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2013-03-19 EPC rolls out dev board for 100V eGaN FET apps
The EPC9010 development board a 100 V maximum device voltage, 7 A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 enhancement mode field effect transistor.
2011-08-22 eGaN FETs feature superior dV/dt immunity
EPC's second-generation 200V enhancement mode gallium nitride FETs tout high frequency switching.
2011-08-19 Development board features 200V eGaN FET
The EPC9004 is a 200V maximum input voltage board that can be used in solar microinverters and class D audio amplifiers.
2013-10-08 Dev't board features eGaN FETs in parallel operation
The EPC9017 is geared for high current, high step down voltage, buck intermediate bus converter (IBC) applications using eGaN FETs
2014-02-10 Dev't board features 100V eGaN FETs with 35A max output
The EPC9013 boasts a parallel configuration and can be operated as a buck, boost or bidirectional, as well as a half bridge for motor drives and isolated converter applications.
2015-09-16 120V, 20A eGaN IC optimised for wireless power transfer
The EPC2110 promises high performance as a result of its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a 1.35mm x 1.35mm package.
2015-07-16 EPC eGaN half bridge power ICs with integrated bootstrap FET
Geared for resonant wireless power transfer applications, the EPC2107 and EPC2108 promise to eliminate gate driver induced reverse recovery loses as well as the need for a high side clamp.
2015-12-14 Get 500W in converter with GaN (Part 2)
In Part 2, we tackle the key details of physical and electrical design, including layout, key waveforms and losses. We also summarise key potential improvements.
2013-05-16 Exploring the gallium nitride technology
Discover why GaN technology is touted to displace silicon MOSFET devices.
2014-07-10 Converters get boost from power transistors
Power transistors from EPC provide lower on-resistance, lower capacitance, higher current, and superior thermal performance, allowing power converters to perform with greater efficiency.
2015-12-07 Get 500W in converter with GaN (Part 1)
Part 1 covers brick technology, a comparison of eGaN FETs to silicon MOSFETS, a basic overview of the GaN-based eighth-brick design, and experimental results
2014-12-11 Half-bridge transistor touts 87 per cent system efficiency
The EPC2101 offers improved switching speed and thermal performance, as well as increased power density. It also aims to save space and lower system costs.
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