Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > Silicon-On-Insulator

Silicon-On-Insulator Search results

?
?
total search342 articles
2006-11-16 Use high-voltage drivers for large flat-panel displays
Designers are finding the optimum trade-off between strengths and limitations of available manufacturing technologies including HV-CMOS, BCD and silicon-on-insulator SOI to make high-voltage drivers in large flat displays.
2004-10-19 TSMC, Freescale to develop 65nm SOI technology
Taiwan Semiconductor Mfg Co. (TSMC) and Freescale Semiconductor Inc. have signed an agreement to jointly develop a next-generation silicon-on-insulator (SOI) transistor front-end technology targeted for the 65nm advanced CMOS process node.
2002-04-15 TSMC exec advocates slower steps between process nodes
Taiwan Semiconductor Mfg. Co. Ltd said it aims to deliver its first ICs based on 90nm design rules by the third quarter of this year, about one year ahead of the time frame cited in the industry's International Technology Roadmap for Semiconductors.
2005-02-11 Toshiba unveils high-density DRAM with floating-body cells
Toshiba Corp. has developed 128Mb silicon-on-insulator (SOI) DRAM with floating-body cells that the chip maker claims will help usher in embedded DRAM chips on SOI wafers.
2003-08-06 Toshiba memory cell technology eyes DRAM apps
Toshiba has developed what it claims to be the world's first memory cell technology for embedded DRAM system LSIs on SOI wafers.
2002-06-17 Toshiba enhances embedded DRAM with SOI wafer
Toshiba Corp. has accomplished a breakthrough in embedding DRAM on SOI wafers, which ends the DRAM performance degradation typical of such integration.
2012-10-23 ST, Soitec roll 28nm FD-SOI CMOS process thru CMP
ST's CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process that uses silicon substrates from Soitec is available for prototyping to universities, research labs and design firms.
2009-07-16 Soitec, IBM pioneer 22nm for 3D ICs
Soitec Group and IBM Corp. have teamed up to pioneer 22nm node silicon wafer substrate and bonding techniques that will enable wafer-level, 3D integration technology for next-generation ICs.
2006-10-31 Soitec, ARM team on SOI devt program
Soitec announced that they have entered into a joint-development agreement with ARM to support the future development of SOI libraries for the fabless/foundry arenas.
2006-07-10 Soitec to build 300mm fab in Singapore
Soitec SA announced that it plans to build a new production plant in Singapore and expand its existing production base in France.
2005-01-19 Soitec supplies AMD with UNIBOND SOI wafers
Soitec Group has inked an agreement with AMD for a long-term supply of UNIBOND silicon-on-insulator (SOI) wafers.
2008-11-11 Soitec opens 300mm wafer fab in Singapore
Soitec has inaugurated its new 300mm silicon-on-insulator wafer fab in new Pasir Ris Wafer Fab Park, Singapore.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2008-02-22 SOI consortium signs Applied Materials onboard
Applied Materials has joined the SOI Industry Consortium, a group aimed at accelerating silicon-on-insulator innovation into broad markets.
2003-12-22 SOI CMOS Technology for RF System-on-Chip Applications
This application note discusses SOI CMOS technology for RF system-on-chip applications
2006-01-13 Silicon wafers, SOI see strong growth
Driven by 300mm technologies, the worldwide silicon wafer market is projected to see strong growth over the next few years.
2014-10-10 Rising costs drive chip companies to alternate routes
The low cost of capital is fuelling M&A across all industries, and the rising cost and complexity of making chips is pouring gas on the fire in semiconductors.
2003-12-15 Renesas CMOS achieves high-speed operation
Renesas Technology Corp. has developed an SOI (Silicon On Insulator) CMOS device technology with a new structure that achieves faster operation while reducing the operating voltage.
2015-07-08 Peregrine, GlobalFoundries unveil RF SOI 300mm platform
The UltraCMOS 11 uses a custom fabrication flow from GlobalFoundries' Fab 7 facility, and will be the foundation for Peregrine's high volume mobile products and SOI products for other applications.
2002-02-18 Oki Electric ships fully depleted SOI LSIs
Oki Electric Ind. Co. Ltd has commenced commercial shipment in volume what it claims to be the first fully depleted silicon-on-insulator LSIs.
2003-01-17 Motorola pare plants, seeks 300mm partner
In 2000, Motorola Inc.'s Semiconductor Products Sector had 27 front-end and back-end manufacturing sites. By the middle of this year, the company will have reduced that number to 10.
2007-06-12 Modules step up energy efficiency in home apps
Infineon Technologies AG has unveiled the new CiPoS modules designed to enable energy-efficient operation of consumer appliances such as washing machines and air conditioners and offers efficiencies of up to 94 percent.
2015-02-13 Mixed-signal ASIC cuts BOM for space apps
Atmel's rad-hard ATMX150RHA delivers up to 22 million routable gates, includes non-volatile memory blocks and supports 2.5/3.3/5V and high-voltage I/Os with pre-qualified analogue IP.
2008-08-18 Memory rests hope on floating-body cells
Intel Corp. revisited its research on floating-body cells (FBCs) for advanced cache designs in microprocessors during the 2008 Symposium on VLSI technology in Hawaii.
2004-01-26 MEMC to adopt SiGen SOI wafer technology
MEMC Electronic Materials Inc. has entered into a licensing agreement with Silicon Genesis Corp.
2008-03-12 Magma joins SOI consortium as technical member
Magma Design Automation has signed up with the SOI Industry Consortium as a technical member, joining 20 other companies.
2009-09-29 Low-cost 32bit CMOS processor runs at 1.5GHz
Applied Micro Circuits Corp. has rolled out a CMOS-based, 32bit processor, built around IBM Corp.'s Power Architecture.
2002-12-12 Intel, IBM joust 90nm technology at IEDM meet
Intel and IBM each came to the 2002 International Electron Devices Meeting claiming logic performance leadership at the 90nm.
2006-01-31 Intel tips 45nm process, demos chips
Intel disclosed initial details of its 45nm process. Dubbed P1266, the process incorporates copper interconnects, low-k dielectrics, strained silicon and other features.
2005-02-21 Intel claims first single-chip silicon laser based on SOI
In what could disrupt the photonics space, Intel Corp. on Wednesday (Feb. 16) described what it claims is the world's first silicon-based continuous-wave laser on a single chip - built around silicon-on-insulator (SOI) and other technologies.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top