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2010-09-06 Silicon ReRAM beats graphene, say Rice researchers
Rice University researchers demonstrated a proof-of-concept 1Kb silicon ReRAM that they claim can be scaled beyond the densities of flash.
2013-04-09 SanDisk will only switch to EUV for ReRAM
The storage memory supplier does not expect to use extreme ultraviolet lithography for its current NAND process.
2012-09-28 ReRAM in 28nm logic process piques TSMC's interest
A research team from National Tsing-Hua University found that a contact RRAM (CRRAM) cell has been realised in a HKMG 28-nm CMOS logic process without the use of any additional masking or process steps.
2015-10-26 More info on FinFET ReRAM unveiled
A full paper is due to be presented on a 1Kb memory array of devices using a 16nm logic FinFET manufacturing process at this year's IEDM coming up in December.
2014-03-06 A detailed look at Micron-Sony's 16Gb ReRAM
The ReRAM used CuTe as the active memory material where in a CbRAM cell the growth and removal of a Cu filament link through an adjacent thin insulator to a lower electrode yields two NV logic states.
2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2014-08-01 Testing resistive memory devices
In this instalment, we will address issues related to characterisation and forming, as well as endurance testing for 1R ReRAM structures.
2013-10-03 Spray-based carbon nanotubes used to create low cost sensors
A team of researchers from the Technische Universit?t Mnchen recently fabricated a gas detection sensor on a flexible polymer substrate.
2013-12-11 Recognizing the issues with phase change memory
There are about half a dozen papers on phase change memory (PCM) devices at IEDM 2013, and most deal with known reliability problems associated with PCM.
2014-06-09 Phase change memory: Multi-level to multi-tasking
In the VLSI 2014 paper, a 4bit per cell will be presented, the equivalent of 16 levels. It is conceivable that such a memory could operate in a multi-tasking role serving two separate applications.
2013-02-26 MRAM, PCM to lead $2B NVM market
The global emerging non-volatile memory market will grow from a value of $209 million in 2012 to $2 billion in 2018, with MRAM and PCM taking the lead.
2012-09-28 Memresistor debut pushed back to late 2013
HP and SK-Hynix decision to delay the memresistor was primarily due to its potential to cannibalise existing flash memory business.
2012-11-21 Memory to make a splash at ISSCC 2013
Non-traditional memory architectures could steal the show from more structured analytical papers to be presented at the International Solid State Circuits Conference.
2015-07-30 Intel, Micron unleash novel non-volatile memory
The executives said the memory is based on a fundamental discovery that has yielded a non-volatile memory that exhibits a "bulk material property change" at the cross-point of metal access lines.
2013-01-17 IC firms promising memristive microchips as early as 2013
Memristors mimic the process flow of the human brain thereby making it a solid architectural foundation for a new era of cognitive computers.
2014-07-24 Fundamentals of resistive memory devices
In this article, we address the basics of resistive random access memory(ReRAM) structures, as well as the test hardware available to characterise them.
2014-05-14 Assessing correlated electron memory claims by 4DS
4DS Inc. now claims that the operation of its memory is based on strongly correlated electron-effect Mott-like transition.
2016-04-11 Probing ReRAMs: Forming scaling, quantised conductance
Learn about the new ReRAM challenges as an IMEC team have formed and characterised the electrical conductance and topology of some of the smallest ReRAM filaments ever reported.
2014-06-30 NV memory: Significance of filament size and shape
Many presenters in VLSI 2014 are seeking to improve performance and increase the understanding of ReRAM/RRAM operation. However, there is still no clear winner when it comes to material or memory type.
2012-06-14 IBM, SK Hynix team up in memory tech
SK Hynix is now covering three bets on future memory technology with agreements in place with Toshiba on magnetic RAM, with Hewlett-Packard Co. on resistive RAM (ReRAM), and with IBM on PCRAM.
2010-09-02 HP, Hynix push memristor commercialization
HP and Hynix have forged a joint development agreement to develop materials and process integration technology to shift memristors from R&D to commercial resistive RAM (ReRAM).
2011-01-20 Tokyo University designs NVM architecture using Docea's Aceplorer
By using Docea Power's Aceplorer software to model power consumption at the ESL, University of Tokyo's Takeuchi Laboratory hopes to evaluate the optimum NVL architecture design and share power consumption data with system architects.
2011-02-25 Samsung chief discusses what's limiting PRAM adoption
Samsung's CEO admits that systems houses have been reluctant to adopt next-generation memory types in mass quantities because they are not compatible with today's technology.
2011-02-24 Samsung chief cites challenges facing IC design
IC designers must address power consumption issues, the need for new transistor structure and memory types, delayed development of 3D TSV-based devices, and calls for circuit design breakthroughs.
2012-04-11 Resistive RAM based on silicon dioxide
Researchers have developed a resistive-switching memory device based on silicon dioxide that shows a simpler material structure compared to those using metal-oxide films.
2015-12-24 Recent revelations on non-volatile memory conduction
There is a continuing work at IBM Zurich that has just provided us with new and important insights into non-volatile memory, as well as an intriguing mystery. Read this to learn more.
2016-03-16 Probing ReRAMs: 3D filaments, brain-like functions
Here's a look at a research on ReRAMs based only on the sub-oxides of silicon to make the case for the suitability of their devices for use as emulators of brain-like neural functions.
2011-04-11 PCM progress report no. 2: Review of PCM-related activities in early 2011
In this report, the author explores the PCM-related activities over the first quarter of 2011.
2015-01-29 NVM battle: When will choices be made?
In the long term, STTMRAM is sure to be the only candidate to substitute DRAM thanks to its high endurance. RRAM is sure to substitute NAND thanks to its high scalability/low cost.
2015-09-01 Mystery in memory: Why 3D XPoint is not PCM
By keeping secret the technology behind 3D XPoint memory, Micron and Intel gave the engineering community a challenge by using phrases such as "new recipe," "bulk switching," "fundamental and new."
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