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What is DRAM?
Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor within an IC. Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. Because of this refresh requirement, it is a dynamic memory as opposed to SRAM and other static memory. And unlike non-volatile firmware chips, both DRAM and SRAM lose their content when the power is turned off.
total search2226 articles
2007-10-12 XDR DRAM transfers data at 9.6GBps
Elpida Memory and Rambus claim the industry's fastest DRAMthe 512Mbit, 4.8GHz XDR DRAM, with a data transfer rate of 9.6GBps.
2005-04-05 XDR DRAM eyes digital consumer apps
Elpida Memory is sampling a 512Mb XDR DRAM that operates at 3.2GHz and provides a data transfer rate of 6.4GBps.
2008-05-02 Work underway on mobile DRAM interface spec
The Serial Port Memory Technology Working Group has been formed to devise an open standard for a next-generation DRAM interface technology in mobile products.
2008-04-24 Winbond, Qimonda team up on next-gen DRAM
Qimonda this week said that it has signed a technology license and foundry agreement for its new 65nm 'buried wordline' technology with Taiwan's Winbond Electronics.
2004-08-26 Winbond to output UTT DRAM
Winbond Electronics Corp. has started producing untested DRAM chips.
2005-05-24 Winbond to clear eTT commodity DRAM memory inventory
Chip maker Winbond Electronics announced that it will first clear its inventory of effectively tested (eTT) commodity DRAMs and will not manufacture the product until capacity expansion has been achieved for 12in wafers by the end of the year.
2008-01-11 Winbond taps ESI solution for 70nm DRAM
Electro Scientific Industries announced that Winbond Electronics has adopted its UV laser link processing to enable the latter's move to 70nm advanced DRAM production.
2006-11-03 Winbond releases 256Mb low power DRAM
Winbond has launched a range of low power DRAM memory components designed to meet the needs of mobile devices.
2012-10-31 Win8 not expected to spark DRAM shipments
With Microsoft taking a leaner approach with its operating systems, maintaining the same DRAM requirements as before, Windows 8 is not expected to create a surge in Q4 DRAM shipments.
2016-05-12 Win some, lose some: DRAM stands on shaky ground
DRAM has found itself in the situation of being a low-margin, commodity memory in a slowing tablet and PC market, while it still makes the most sense from a performance, density and cost perspective.
2009-03-13 Will Taiwan DRAM venture push through?
Is the proposed Taiwan memory venture already falling apart?
2009-05-05 What should Taiwan DRAM makers do to survive?
Taiwan's DRAM makers have been losing money for a long while. And there is no end in sight. According to Mark LaPedus, it's time for Taiwan's DRAM makers to merge, consolidateor give up.
2011-11-30 Weak PC demand drags DRAM price
The ASP of DDR3 4GB dropped by 7.9 percent to $17.5, while DDR3 2GB fell below $10 to $9.5, a 7.3 percent decline.
2011-02-25 Vendors keen on pushing mobile DRAM to higher speeds
While 800- or 1,066MHz LPDDR2 devices could serve as a bridge to next-gen technologies, they could also push out other next-gen candidates.
2007-07-26 Uptrend in DRAM contract prices seen until Q4
DRAMeXchange predicts that DRAM contract prices will continue on an uptrend until Q4, due particularly to the peak PC shipment season in October to November.
2009-04-09 Unlock Micron's 50nm DRAM technology
With their latest 50nm process technology, Micron Technology Inc. seems to have struck the right balance between investment in new technologies and conservative design decisions.
2012-09-17 Unified production cuts can ease DRAM industry's oversupply
According to DRAMeXchange, if Samsung, Micron and SK Hynix do not form a unified effort in cutting production or using the right product mix, the oversupply situation will likely extend until 2013.
2013-01-24 Uncertainty in DRAM market to persist this year
IHS forecasted that DRAM revenue this year will reach $30 billion, up 14 per cent from $26.4 billion last year, marking the first time since 2010 that global DRAM market revenue will rise.
2012-10-16 TSMC preps CoWoS test car with JEDEC Wide I/O DRAM Interface
The company's CoWoS technology provides the front-end manufacturing through chip on wafer bonding process before forming the final component.
2009-05-19 Trade group skeptical on Taiwan DRAM venture
The Taiwanese government plan to consolidate the island's DRAM industry around the state-backed Taiwan Memory Co. (TMC) remains unclear and could do more harm than good, according to a report released May 14 by a U.S.-Taiwan lobbying group.
2009-08-19 Trade group remains dubious of Taiwan DRAM plans
Despite the launch of Taiwan Memory Co. (TMC) and its subsequent investment in Japan's Elpida Memory, broader issues of consolidation and high levels of debt among Taiwan's DRAM players remain unresolved.
2005-02-11 Toshiba unveils high-density DRAM with floating-body cells
Toshiba Corp. has developed 128Mb silicon-on-insulator (SOI) DRAM with floating-body cells that the chip maker claims will help usher in embedded DRAM chips on SOI wafers.
2008-02-11 Toshiba touts 'fastest' embedded DRAM tech
Toshiba has developed what it claims to be the fastest circuit technology for embedded DRAM for System LSI, achieving a speed of 833MHz at 32Mbit density.
2004-01-02 Toshiba samples 512Mb XDR DRAM
Toshiba Corp. has started sampling its 512Mb XDR DRAMs with a maximum data rate of 3.2Gbps.
2003-08-06 Toshiba memory cell technology eyes DRAM apps
Toshiba has developed what it claims to be the world's first memory cell technology for embedded DRAM system LSIs on SOI wafers.
2002-06-17 Toshiba enhances embedded DRAM with SOI wafer
Toshiba Corp. has accomplished a breakthrough in embedding DRAM on SOI wafers, which ends the DRAM performance degradation typical of such integration.
2002-02-11 Toshiba cuts capacitor from DRAM cell design
Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.15m process technology.
2005-12-14 Toshiba builds 128Mb capacitorless DRAM
Toshiba has fabricated a 128Mb capacitorless DRAM on an SOI wafer and verified operation of the chip.
2008-05-28 Tessera, IPSG reach DRAM ITC Action settlement
Tessera Technologies has reached a settlement with International Products Sourcing Group , a respondent in the ITC action brought by Tessera against certain DRAM manufacturers.
2004-03-10 Taiwan outpaces other DRAM makers in 2003
Taiwan's row of 12-inch DRAM fabs is powering the island to a 105.3 percent year-on-year output growth - the strongest among the world's key DRAM producers.
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