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2011-02-16 Nanowire processors pack more arithmetic/logic
Touted as the world's first programmable nanoprocessor, the Harvard-Mitre crossbar nanowire arrays performed both operations and memory functions, since the state of nanowire FETs was non-volatile.
2005-09-27 Strained silicon to take IEDM spotlight
With high-k dielectrics apparently delayed beyond the 45nm node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques as the main pathway to faster transistors.
2015-12-14 Imec showcases next-gen devices to supersede silicon
Imec's R&D programme on advanced logic scaling is targeting the latest and mounting challenges for performance, power, cost and density scaling for future process technologies.
2003-10-02 High-k, strained Si leaving the lab
With performance improvements getting harder to wring out of CMOS by transistor shrinks, researchers are increasingly turning to strained silicon, high-k oxides, and different types of on-chip silicon-crystal orientation.
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