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2014-03-14 ST's SiC MOSFETs enable energy efficient designs
The SCT30N12 allows power supply designers to enhance energy efficiency in applications such as solar inverters and electric vehicles, enterprise computing and industrial motor drives.
2008-01-21 Solar inverters get efficiency boost from SiC transistors
The Fraunhofer Institute for Solar Energy Systems in Germany claims it has achieved record efficiency for its inverter designed for PV generators using SiC power transistors from U.S. vendor Cree
2012-01-31 SiC MOSFETs target high frequency apps
Rated at 100A/1200V, the QJD1210010 and QJD1210011 feature -175C junction temperature.
2015-03-04 High-voltage pulse generators make use of SiC MOSFETs
ROHM's SiC MOSFET, allowing for further miniaturisation and greater performance, marks its first application in new ultra high-voltage pulse generators made by Fukushima SiC Applied Engineering Inc
2013-04-26 GaN, SiC power IC market to rise steadily thru 2022
Worldwide revenue from sales of SiC and GaN power semiconductors is projected to rise to $2.8 billion in 2022, up from just $143 million in 2012, noted IMS Research
2013-04-23 Delta Energy Systems bank on Cree's SiC MOSFETS
Utilising 1200V SiC MOSFET's from Cree in an 11kW PV inverter, Delta has been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its products
2013-07-24 Delta Elektronika's power supplies spec in Cree's MOSFETS
Using Cree's SiC MOSFETS, Delta Elektronika demonstrated a 21 per cent decrease in overall power supply losses and a reduction in component count by up to 45 per cent.
2016-03-01 Compact driver board from Wolfspeed targets SiC MOSFETs
The CGD15FB45P1 features a direct-mount low-inductance design and furnishes six output channels and an isolated power supply, as well as short-circuit, overtemperature and undervoltage protection.
2013-05-09 SiC power devices success rests on EV/HEV adoption
Yole Dveloppement points out that wide-bandgap transistor and diode growth potential is obscured by automotive qualification though PV inverter growth remains positive.
2012-07-04 SiC chips growth forecast at 37.67% CAGR discusses the emergence of Silicon Carbide (SiC) semiconductors in a market report, projecting that the segment will be worth $5.34 billion by 2022
2013-11-07 Richardson reveals 1.7kV SiC MOSFET from Cree
The C2M1000170D is geared for power supplies to 200W operating from DC inputs from 200V to 1kV, and it replaces silicon MOSFETs in auxiliary power supplies
2011-04-19 Fairchild acquires SiC transistor provider
By acquiring TranSiC, Fairchild gains the company's silicon carbide technology, which will complement its own capabilities in MOSFETs, IGBTs and multichip modules
2003-08-07 Cree to acquire APT SiC die
Cree has reached an agreement with Advanced Power Technology for the purchase of its SiC Zero Recovery Schottky Diode die
2012-01-20 1.2kV MOSFET incorporates SiC JFET
The UniSiC MOSFET provides exceptionally low Rdson and gate charge and low diode forward voltage drop, according to the companies.
2015-04-17 Electric cars drive growth in power electronics space
Yole Developpement predicted that electric cars will allow the power electronics market to reach $18.26 billion by 2020, as Chinese companies will set the stage for a major shift in the industry.
2002-07-04 Cree to develop substrates for microwave, power devices
Cree Inc. has received two contracts, worth about $14.4 million, from the Office of Naval Research of the U.S. military.
2013-05-09 1200V, 80Milliohm Silicon Carbide MOSFET
Cree Inc.'s latest Silicon Carbide (SiC) power MOSFET boasts high-speed switching with low capacitances, high blocking voltage with low RDS(on) and avalanche ruggedness
2011-05-23 Standard power modules deliver fast switching frequencies
Microsemi has expanded its standard power modules with silicon carbide (SiC) devices to offer standard, off-the-shelf products
2011-11-22 Power IC market sees 72% CAGR until 2015
IGBTs and MOSFETs are forecast to drive the market to grow from $14.2 billion this year to $16.7 billion in 2013
2011-06-23 Upcoming technologies push power revolution
Several electronic technologies are playing high-profile roles in power revolution, among them 3D transistors, solid-state lighting, energy harvesting, superconducting cable and silicon carbide components.
2013-11-14 Rohm first to blink, re-evaluates fuel cell focus
Japanese firm Rohm is working with Kyoto University and Aquafairy to develop solid fuel-type hydrogen fuel cells.
2004-12-20 Power FET 'revolutionizes switching devices'
Matsushita Electric claims its new transistor revolutionizes switching devices.
2013-12-05 PFC controller halves power dissipation in shunt resistor
TI's UCC28180 8-pin PFC controller features an adjustable switching frequency that helps the designer optimize their design for size, cost and efficiency.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs.
2012-10-24 Keithley combines Curve Tracer's features with parameter analyser
The firm introduced seven instrumentation, software and test fixture configurations for parametric curve tracing applications for characterizing high power devices at up to 3kV and 100A.
2011-06-22 Iwatsu to produce curve tracers for Cascade Microtech
Iwatsu Test Instruments Corp. will manufacture CT-3100/3200 Curve Tracers exclusively for Cascade Microtech to provide versatile wafer-level measurement for the growing power device market.
2014-08-22 Infineon buys IR to reposition itself in chip industry
The German company is paying $3 billion in cash for Internal Rectifier, an acquisition that will expand its expertise in compound semiconductors, as well as facilitate a stronger market presence.
2012-11-30 Improve efficiency of photovoltaic systems
Learn about the overall design of PV systems, along with new semiconductor advances that provide designers with the best tools for developing PV inverters.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2013-07-16 650V NPT IGBTs withstand harsh industrial environments
Microsemi's 650V non-punch through insulated bipolar gate transistors are offered in 45A, 70A and 95A current ratings and enable extremely high switching speeds of up to 150kHz.
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