Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > spintronics

spintronics Search results

?
?
total search51 articles
2011-06-15 NEC, Tohoku University promote CAM-on-MRAM use
The use of magnetic RAM non-volatility with content addressable memories will enable the development of electronics that start instantly and consume zero electricity while in standby mode.
2005-07-18 Nanotech conference plots future of electronics
Presenters at the First International Nanotechnology Conference on Communication and Cooperation have identified key issues facing nanotechnology.
2008-04-16 MRAM is fit for space mission
Headed for orbit with the launch of Japan Aerospace Exploration Agency's SpriteSat is MRAM technology, taking the place of both SRAM and flash memory.
2004-07-08 MRAM developers on target for rollout within 2004
Near the end of the 1990s, a flurry of announcements promised a 2004 rollout for a radical approach to memory chip technology based on manipulating electron spin.
2008-04-21 Memory tech puts 300M tunes in MP3 players
Researchers at the University of Glasgow have devised a molecular scale switch that they claim could dramatically improve the data storage capability of devices without increasing their size.
2007-08-16 Managing embedded memory at 45nm
Embedded designers will face major challenges associated with embedded memory at or around the 45nm technology node. Industry leaders have already declared that conventional SRAM, flash and DRAM will encounter scalability and endurance issues at those feature sizes.
2009-08-05 Magnetic superatoms could make faster PCs
Virginia Commonwealth University scientists have uncovered a magnetic superatom that one day may be used to create molecular electronic devices for the next generation of faster computers with larger memory storage.
2013-05-31 Magnetic domain control to lead to low-power memory
MIT researchers said the approach controls magnetism by applying a voltage and requires little power to write and no power to maintain the stored information, leading to low-power data storage.
2004-02-10 Keithley, Albany NanoTech partner in optoelectronics
Keithley Instruments has collaborated with the Albany NanoTech to further their understanding of nanotechnology and optoelectronics technologies.
2016-04-21 Inverse spin Hall effect converts microwaves into energy
University of Utah scientists investigated and developed a method on how to generate energy using microwaves by demonstrating an effect called the inverse spin Hall effect.
2014-07-04 IBM rushes to perfect 1.4nm transistor channels
Moore's Law is not yet dead and the tech giant is racing to come up with 1.4nm transistor channels with an approach that uses multiple carbon nanotubes, which it has until 2020 to perfect.
2015-04-15 Graphene offers Moore's Law indefinite extension
Apart from being dubbed as a wonder material for semiconductors and flaunting about 100 times the strength of steel by weight, graphene is considered ideal for nanoscale spintronic devices.
2006-11-17 Get ready for 675mm fabs in 2021
The semiconductor industry could see a plethora of major changes in the post-CMOS era, including a frightening scenario in the distant future.
2014-09-23 Future memory devices: 10 technologies to keep in mind
While current memory types are smarter and built with higher density, the succeeding memory technologies will integrate new types of materials, as well as smarter algorithms that make storage a hierarchy off-chip in a way that cache memory is hierarchical on-chip.
2008-02-28 Freescale MRAM lifts off to space
MRAM products from Freescale Semiconductor have been selected for use in a magnetometer subsystem from Angstrom Aerospace, which will be launched into space on board the Japanese research satellite SpriteSat.
2007-01-01 End of Moore's Law prompts technology search
The search is on for a technology that could replace today's workhorse CMOS-based silicon.
2009-06-26 Domain wall marks MRAM for next-gen LSI
NEC Corp. and NEC Electronics Corp. announced an MRAM technology suitable for system LSI embedding.
2005-12-12 Consortium seeks to ramp nanoelectronics research
A consortium of companies has announced its first research grants under the Semiconductor Industry Association's new Nanoelectronics Research Initiative.
2014-09-19 Complex oxide holds the key to ultimate memory device
Exhibiting both magnetic and ferroelectric properties, the complex oxides discovered by the CCNY team cloud improve memory devices.
2008-09-23 Albany NanoTech to open 22nm R&D fab
Albany NanoTech is set to open a new facility that will focus on 22nm R&D technology, post-CMOS processes and clean technology.
2009-02-09 'First' 300mm MTJ fab in U.S. unveiled
Grandis Inc. announced the first 300mm magnetic tunnel junction (MTJ) fabrication facility in the United States dedicated to spin torque transfer-RAM (STT-RAM) memory technology. The recent additions to its MTJ fab enable Grandis to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top