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What is NAND flash?
Flash memory chips are constructed of either NOR or NAND gates. Developed by Toshiba, NAND flash works like a disk rather than memory. It has faster erase and write times, higher density, and lower cost per bit than NOR flash, and ten times the endurance. However, its I/O interface allows only sequential access to data, which makes it suitable for mass-storage devices and somewhat less useful for computer memory.
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2008-10-30 Toshiba readies 43nm SLC NAND flash
Toshiba has developed a new line-up of 43nm single-level cell NAND flash memory products available in densities ranging from 512Mbit to 64Gbit.
2009-05-04 Toshiba ramps up 32nm NAND production
Toshiba Corp. is accelerating the production of its NAND flash memory products, based on its long-awaited, 32nm process technology.
2007-04-18 Toshiba pins growth plans on NAND, OLED expansion
Toshiba Corp. revealed that its mid-term strategy includes bullish plans to expand sales, expansion of NAND flash memory development and a commitment to OLED displays for TV applications.
2007-01-10 Toshiba offers four NAND flash solutions
To address the rapidly growing market for embedded flash solutions in consumer electronics and other handheld systems, TAEC is rolling out four embedded NAND solutions.
2006-08-09 Toshiba mixes LBA to NAND flash memory
TAEC and Toshiba Corp. have brought logical block addressing (LBA) to NAND flash memory and is launching LBA-NAND.
2003-02-20 Toshiba microcontroller has 32KB of NAND Flash
The TMP86FM48 8-bit microcontroller from Toshiba Corp. combines the TLCS-870/C CPU core with 32KB of NAND-type Flash memory.
2006-05-19 Toshiba gained NAND share in 1Q
Toshiba tightened its grip on the No. 2 spot in NAND flash memory during Q1, increasing its market share by 5.4 percent, according to iSuppli.
2015-04-02 Toshiba flexes muscle in 3D NAND arena
The transition to 3D NAND is picking up speed as Toshiba announced in late March that it was shipping samples of its 48-layer 3D Bit Cost Scalable (BiCS) stacked cell structure flash.
2007-06-14 Toshiba develops tech for next-gen NAND flash
Toshiba Corp. has developed a technology that can meet the future demand for higher density NAND flash memory.
2008-02-11 Toshiba develops 16Gbit NAND at 43nm CMOS tech
Toshiba has developed a 16Gbit NAND flash memory chip fabricated with 43nm process co-developed with SanDisk.
2007-12-14 Toshiba debuts SSDs with MLC NAND flash
Toshiba and TAEC announced their entry into the emerging market for NAND-flash-based solid-state drives with a series of products featuring multi-level cell (MLC) NAND flash memory.
2006-05-18 Toshiba capex plan will double NAND flash output
Toshiba unveiled plans to invest about $18B over the three years with half of the expenditures allocated for semiconductors, mainly on expanding production of NAND flash memory.
2012-07-25 Toshiba adjusts NAND flash memory production at Yokkaichi
Toshiba has adjusted its NAND flash memory production, cutting the company's production by 30 percent.
2012-10-05 Tight supply ups NAND flash contract price
DRAMeXchange revealed that due to tightening supply and Q4 restocking demand for smartphones and tablets, 2HSep. mainstream NAND flash contract prices have increased by about 7.5-11 per cent.
2008-08-19 The worst, best of times for NAND
The NAND flash memory market is still seeing a horrific downturn, as the industry is saddled with too much capacity. But over time, there is a need for 10 more megafabs in the market to keep up with emerging demand for NAND, according to the top executive of SanDisk Corp.
2008-05-16 Take your pick of NAND implementation
When considering the combination of requirements for a system's NAND budget, designers have several NAND implementation options, each with its own benefits and disadvantages.
2010-07-02 Taiwan vendors form NAND flash R&D consortium
Previously rejected as a suitable case for government investment as a DRAM company, Taiwan Innovation Memory Co. has reinvented itself as a NAND flash supplier.
2010-07-23 Taiwan maker demonstrates 3D vertical gate NAND device
The 3D NAND Flash uses Macronix's patented BE-SONOS (barrier engineering) charge-trapping technology and 3D decoding architecture.
2006-08-25 Taiwan eyes NAND flash market
Taiwan appears to be moving towards a safer flash foundry strategy, in which DRAM makers would make parts for other companies.
2003-08-25 TAEC publishes NAND flash apps design guide
Toshiba America Electronic Components Inc. has arrived with a comprehensive NAND flash design guide for engineers.
2003-07-10 TAEC expands NAND Flash design for mobile apps
Toshiba America Electronic Components Inc. (TAEC), together with its parent company Toshiba Corp., has announced a wider NAND flash memory configuration.
2011-03-17 Supply worries trigger NAND flash price hike
Spot prices for NAND flash memories rose between 10 and 20 percent on March 14, due to concerns that supplies could be constrained following loss of electricity at some fabs.
2009-08-14 Sun's Cornwell: NAND is moving to litho death march
A Sun Microsystems Inc. technologist scolded the NAND flash industry, saying vendors are ignoring the needs of the enterprise and moving towards the "lithography death march."
2015-08-31 Storage array packs 3D NAND drives
By supporting 3D TLC SSDs, Kaminario's K2 v5.5 customers can double the effective capacity of the array to more than 360TB per K-block and scale one K2 array to multiple petabytes in a single rack unit.
2004-04-02 STMicro mass produces 1Gb, 512Mb NAND Flash devices
STMicroelectronics has announced the volume production of its 1Gb and 512Mb NAND Flash memory products.
2014-08-21 Startup banks on triple-level cell NAND advantage
NxGnData hopes to grab the opportunities for technology that puts computational tasks closer to where data resides while also seeing a role for TLC NAND in the enterprise as "cold storage."
2016-04-12 Stackable NOR, NAND flash suitable for apps, IoT
The mixing and stacking capabilities of Winbond's SpiStack provide designers with flexibility to meet needs for a variety of small machine-to-machine (M2M) and IoT devices.
2004-12-09 ST unveils VFBGA55 version of Small Page NAND Flash memory chip
STMicroelectronics announced volume production of the VFBGA55 version of its 256Mb 'Small Page' NAND flash memory chip.
2005-09-02 ST shifts 128Mb NAND flash memory to 90nm process technology
STMicroelectronics announced that production of its 128Mb NAND flash devicethe NAND128W3A2BN6Ehas been transferred to 90nm process technology.
2006-12-06 ST completes NAND flash transition to 70nm
STMicroelectronics announced full availability of its entire NAND Flash memory family in 70nm process technology.
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