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2008-06-24 Transistors remit high peak power for wireless net
Infineon Technologies AG recently launched a new family of RF power transistors specifically targeted at wireless infrastructure applications in the 700MHz frequency band
2008-04-21 Transistor assures peak power for UHF broadcasts
Freescale Semiconductor Inc. has introduced a 50V laterally diffused MOS (LDMOS) RF power transistor, which the company says is designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.
2008-12-23 Rugged RF power transistor released
HVVi Semiconductors Inc. has released the company's first product for radar applications in the UHF band that uses its High Voltage Vertical Field Effect Transistor architecture. Operating across the 420-470MHz band, the HVV0405-175 is a fully qualified 175W RF power transistor optimized for gain and ruggedness.
2007-05-22 RF transistor suits WiMAX applications
Nitronex Corp. has developed a 28V, 100W GaN high electron mobility transistor (HEMT) for WiMAX applications
2007-10-19 RF power transistors suit broadcast, ISM markets
Freescale has rolled out new RF power transistors based on its VHV6 50V LDMOS technology, which is claimed to be the first 50V LDMOS technology introduced for broadcast and ISM markets
2008-04-07 RF power transistors eye 2.5-2.7GHz WiMAX
Infineon Technologies AG has released two new LDMOS RF power transistors targeting wireless infrastructure applications such as WiMAX in the 2.5-2.7GHz frequency band
2013-06-10 RF power transistors aimed at 2.45GHz ISM band
The devices are based on NXP's latest 28V LDMOS processes and all feature NXP's field-proven ruggedness, manufacturing consistency and long-term reliability.
2011-06-14 RF power transistor delivers 60MHz
NXP has launched Gen8 RF power transistors that are designed for wireless base stations and can deliver signal bandwidths of up to 60MHz
2009-08-31 RF power devices tip flexibility for TD-SCDMA
Freescale Semiconductor has introduced two final-stage LDMOS RF power transistors for TD-SCDMA networks
2004-06-14 RF LDMOS transistor family just right for 2.5G, 3G wireless infrastructure
Freescale Semiconductor added sixth-generation RF products to its line of LDMOS power transistors for 2.5G and 3G wireless infrastructure apps
2009-09-24 Power transistor streamlines UHF transmitter design
Freescale Semiconductor's new RF power transistor demonstrates industry-leading RF figures of merit.
2012-06-25 Power transistor ideal for radar architectures
RFMD' RFHA1025 pulsed GaN RF matched power transistor operates at the 0.96GHz to 1.2GHz frequency range to deliver 280W pulsed power.
2010-09-28 LDMOS UHF transistor capable of 120W DVB-T output
NXP Semiconductors says BLF888A is "most powerful" LDMOS broadcast transistor
2008-11-26 LDMOS transistor delivers 500W RF output power
NXP Semiconductors has released its latest LDMOS transistor for L-band radar applications that delivers RF output power of 500W at frequencies between 1.2GHz and 1.4GHz.
2008-03-07 LDMOS RF power transistors eye China market
A portfolio of RF power transistors based on LDMOS technology has been launched by TriQuint Semiconductor for China
2007-06-06 LDMOS RF power transistor delivers 1kW output
Freescale Semiconductor unveiled what it claims as the highest power LDMOS RF power transistor, the MRF6VP11KH that delivers pulsed RF output power of 1kW at 130MHz.
2014-02-17 GAn-on-SiC based HEMT pushes power at 150W
Using wafer fabrication processes, the HEMTs provide gain, efficiency, bandwidth and ruggedness over several bandwidth ranges.
2006-07-12 GaN RF power transistor delivers 400W
Cree announced its new high-power gallium nitride RF power transistor for mobile WiMAX applications produces a record 400W of peak pulsed RF power at 3.3GHz.
2005-04-26 Freescale RF power transistor cuts operating expenses
Freescale's new RF power transistor is designed to reduce transmitter power consumption and operating costs for digital and analog television broadcast apps.
2008-06-05 Freescale debuts 50V LDMOS power transistors for L-Band
Freescale Semiconductor has unveiled the world's first 50V LDMOS RF power transistor for L-Band radar applications.
2006-10-10 Discrete RF power transistors target WiMAX market
Nitronex unveiled the first three members of its family of discrete RF power transistors, based on the company's gallium nitride technology
2010-11-11 75W GaN RF transistor delivers high peak efficiency
RF Micro Devices says GaN RF delivers superior performance ersus competing GaAs and silicon power technologies
2002-01-24 Xicor, Motorola collaborate on Smart Biasing for RF PAs
Xicor Inc. has teamed up with Motorola to provide RF power amplifier (PA) reference platforms for GSM, EDGE and W-CDMA cellular base station applications
2007-06-01 Transistor manages 300W over full UHF band
NXP's BLF878, said to be the first true 300W UHF transistor in high voltage generation 6 LDMOS, promises to deliver 300W over the full UHF band with high linearity and ruggedness
2001-04-20 Simple and inexpensive high-efficiency power amplifier using new APT MOSFETs
This application note describes a simple and inexpensive high-efficiency RF power amplifier based on Advanced Power Technology's RF power MOSFETs
2007-03-05 RFICs deliver 100W RF output for GSM, EDGE
Freescale has released two-stage RFICs capable of delivering the 100W RF output power required for GSM and EDGE network base stations
2010-11-18 RF power transistors tout ruggedness, affordability
Freescale launches RF power transistors for industrial and commercial aerospace applications
2007-03-01 Power transistor touts 'highest' performance level
The new power transistor from Renesas is for use in products operating in the 5GHz and 2.4GHz bands, such as WLAN terminals, digital cordless phones and RF tag readers/writers.
2006-11-29 Power amp loads 20mW for weak signal amplification
New Japan Radio has announced the NJM2278, a 20mW power amplifier designed for use in the transmitters of specific extremely low-power radio equipment using weak signals in the 300/400MHz bandwidth
2002-12-20 NEC nitride power transistor delivers 2.3W output
NEC has developed a nitride semiconductor power transistor capable of 2.3W power amplification in the sub-millimeter band (30GHz
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