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2010-02-25 Junctionless transistor eases chip making
Scientists at the Tyndall National Institute have designed and fabricated what they claim is the first junctionless transistor that can help simplify chip manufacture
2004-12-23 ESBT combines bipolar, MOSFET technologies' strengths
ST unveiled a hybrid emitter-switched bipolar transistor designed for use in welding equipment and power factor correction for audio amplifiers
2008-11-26 aBCD process tech cuts voltage transistor pitch
MagnaChip Semiconductor Ltd has announced the availability of its 0.18?m and 0.35?m advanced bipolar CMOS-DMOS (aBCD) process technologies for foundry customers
2005-10-21 ST offers the best of BJT and MOSFET in one single transistor
ST introduced a family of hybrid EBST designed for industrial three-phase auxiliary power supplies and Single-Ended Primary Inductance Converters (SEPIC) used as power factor pre-regulators in industrial lighting apps.
2008-01-31 350mA buck boost LED driver using bipolar junction transistors, high side current sensing and a NCP3063 controller
This application note and associated demo board will focus on driving multiple LEDs, at a regulated 350mA, from low voltage DC or AC sources commonly used in lighting applications.
2005-10-14 ST's new Hybrid BJT/MOSFETs deliver speed and power
Touting a breakthrough in high-voltage, high-switching applications, STMicroelectronics' new hybrid emitter-switched bipolar transistors (EBST), particularly suited to industrial three-phase auxiliary power supplies and single-ended primary inductance converters (SEPIC), boasts the industry's best combination of low forward voltage drop, high blocking voltage, and fast switching speed
2013-09-20 PWM controller reduces cost for smartphone power supplies
Dialog Semiconductor's iW1679 digital AC/DC PWM controller allows low-cost, 10W power bipolar junction transistor switches to reduce BOM cost in 5V/2A smartphone adapters and chargers.
2006-11-06 ON Semi offers BJTs in multiple package options
ON Semiconductor has announced the expansion of its low Vce(sat) BJTs portfolio to include WDFN6, WDFN3, SOT-23, SOT-563 and ChipFET packages.
2012-11-22 Fairchild's SiC solutions boast enhanced reliability
Fairchild's SiC BJTs enable higher switching frequencies due to lower conduction and switching losses that provide up to 40 per cent higher output power in the same form factor.
2005-10-14 BJTs reduce overall circuit cost
ON Semiconductor introduced a new family of high performance, VCE(sat) bipolar junction transistors (BJTs) that promise to reduce overall circuit cost while contributing to better power efficiency and longer battery life in a wide variety of portable applications, including cellphones, PDAs, media players, notebook computers and digital cameras
2008-07-07 Audio apps receive a shot of Fairchild BJTs
Fairchild Semiconductor brings audio equipment designers bipolar junction transistors (BJTs) that meet the performance needs of today's home, music and commercial audio applications
2013-01-29 1/f noise measurement system supports 1Hz-10MHz
ProPlus Design Solutions' 9812D can measure low-frequency noise characteristics of on-wafer or packaged semiconductor devices such as MOSFETs, BJTs, JFETs, diodes and diffusion resistors.
2010-12-21 Low VCEsat transistors in loadswitch apps
Read about the different low VCEsat Breakthrough In Small Signal (BISS) transistors.
2014-10-10 Infineon bets high on power IC manufacturing
The company recently turned an old 200mm fab in Dresden into the world's most highly automated and made its 300mm fab in Dresden the first high-volume fab for power ICs worldwide.
2003-10-02 WJ HBT amplifier eyes medium power market
WJ Communications Inc. has introduced a family of InGaP hetero-junction bipolar transistor medium power driver amps that are suitable for wireless apps.
2003-09-04 Toshiba power amplifier suits 5GHz WLAN apps
Toshiba Corp. has extended its line of RF GaAs HBT MMICs to include a power amplifier specifically developed for use in 5GHz WLAN systems.
2011-09-26 Specialized foundry processing yields high-performance analog IC
Learn about the impact of foundry process on achievable specifications.
2004-01-29 Sirenza amplifier has internal regulated bias circuit
Sirenza Microdevices has expanded its silicon germanium (SiGe) product portfolio with the release of the SGB family.
2003-12-22 Sirenza amp with active bias
Sirenza Microdevices Inc. has released the SXA-3318B gallium arsenide (GaAs) hetero-junction bipolar transistor (HBT) MMIC.
2005-06-13 Semiconductor technologies for power management (Part 1)
Understand better why ICs and discrete transistors require very different methods of fabrication.
2012-10-19 Infineon expands 3rd gen RC conducting IGBT portfolio
The new generation offers lower switching losses, reducing the thermal stress on the device while also lengthening its life time and increasing its reliability.
2003-03-14 GaAs still dominant in cellphone RF
Despite the promotion for silicon germanium and CMOS for wireless transceiver ICs, GaAs still dominates among cellphone power amplifiers, according to a new study released by Strategy Analytics.
2008-06-05 Freescale debuts 50V LDMOS power transistors for L-Band
Freescale Semiconductor has unveiled the world's first 50V LDMOS RF power transistor for L-Band radar applications
2003-10-03 CDMA/AMPS 4mm x 4mm Power Amplifier Modules
This application note gives a general description and discusses the evaluation board, minimum test bench requirements, turn on procedures, and layout considerations of CDMA/AMPS 4mm x 4mm Power Amplifier Modules.
2003-10-03 AWT6111 CDMA/AMPS Power Amplifier
This application note gives a general description and discusses the application board, minimum bench requirements, turn on procedures, and layout considerations of the AWT6111 CDMA/AMPS Power Amplifier.
2003-08-18 NBB and NDA Series Reliability
This application note provides additional information on component reliability with varying device junction temperature, and the effect of the package used on junction temperature
2012-10-23 TCAD eases FinFET design and variability analysis
FinFET is the first fundamental change in transistor architecture since the time MOSFET replaced bipolar transistor as the transistor of choice for logic applications
2004-12-03 KPCS CDMA 4mm-by-4mm power amplifier modules
This app note demonstrates the 4mm-by-4mm hetero-junction bipolar transistor (HBT) power amplifier modules designed for South Korean PCS CDMA handsets.
2013-11-01 TI unveils 20V DC/DC synchronous buck controller
The LM27403 is touted by the firm as the industry's first analogue DC/DC controller with dynamic temperature-compensated inductor current sensing.
2003-07-16 Substrate noise can tax tools, methodologies
Raminderpal Singh, manager of Process Design Kit Development at IBM, says complex substrate-modeling, prediction methodologies and tools can all prove futile in IC design without understanding the "bigger" parasitic future.
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