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2014-03-06 Viewpoint: FD-SOI supports Moore's Law
STMicroelectronics' Laurent Remont believes that when it comes to price, power, and performance, fully-depleted silicon-on-insulator comes into its own as a viable option in the journey towards 10nm process technology.
2007-06-12 UMC, ARM team on 65nm SOI solutions
United Microelectronics Corp. and ARM announced that a test chip built with ARM silicon-on-insulator libraries was taped-out successfully on UMC's 65nm SOI process.
2004-10-19 TSMC, Freescale to develop 65nm SOI technology
Taiwan Semiconductor Mfg Co. (TSMC) and Freescale Semiconductor Inc. have signed an agreement to jointly develop a next-generation silicon-on-insulator (SOI) transistor front-end technology targeted for the 65nm advanced CMOS process node.
2002-04-19 TRONIC'S to use Soitec SOI wafers for MEMS technology
MEMS contract manufacturer TRONIC'S Microsystems SA has selected Soitec's Smart Cut UNIBOND silicon-on-insulator wafers as the starting material for its SOI-based MEMS technology.
2002-06-17 Toshiba enhances embedded DRAM with SOI wafer
Toshiba Corp. has accomplished a breakthrough in embedding DRAM on SOI wafers, which ends the DRAM performance degradation typical of such integration.
2015-11-11 Synopsys, GlobalFoundries team up for 22nm FD-SOI sol'n
The Synopsys Galaxy Design Platform, enabled for the GlobalFoundries' 22FDX platform, claims to offer FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies.
2014-06-06 Synopsys joins in ST-Samsung FD-SOI collaboration
The extension of the collaboration facilitates the provision of Synopsys' Galaxy design flow for ST's 28nm FD-SOI technology, the adoption of which is expected to be accelerated.
2004-02-02 Strained SOI on the move to mainstream
The advantage of strained silicon lies in its electrical properties. The crystalline lattice of the top, electrically active layer of silicon is strained so that electric charges flow faster.
2012-10-23 ST, Soitec roll 28nm FD-SOI CMOS process thru CMP
ST's CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process that uses silicon substrates from Soitec is available for prototyping to universities, research labs and design firms.
2014-05-16 ST finds FD-SOI partner in Samsung
Samsung will work with ST's 28nm FD-SOI design platform, making its foundry services accessible to the broader semiconductor industry. The companies hope their partnership will encourage designers to adopt the process.
2005-09-29 Soitec, SEZ to speed industrialization of strained SOI substrates
The Soitec Group and the SEZ Group have initiated a joint development program (JDP) intended to speed the industrialization of next-generation strained silicon-on-insulator (sSOI) substrates.
2003-11-26 Soitec, KLA-Tencor team to enhance SOI wafer technology
Soitec and KLA-Tencor have announced a joint program aimed to improve the quality and cost of production of SOI wafers used in low-power consumption IC apps.
2003-05-27 Soitec, ASM target strained silicon on SOI
Soitec and ASM International announced that they are working together on strained SSOI technology, which targets the 65nm node.
2006-10-31 Soitec, ARM team on SOI devt program
Soitec announced that they have entered into a joint-development agreement with ARM to support the future development of SOI libraries for the fabless/foundry arenas.
2003-12-03 Soitec upgrades equipment from SOI wafer production
Soitec announced that it is expanding its manufacturing capabilities to ensure broad industrial availability of strained SOI wafers.
2005-01-19 Soitec supplies AMD with UNIBOND SOI wafers
Soitec Group has inked an agreement with AMD for a long-term supply of UNIBOND silicon-on-insulator (SOI) wafers.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2008-07-21 SOI Industry Consortium welcomes Nvidia
Nvidia is the newest member of the SOI Industry Consortium.
2005-06-29 SOI embedded DRAM company raises $16 million
Innovative Silicon Inc., a developer of an embedded memory based on floating the body voltage for transistors implemented using silicon-on-insulator CMOS processes, said that Austin Ventures has joined with existing investors to lead a $16.0 million Series B round of investment in the company.
2008-02-22 SOI consortium signs Applied Materials onboard
Applied Materials has joined the SOI Industry Consortium, a group aimed at accelerating silicon-on-insulator innovation into broad markets.
2003-12-22 SOI CMOS Technology for RF System-on-Chip Applications
This application note discusses SOI CMOS technology for RF system-on-chip applications
2012-07-31 Simulation reveals double battery life thru FinFETs-on-SOI
Gold Standard Simulations performed TCAD simulations where fully depleted FinFET style transistors made on SOI wafers allowed between half and one-third the leakage current of FinFETs made on bulk silicon.
2006-01-13 Silicon wafers, SOI see strong growth
Driven by 300mm technologies, the worldwide silicon wafer market is projected to see strong growth over the next few years.
2013-07-12 RF SOI wafers from Soitec receive mainstream attention
Soitec's technology enables highly tunable amplifiers to address multi-region requirements on a single platform while also reducing noise and interference.
2007-06-14 Renesas touts SOI SRAM tech for 32nm, beyond
Renesas has developed new technology to implement on-chip SOI SRAM in the 32nm node and finer processes.
2005-09-28 Renesas reports floating-body SOI RAM
Renesas Technology said that it has developed a capacitor-less "floating-body" twin-transistor RAM (TTRAM), that would enable faster, more power-efficient embedded memory for SoC devices
2005-09-28 Renesas reports floating-body SOI RAM
Renesas Technology Corp. has developed a capacitor-less "floating-body" twin-transistor RAM (TTRAM) that would enable faster, more power-efficient embedded memory for system-on-chip (SoC) devices
2015-07-08 Peregrine, GlobalFoundries unveil RF SOI 300mm platform
The UltraCMOS 11 uses a custom fabrication flow from GlobalFoundries' Fab 7 facility, and will be the foundation for Peregrine's high volume mobile products and SOI products for other applications.
2002-02-18 Oki Electric ships fully depleted SOI LSIs
Oki Electric Ind. Co. Ltd has commenced commercial shipment in volume what it claims to be the first fully depleted silicon-on-insulator LSIs.
2004-01-26 MEMC to adopt SiGen SOI wafer technology
MEMC Electronic Materials Inc. has entered into a licensing agreement with Silicon Genesis Corp.
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