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2008-01-21 Solar inverters get efficiency boost from SiC transistors
The Fraunhofer Institute for Solar Energy Systems in Germany claims it has achieved record efficiency for its inverter designed for PV generators using SiC power transistors from U.S. vendor Cree
2011-04-19 Fairchild acquires SiC transistor provider
By acquiring TranSiC, Fairchild gains the company's silicon carbide technology, which will complement its own capabilities in MOSFETs, IGBTs and multichip modules.
2009-06-08 Cree inks transistor supply deal with Korea firm
Cree Inc. has signed a definitive agreement with RFHIC Corp. to supply GaN-on-SiC transistors to the South Korean company's GaN HEMT amplifier product families
2012-01-31 SiC MOSFETs target high frequency apps
Rated at 100A/1200V, the QJD1210010 and QJD1210011 feature -175C junction temperature.
2012-09-04 RF transistor aimed at secondary surveillance radar aviation apps
Microsemi's 1011GN-700ELM is based on GaN on SiC technologies, and operates at 1030MHz and supports short- and long-pulsed extended length message
2014-02-17 GAn-on-SiC based HEMT pushes power at 150W
Using wafer fabrication processes, the HEMTs provide gain, efficiency, bandwidth and ruggedness over several bandwidth ranges.
2012-11-22 Fairchild's SiC solutions boast enhanced reliability
Fairchild's SiC BJTs enable higher switching frequencies due to lower conduction and switching losses that provide up to 40 per cent higher output power in the same form factor
2001-10-09 AlGaN/GaN transistor application notes: Surface morphology
This application note describes the typical surface morphology of RF Nitro's AlGaN/GaN transistor structures grown on SiC or sapphire.
2010-02-09 100GHz RF graphene transistor trumps GaAs ICs
Fabricated on new 2-inch graphene wafers and operating at room temperature, the RF graphene transistors are said to beat the speeds of all but the fastest GaAs transistors.
2013-05-09 SiC power devices success rests on EV/HEV adoption
Yole Dveloppement points out that wide-bandgap transistor and diode growth potential is obscured by automotive qualification though PV inverter growth remains positive
2003-06-16 Cree Microwave RF transistor offers >13dB gain
The company has released the CRF-24010, a Class AB 10W silicon carbide device that is based on the company's 2G 48V MESFET process.
2013-07-24 Delta Elektronika's power supplies spec in Cree's MOSFETS
Using Cree's SiC MOSFETS, Delta Elektronika demonstrated a 21 per cent decrease in overall power supply losses and a reduction in component count by up to 45 per cent
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems.
2004-12-20 Power FET 'revolutionizes switching devices'
Matsushita Electric claims its new transistor revolutionizes switching devices
2005-10-18 Oki Electric develops GaN-HEMT
Oki Electric Industry Co., Ltd disclosed the development of Gallium Nitrate High Electron Mobility Transistor (GaN-HEMT), a power transistor with improved amplifying characteristics, at the 208th Meeting of the Electrochemical Society
2007-10-12 GaN Power FET achieves 65.4W in Ku-band
Toshiba has developed a GaN power FET for the Ku-band frequency range that achieves an output power of 65.4W at 14.5GHz, said to be the highest at this frequency band today.
2013-01-11 Digi-Key inks agreement with GeneSiC
The distribution agreement enhances GeneSiC Semiconductor's ability to seed the market with its brand of Silicon Carbide High Voltage, High Temperature products.
2002-06-13 Cree Microwave MESFET covers 1.8GHz to 2.2GHz
Cree Microwave Inc. has announced the release of the CRF-22010 SiC MESFET power transistor that is designed to cover the entire DCS/PCS/UMTS frequency band of 1.8GHz to 2.2GHz.
2009-06-11 GaN HEMT amplifier claims record efficiency
Cree Inc. claims to have achieved record efficiency for a commercially available 2GHz microwave amplifier.
2011-05-23 Standard power modules deliver fast switching frequencies
Microsemi has expanded its standard power modules with silicon carbide (SiC) devices to offer standard, off-the-shelf products
2011-06-23 Upcoming technologies push power revolution
Several electronic technologies are playing high-profile roles in power revolution, among them 3D transistors, solid-state lighting, energy harvesting, superconducting cable and silicon carbide components.
2012-09-25 TriQuint wins DARPA contract to up performance of RF power amps
The Near Junction Thermal Transport effort will build on TriQuint's advanced GaN on silicon carbide technology and the reliability of its modern RF ICs.
2016-03-31 Not much fanfare about GaN at APEC 2016
Talk about GaN was low key but there were still promising developments, including new applications for low-voltage GaN transistors and AlGaN driver ICs for GAN FETs.
2003-07-14 LG runs ACAD FinePower for digital TV SoCs
LG Electronics has selected ACAD Corp.'s FinePower Dynamic Power tool for the design and verification of complex ICs used in digital TV receivers.
2014-08-22 Infineon buys IR to reposition itself in chip industry
The German company is paying $3 billion in cash for Internal Rectifier, an acquisition that will expand its expertise in compound semiconductors, as well as facilitate a stronger market presence.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2015-07-03 Examining 3D embedded substrate power packaging
Here is a look at 3D embedded substrate power packaging technologies, which will be increasingly deployed in everything from cell phones to hybrid electric vehicles.
2015-07-30 Diamond substrate unleashes GaN potential
Diamond substrates and heat spreaders enable GaN devices to operate near its peak power output without degradation in lifetime.
2013-05-08 650V power chip runs super junction MOSFET
Infineon Technologies' C7 series boasts the world's lowest R DS(on) of 19m? in a TO-247 package and 45m? in the TO-220 and D 2PAK packages.
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