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What is RAM?
Random access memory or RAM is a group of memory chips, which serve as the computer's primary workspace. RAM also denotes a read/write memory.
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2002-06-26 Simtek receives first silicon from Amkor
Simtek Corp. has received its first silicon-oxide-nitride-oxide-silicon from Amkor Technology Inc. as part of their development, licensing and product agreement.
2010-09-06 Silicon ReRAM beats graphene, say Rice researchers
Rice University researchers demonstrated a proof-of-concept 1Kb silicon ReRAM that they claim can be scaled beyond the densities of flash.
2002-01-02 Sharp stacked CSP memory boasts 200Mb capacity
The company has developed a four-chip stacked CSP memory device that integrates two 64Mb NOR Flash memory chips, a 64Mb RAM and an 8Mb low-power SRAM into a single package.
2002-11-11 Sharp composite memory targets next-gen cellphone apps
The company has developed a composite memory device with a capacity of 320Mb that is housed in a three-chip stacked CSP.
2004-10-29 Sharp begins shipping IC modules to Australia for e-passports
Responding to a fast-approaching deadline by the U.S. Dept. of Homeland Security for global deployment of electronically readable visas, Japan's Sharp Corp. has begun volume shipments of its large-capacity contactless IC module to the Australian government, which recently began an e-passport pilot program.
2007-02-05 SH7641 MCU: Output of three-phase complementary PWM signals
This article describes a sample task in which PWM waveforms in three-phases are output along with corresponding inverse waveforms that include non-overlapping sections.
2013-08-14 Selecting low-power MCUs by the numbers
Learn how to evaluate an MCU's low-power operation by considering current consumption, state retention, wake-up time, and other power usage.
2012-11-12 Seeing beneath Microsoft Surface
In this teardown, iFixit has exposed the innards of Microsoft's run at the iPad.
2008-06-27 Samsung, Hynix partner on STT-MRAM
The world's two largest memory chip makers forged an alliance Wednesday to develop next-generation semiconductors so South Korea can stay ahead of foreign rivals, according to an Agence France Presse report.
2002-06-16 Samsung unleashes low-latency 'network DRAM'
After a run of unexplained obliqueness about its low-latency DRAMs, Samsung has officially rolled out its "network DRAM," based on licensed IP developed for fast-cycle RAMs by Fujitsu and Toshiba.
2002-10-25 Samsung ships 4Mb FRAM for mobile apps
Samsung Electronics Co. Ltd has announced the availability of a 4Mb FRAM that combines nonvolatile memory technology with the performance of SRAMs and DRAMs.
2002-04-30 Samsung mobile SDRAM operates from 2.5V source
The K4S51163LC 512Mb SDRAM from Samsung Electronics Co. Ltd operates from a 2.5V sourcelower than the 3.3V supply needed by conventional SDRAMs and is designed for 3G mobile handsets, PDAs, and digital cameras.
2002-07-18 Samsung introduces 1GHz graphics SDRAM
Samsung Electronics Co. Ltd has introduced what it claims to be the industry's first graphics memory chip on DDR II spec and boasts of a data transmission rate >1GHz.
2003-02-14 Samsung eases into MRAM memory race
Samsung Electronics eased into the race to perfect MRAM devices aimed at tight tolerance apps.
2002-01-15 Samsung develops 0.115m low-power SRAM
Claiming to be months ahead of competitors, Samsung Electronics Co. Ltd said it has developed the world's smallest low-power 32Mb SRAM, which will target next-generation mobile phones.
2014-02-14 Rise in IoT breeds new type of embedded memory
Resistive RAM (RRAM) technology claims to provide the cost competitiveness needed for consumer electronics, home appliances, wireless sensors networks and even disposable electronics.
2007-02-05 Rewriting flash memory in user program mode using asynchronous serial communication
This article describes how data to be rewritten in the flash memory on the master side is written to the flash memory on the slave side, and how data to be rewritten is transferred using asynchronous serial communication.
2002-01-18 Researchers pursue post-PC future at HP Labs
A cadre of engineers at HP Labs are driving a handful of weighty projects forward, aligned with a broad vision of where parent company Hewlett-Packard Co. and the computer industry are headed.
2012-09-28 ReRAM in 28nm logic process piques TSMC's interest
A research team from National Tsing-Hua University found that a contact RRAM (CRRAM) cell has been realised in a HKMG 28-nm CMOS logic process without the use of any additional masking or process steps.
2006-01-16 Renesas, startup Grandis team on spin torque transfer MRAM
Renesas. and startup Grandis said that they will collaborate to develop magnetic RAM of the 65nm generation using Grandis' spin torque transfer writing technology.
2002-04-01 Reducing fault-coverage analysis with DFT, Part 2
This technical paper is the second of a two-part discussion wherein the author considers fault-coverage analysis and simulation for full-scan testing of ASIC designs.
2002-03-16 Reducing fault-coverage analysis with DFT
This technical article is the first of two parts that considers how fault-coverage analysis and simulation for full scan testing of ASIC designs are equally applicable to other types of IC design, chiefly of which are FPGAs.
2005-01-03 Real-time video capture needs more mem power
Handsets shuffle voluminous amounts of media between processor and memory subsystem, creating a power hot spot in memory.
2003-08-08 Ramtron FRAM runs up to 20MHz
Ramtron International has introduced what it claims is the first FRAM built using 0.35?m design rules.
2002-02-05 Ramtron FRAM offers 20MHz R/W speed
Claimed to be able to read and write continuously at 20MHz, the FM25CL64 SPI FRAM can outperform similar EEPROMS that require 10MHz and 10ms delays to read and write.
2002-04-01 Ramtron FRAM boasts 10 billion write cycles
The FM30C256 FRAM is claimed to read and write continuously at bus speeds of up to 1MHz at 10 billion-cycle endurancefaster than the 1 million write cycle of similar EEPROM devices.
2009-05-11 Ramtron cuts foundry ties with Fujitsu
Amid loss, ferroelectric RAM maker Ramtron International Corp. is dumping one of its foundry partners&$8212;Fujitsu Ltd.
2006-10-12 Ramtron combines FRAM and RTC in one tiny chip
Ramtron's new FM3130 is billed as a 64Kbit 3V FRAM-enhanced processor companion device that combines the benefits of nonvolatile FRAM with an integrated real-time clock/calendar in one tiny package.
2007-03-14 Ramtron brings FRAM to masses with TI's aid
Ramtron is hoping that the two-pronged offensive it is launching will help FRAM gain traction in more mainstream applications.
2004-04-14 Ramtron agrees pay $2.5 million to settle patent dispute
Ramtron Int. Corp. has settled a ferroelectric RAM cell patent dispute with National Semiconductor Corp. that has dragged on since 1991.
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