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What is RAM?

Random access memory or RAM is a group of memory chips, which serve as the computer's primary workspace. RAM also denotes a read/write memory.

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2011-02-25	Samsung chief discusses what's limiting PRAM adoption Samsung's CEO admits that systems houses have been reluctant to adopt next-generation memory types in mass quantities because they are not compatible with today's technology.
2006-09-13	Samsung unveils working PRAM prototype Samsung announced it has completed the industry's first fully working prototype of a 512Mbit PRAM, which the company claims is expected to become the main memory device to replace high-density NOR flash memories within the next decade.
2003-06-26	PRAM poised to re-enter memory race Phase-change RAM, also known as ovonic or chalcogenide memory, appears to have gotten a new lease on life.
2007-10-02	Hynix, Ovonyx ink PRAM cross-licensing deal Hynix Semiconductor has entered into a cross-licensing deal with Ovonyx to develop PRAM chips using the latter's patented technology.
2007-10-24	Collaboration by Elpida, UMC to boost low-k, PRAM Japan's Elpida Memory has formed a joint development program with Taiwan's UMC for copper low-k and PRAM.
2010-05-04	512Mbit PRAM comes in multi-chip package Samsung Electronics Co. Ltd has begun shipping what it claims is the first multi-chip package (MCP) with phase-change RAM (PRAM) for use in mobile handsets beginning later this quarter.
2007-01-01	Korea's electronics sector awaits solid year Prospects are bright for Korea's electronics industry in 2007.
2015-06-23	KAIST team creates first flexible phase-change RAM The research team developed a low-power non-volatile PRAM for flexible and wearable memories enabled by self-assembled BCP silica nanostructures and self-structured conductive filament nanoheater.
2006-05-16	Advanced memories still struggle in mobiles Memory research managers themselves have scaled back their rhetoric in the past, avoiding the term universal memory altogether. Freescale, Intel and Texas Instruments are dealing with memory designs.
2010-04-16	When will memristors be ready for prime time? While memristors represent a potential revolution in electronic-circuit theory akin to the invention of the transistor, it will take a killer application to get it off the ground.
2014-08-01	Testing resistive memory devices In this instalment, we will address issues related to characterisation and forming, as well as endurance testing for 1R ReRAM structures.
2009-02-11	Startup readies RRAMs for mass production Australian startup 4DS Inc. claims to have made a major breakthrough in resistive RAM (RRAM) technology.
2009-09-25	Samsung gears phase-change RAM for mobiles Samsung has begun production of a 512Mbit phase-change RAM and is aiming it at mobile phone handsets and other battery-operated applications.
2011-02-24	Samsung chief cites challenges facing IC design IC designers must address power consumption issues, the need for new transistor structure and memory types, delayed development of 3D TSV-based devices, and calls for circuit design breakthroughs.
2012-05-28	PCM progress report no. 7: A look at Samsung's 8-Gb array Here's a discussion on the features of Samsung's 8-Gb array.
2012-03-01	PCM progress report no. 6: Recent advances in phase change memory (Part 1) This series looks at some of the most recent phase change memory developments. Part 1 reviews structural and materials advances, focusing on both benefits and challenges.
2012-02-23	PCM progress report no. 5: Scaling issues Learn about the possible approaches to achieve the scaling necessary to make PCM a commercial success.
2011-04-11	PCM progress report no. 2: Review of PCM-related activities in early 2011 In this report, the author explores the PCM-related activities over the first quarter of 2011.
2010-12-03	PCM die found in mobile phone UBM TechInsights reports it has found a phase-change memory die inside a Samsung handset.
2007-02-01	Next-gen memory market up for grabs The frantic search for a next-generation memory technology took center stage at the IEEE International Electron Devices Meeting in December, amid growing concerns that DRAM and flash parts will no longer scale in the near future.
2014-04-23	MRAM plots a 50 per cent CAGR increase In addition to its non-volatile appeal, the growth is seen to be driven by power savings from storing data using magnetic element, yielding $246.3 million by 2019.
2015-05-05	MLC PCM leapfrogs resistance drift, temperature hurdles Researchers at IBM have found a way to tackle the phenomenon of resistance drift and the impact of temperature, which has been a barrier to multilevel-cell phase-change memory.
2008-10-01	Memristors transit to reality Hewlett-Packard Labs is attempting to catapult the memristor, the fourth passive circuit element after resistors, capacitors and inductors, into the electronics mainstream.
2012-11-21	Memory to make a splash at ISSCC 2013 Non-traditional memory architectures could steal the show from more structured analytical papers to be presented at the International Solid State Circuits Conference.
2008-01-18	Memory takes on multicore approach Joseph Ashwood claims he has created a memory chip architecture for the 21st century—one that matches multicore microprocessors with parallel, concurrent access to multiple memory chips.
2007-08-16	Managing embedded memory at 45nm Embedded designers will face major challenges associated with embedded memory at or around the 45nm technology node. Industry leaders have already declared that conventional SRAM, flash and DRAM will encounter scalability and endurance issues at those feature sizes.
2012-12-18	Impact of crystal electrodes on PCM (Part 2) Here's a review of the published ETDR results to see whether the seeded-bridge model holds true.
2010-12-09	ICs seen to scale via 3D TSV Chip scaling is becoming harder and costlier entering into the sub-20nm realm, thus, the industry is looking for new materials, structures and processes, says a technologist from Samsung.
2007-06-20	Freescale unveils first military-temperature MRAMs Freescale Semiconducutor Inc. has announced the first Mil-spec extended-temperature-range magnetic RAMs (MRAMs), providing the last piece of the puzzle for the potential customers who have funded much of the memory category's development.
2010-07-30	Analysis: a rebuttal of Micron's paper on phase-change memory Former editor-in-chief of Electronic Engineering Ronald Neale questions the views of Micron's Greg Atwood on phase-change memory.