code (ECC). On the other hand, NAND requires ECC to ensure data integrity. NAND flash includes extra storage on each page to store ECC code as well as other information for wear leveling, logical to physical block mapping, and other software overhead functions.
2002-08-14 WEDC ships Flash disk modules in SO-DIMM packages
The WED7GxxxATA33 DimmDrive single-chip Flash disk module has densities ranging from 16MB to 768MB in 144-pin SO-DIMM packages
2009-06-09 Wear-leveling techniques in NAND flash devices
Wear leveling is a process that helps reduce premature wear in NAND flash devices. This application note highlights the importance of wear leveling, explains two primary wear-leveling techniquesstatic and dynamicand calls attention to other considerations involved in implementing wear leveling.
2004-11-29 Wear leveling in single level cell NAND flash memories
This app note describes the wear leveling algorithm that STMicro recommends to implement in the flash translation layer (FTL) software for NAND flash memories.
2012-04-24 Weak demand pulls NAND flash contract price
Demand momentum for the memory device was weak since the start of the slow season, with contact price falling by 4-8 percent, noted DRAMeXchange.
2006-09-18 Vendors push for flash, HDD coexistence
HDD and NAND flash vendors have agreed on a peaceful coexistence, claiming that the two technologies are complementary and emphasizing the need to select the one most appropriate for a particular application.
2005-07-01 Using multilevel cell NAND flash technology in consumer applications
Multilevel cell NAND flash memories surpass data-storage performance requirements in today's digital consumer applications
2008-05-07 Using Micron MT29F2G08AACWP NAND flash memory in Toshiba TC58NVG1S3BTG00 apps
This technical note compares the third-generation 2Gbit Micron NAND flash device with 2Gbit Toshiba device TC58NVG1S3BTG00.
2009-03-02 Using Copyback operations to maintain data integrity in NAND flash devices
Copyback operations, which are sometimes referred to as Internal Data Move operations, play a key role in maintaining data integrity in the NAND flash device.
2012-05-03 Use FPGAs to harness potential of flash for enterprise apps
The design challenges associated with flash are readily addressed via deployment of FPGA-based PSM for memory management and I/O
2007-05-09 UMC gears up for CPUs, NAND flash memory
United Microelectronics Corp. said it is in talks on a CPU production deal, but it is being circumspect on how it will attack the high-volume flash memory market
2012-04-24 Ultrabooks to benefit global NAND flash market
According to IHS, NAND flash memory market is expected to achieve eight percent growth this year because of major sales drivers such as solid-state-drive equipped ultrabooks.
2006-12-04 TSMC, SMIC increase flash efforts
TSMC and SMIC are reportedly increasing their efforts to raise their flash memory market shares
2007-06-04 Triumvirate heralds use of flash in PCs, works on standard
The use of flash in notebooks and desktops has received a boost with Dell, Intel and Microsoft collaborating on a standard for NAND flash module controllers.
2009-05-08 Trio to co-develop NAND controllers
Hynix Semiconductor Inc, Numonyx B.V. and Phison Electronics Corp. have signed a collaboration agreement to jointly develop controllers for the next generation of managed-NAND solutions based on the newly released JEDEC eMMC 4.4 industry specification
2002-06-22 Transcend equips USB Flash drives with security features
Transcend Information Inc. has announced that it has equipped its line of JetFlash USB Flash drives with password protection and a write protect switch to ensure the privacy and retention of sensitive information
2011-04-26 Toshiba-SanDisk overtake Intel-Micron in NAND process race
Outpacing the Intel-Micron duo, Toshiba and SanDisk have fabricated 2bit-per-cell, 64Gb NAND flash memory chips with 19nm process technology, thus enabling 8GB on a single chip.
2003-12-05 Toshiba, SanDisk to expand NAND flash memory production
Toshiba Corp. and SanDisk Corp. have agreed to cooperate in the construction of a new 300mm wafer fab facility at Toshiba's Yokkaichi operations.
2006-02-13 Toshiba, SanDisk to boost spending on flash fab
In an effort to keep up with huge demand for its NAND flash-memory devices, SanDisk and Toshiba said that they plan to boost the investment and production levels of its 300mm fab venture in Japan.
2007-03-01 Toshiba, SanDisk ship 'highest-density' NAND
Toshiba co-developed with SanDisk a 16Gbit NAND flash memory fabricated in 56nm process technology, said to be the highest-density single-chip NAND flash memory yet achieved.
2006-07-14 Toshiba, SanDisk name flash-memory JV
Moving to expand its ties, Toshiba and SanDisk blessed and gave a new name its previously-announced NAND flash-memory fab venture.
2004-04-16 Toshiba, SanDisk expand 300mm NAND fab plan
Toshiba Corp. said it expects the final capacity of its planned 300mm NAND memory fab to be about 37,500 wafers a month, 1.5 times larger than the original plan announced in last December
2003-06-13 Toshiba, SanDisk co-develop NAND cell architecture
Toshiba and SanDisk have announced the development of a high density NAND flash memory cell structure that allows fabrication of 4Gb NAND flash devices.
2002-02-07 Toshiba, Samsung show 1Gb Flash designs
Serial Flash reached the gigabit density at the International Solid-State Circuits Conference, where Toshiba Corp. and Samsung Electronics Co. Ltd each described 1Gb NAND Flash designs on Monday (Feb. 4).
2012-07-26 Toshiba's NAND flash cuts increases market morale
Toshiba's temporary capacity reduction will benefit the oversupply situation in the third quarter as well as rally NAND flash industry confidence needed to help stabilize market price.
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