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What is a system on chip (SoC)?
A system on chip (SoC) refers to integrating all components of a computer or other electronic system on to a single IC. An SoC may contain digital, analogue and mixed-signal functions all on a single chip substrate. SoCs are often used in embedded systems.
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2014-06-02 Toshiba upgrades 650W SiC shottky diodes with up to 12A
The additional devices make up the 6A, 8A, 10A and 12A line-up. They are built using silicon carbide (SiC), a wide-bandgap semiconductor that gives schottky barrier diodes with high breakdown voltage.
2013-09-23 Toshiba adds to SiC schottky barrier diodes family
The 650V devices are intended for diverse applications, including power conditioners for photovoltaic power generation systems.
2014-03-14 ST's SiC MOSFETs enable energy efficient designs
The SCT30N12 allows power supply designers to enhance energy efficiency in applications such as solar inverters and electric vehicles, enterprise computing and industrial motor drives.
2011-05-31 SPTS, Griffith University to develop SiC-on-Si wafers
A joint agreement has been forged between SPTS and Griffith University for the commercial development of SiC-on-silicon wafers as viable semiconductor material for LED, power and MEMS devices.
2008-01-21 Solar inverters get efficiency boost from SiC transistors
The Fraunhofer Institute for Solar Energy Systems in Germany claims it has achieved record efficiency for its inverter designed for PV generators using SiC power transistors from U.S. vendor Cree.
2010-11-08 Silicon diodes replace SiC devices in new circuit topology
STMicroelectronics unveils new circuit topology utilizing silicon diodes instead of SiC devices for improved efficiency
2013-06-27 SiC, GaN lead market for solar inverters
Driven by the downstream demand for solar modules, silicon carbide and gallium nitride will grow to $1.4 billion in 2020, reflecting a solid seven per cent CAGR growth.
2013-06-17 SiC Schottky Rectifiers from GeneSiC boasts 3300V, 0.3A
GeneSiC's 3300 V/0.3 A Schottky rectifiers target voltage multiplier circuits and high voltage assemblies used in a wide range of x-ray, laser, and particle generator power supplies.
2006-11-16 SiC Schottky diodes fit for PFC apps
The unique features of SiC as a device material allow producing boost diodes with nearly ideal performance characteristics suitable for all power ranges in PFC applications
2016-03-17 SiC ready: X-Fab offers 6in SiC from Texas foundry
X-Fab has upgraded the manufacturing process at its wafer fab in Lubbock, Texas, in order to start supplying 6in SiC wafers.
2013-05-09 SiC power devices success rests on EV/HEV adoption
Yole Dveloppement points out that wide-bandgap transistor and diode growth potential is obscured by automotive qualification though PV inverter growth remains positive.
2012-01-31 SiC MOSFETs target high frequency apps
Rated at 100A/1200V, the QJD1210010 and QJD1210011 feature -175C junction temperature.
2012-07-04 SiC chips growth forecast at 37.67% CAGR
MarketResearch.com discusses the emergence of Silicon Carbide (SiC) semiconductors in a market report, projecting that the segment will be worth $5.34 billion by 2022.
2013-11-07 Richardson reveals 1.7kV SiC MOSFET from Cree
The C2M1000170D is geared for power supplies to 200W operating from DC inputs from 200V to 1kV, and it replaces silicon MOSFETs in auxiliary power supplies.
2013-05-31 Research reveals SiC film epitaxial growth on 300mm silicon
The Queensland Micro and Nanotechnology Facility of Griffith University and SPTS said the finding is the result of over 10 years research at QMF on low temperature SiC deposition on silicon.
2012-11-01 Mitsubishi Electric to roll SiC module-equipped CNC drive unit
The MDS-DM2-SPHV3-20080 is a multi-hybrid, multi-axis integrated-drive unit for drive control of spindle and servo motors.
2013-01-17 Microsemi expands SiC power module line
The devices are geared for high power switch mode power supplies, motor drives, uninterruptible power supplies, solar inverters, oil exploration applications.
2010-11-04 LAST POWER Project aims to develop advanced SiC and GaN semicon
The partners in a new publicly-funded European research project have just announced details of the multinational/multidisciplinary program called LAST POWER (Large Area silicon carbide Substrates and heTeroepitaxial GaN for POWER device applications).
2016-03-31 Investigating the impact of etching time on 4H-SiC defects
In this article, we looked into the relationship between the pre-growth hydrogen etching time and defects density on 4H-SiC substrate surfaces.
2015-03-04 High-voltage pulse generators make use of SiC MOSFETs
ROHM's SiC MOSFET, allowing for further miniaturisation and greater performance, marks its first application in new ultra high-voltage pulse generators made by Fukushima SiC Applied Engineering Inc.
2013-08-29 High power SiC diodes enable flexible layout options
IXYS' SS150 and SS275 series high power silicon carbide diodes are packaged in a low inductance, surface mount DE Series package and are available in 600V, 10A and 1200V, 5A configurations.
2013-03-05 Gate drivers target IGBT, SiC FET designs
TI's UCC27531 and UCC27532 output stage gate drivers claim to offer efficient output drive capability, short propagation delay and increased system protection for isolated power designs.
2014-02-17 GAn-on-SiC based HEMT pushes power at 150W
Using wafer fabrication processes, the HEMTs provide gain, efficiency, bandwidth and ruggedness over several bandwidth ranges.
2013-04-26 GaN, SiC power IC market to rise steadily thru 2022
Worldwide revenue from sales of SiC and GaN power semiconductors is projected to rise to $2.8 billion in 2022, up from just $143 million in 2012, noted IMS Research.
2002-03-26 Fscreen Sic-Tech builds display plant in Sichuan
Chengdu Fscreen Sic-Tech Co. Ltd has constructed a rear-projection display screen manufacturing base in Sichuan, China, for use in HDTVs.
2012-11-22 Fairchild's SiC solutions boast enhanced reliability
Fairchild's SiC BJTs enable higher switching frequencies due to lower conduction and switching losses that provide up to 40 per cent higher output power in the same form factor.
2011-04-19 Fairchild acquires SiC transistor provider
By acquiring TranSiC, Fairchild gains the company's silicon carbide technology, which will complement its own capabilities in MOSFETs, IGBTs and multichip modules.
2013-04-23 Delta Energy Systems bank on Cree's SiC MOSFETS
Utilising 1200V SiC MOSFET's from Cree in an 11kW PV inverter, Delta has been able to extend the DC input voltage range while maintaining and even increasing the maximum efficiency of its products.
2006-01-30 Cree, KEPCO demonstrate SiC inverter
Cree Inc. and Kansai Electric Power Co. have successfully demonstrated a 110kVA silicon carbide (SiC) three-phase inverter.
2003-08-07 Cree to acquire APT SiC die
Cree has reached an agreement with Advanced Power Technology for the purchase of its SiC Zero Recovery Schottky Diode die.
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