Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > buried capacitance technology

buried capacitance technology Search results

?
?
total search16 articles
2003-03-25 Sanmina-SCI licenses capacitance technology to Oak-Mitsui
Sanmina-SCI Corp. has announced that Oak-Mitsui Technologies has signed a licensing agreement to manufacture and market thin, film-based substrates using the company's patented Buried Capacitance technology.
2005-08-15 Sanmina-SCI licenses Buried Capacitance to ISU Petasys
Sanmina-SCI Corp. has entered into a licensing agreement with ISU Petasys Corp. to manufacture multilayer PCBs using Sanmina-SCI's patented Buried Capacitance (BC) technology.
2007-10-05 Tech lets ICs sense surroundings
ChipSensors Ltd, a startup with a pedigree in sensors and mixed-signal CMOS design, unveiled a technology that it claims will let the surface of an IC sense temperature, humidity, pathogens and certain gases
2003-01-03 Sanmina-SCI develops via process to reduce HF losses
Sanmina-SCI Corp. has developed several processes to improve high frequency electrical performance and signal integrity of via structures used to interconnect traces on different layers in PCB and backplanes.
2012-09-14 X-Fab claims the first open platform MEMS 3D process
X-Fab's 3-D sensor process is suitable for applications ranging from mobile devices, consumer goods, games and toys, automotive, robotics, industrial and medical equipment.
2004-02-02 Strained SOI on the move to mainstream
The advantage of strained silicon lies in its electrical properties. The crystalline lattice of the top, electrically active layer of silicon is strained so that electric charges flow faster.
2005-06-20 Sony, Toshiba co-develop 45nm embedded DRAM
Sony Corp. and Toshiba Corp. have reported they developed the first 45nm embedded DRAM cell by scaling embedded DRAM cells down to 0.069 square microns.
2005-09-08 RF ICs can be quite complex
According to one industry analyst, the worldwide handset RF semiconductor market is expected to grow from $5.3 billion in 2004 to $8.26 billion in 2008
2005-09-08 RF ICs can be quite complex
Understanding that complexity, and putting these devices to work for you, can help get you ahead of the competition
2005-06-13 Ironwood logic analyzer adapter helps debug low-power SDRAM
Ironwood Electronics' LA-BGA60C-DDRRAM-01 adapter enables memory device analysis used in cellphones, digital cameras, MP3 players and PDAs with the Agilent 16XXX logic analyzer system.
2005-06-01 How to drive switching devices without losing speed
This article describes a high-voltage process for the high-side gate driver IC and the conventional high-side driver topology, and also addresses the driver IC problems
2015-12-14 Get 500W in converter with GaN (Part 2)
In Part 2, we tackle the key details of physical and electrical design, including layout, key waveforms and losses. We also summarise key potential improvements.
2014-05-05 Exploring Samsung 2x nm LPDDR3 DRAM
Know some of the challenges faced by memory makers as they strive for sub-20 nm devices.
2013-06-12 DRAM makers find new processes for sub-nm DRAM cells
TechInsights studied the processes and device architectures of mass-produced 3xnm SDRAM cell array structures from major manufacturers and found that the technologies can be scaled further.
2007-06-25 Designing in the age of 3D systems
The optimal utilization of the third dimension requires a careful design of the overall 3D system architecture.
2014-03-06 A detailed look at Micron-Sony's 16Gb ReRAM
The ReRAM used CuTe as the active memory material where in a CbRAM cell the growth and removal of a Cu filament link through an adjacent thin insulator to a lower electrode yields two NV logic states.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top