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2009-07-01 Memory vendors kick off NAND scaling race
The Intel-Micron duo, Samsung and Toshiba are racing each other for bragging rights in terms of NAND scaling leadership
2015-10-14 Laying down the scaling path for monolithic 3D
The IEEE S3S 2015 provided comprehensive coverage of R&D activities in the monolithic 3D space such as integrating a monolithic 3D device without changing the existing frontline fab process.
2007-10-17 IMEC extends CMOS scaling research to DRAM MIMCAP
IMEC announced it has initiated research on next-generation DRAM MIMCAP process technology as part of its (sub-)32nm CMOS device scaling program
2002-06-19 Materials transitions stalk CMOS scaling
With the transition to copper and low-k interconnects showing just how difficult changes in materials can be, technologists gathered at the Symposium on VLSI Technology to consider a brace of materials challenges?ranging from new gate oxides to SOI and strained-silicon channels.
2007-03-16 Electrical DFM promises gains in parametric yield
Design techniques are under greater pressure to provide equivalent scaling to enable the semiconductor road map to continue in a cost-effective way.
2005-08-16 Innovation drives SoC performance, keynoters say
While CMOS scaling continues to reduce costs, SoC performance improvements will depend on innovations that produce integrated design systems
2005-06-17 UMC shrinks Nitrided Gate-oxide thickness to 1.0nm
Taiwan semiconductor foundry United Microelectronics Corp. (UMC) revealed that its R&D team has reduced the equivalent oxide thickness (EOT) of nitrogen doped silicon oxide (Oxy-nitride, SiON) gate dielectrics to about 1.0nm using a new nitrogen profile engineering technique
2014-03-20 Samsung announces prod'n of 20nm-based 4Gb DDR3 memory
A key element of the latest design and manufacturing technology by Samsung is a modified double patterning and atomic layer deposition that allows for continued scaling
2005-12-09 NEC touts nanobridge, 45nm feats at IEDM
NEC has announced an enhanced three-terminal Nanobridge switch that will be the basis of a novel form of FPGA. The so-called cell-based IC is expected to be one-tenth the size of the equivalent FPGA
2013-03-07 Flip-chip platform to lift wafer shipments
Yole Dveloppement expects a threefold growth for the flip-chip platform to reach over 40 million 12" equivalent wafer start per year by 2018
2013-10-24 Xilinx, TSMC announce CoWoS 3D IC volume production
The programmable Virtex-7 HT family claims to be the industry's first heterogeneous 3D ICs in production that feature up to sixteen, 28Gb/s and seventyCtwo, 13.1Gb/s transceivers.
2014-03-06 Viewpoint: FD-SOI supports Moore's Law
STMicroelectronics' Laurent Remont believes that when it comes to price, power, and performance, fully-depleted silicon-on-insulator comes into its own as a viable option in the journey towards 10nm process technology.
2011-11-10 Understand Agile's Scrum technique for embedded software dev't
Learn how Scrum can keep team focused and organized when working on embedded systems project.
2015-09-21 TSMC heats up 10nm engine, preps 16nm for 2017
TSMC has gotten off to a slow start with its 16nm FinFET process and has also announced plans for specialty RRAM and MRAM memories that would act as alternatives to embedded flash.
2008-12-19 Trio develops 'world's smallest' FinFET SRAM cell
Toshiba, IBM and AMD have jointly developed an SRAM cell that has an area of only 0.128?m?, the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).
2009-01-06 Top 15 challenges to conquer for 22nm
What are the big challenges involved at the 22nm node?
2006-02-13 TI, MIT, DARPA collaborate on 65nm SRAM
Researchers from Massachusetts Institute of Technology presented an ultra low power 256Kb SRAM test device manufactured in Texas Instruments' 65nm CMOS process.
2003-12-11 TI's SETMOS said to extend CMOS life
Texas Instruments Inc., together with researchers at the Swiss Federal Institute of Technology of Lausanne and the U.S Air Force Research Laboratory, have described a potential way to use single electron transistors (SETs) to perform logic functions.
2002-02-08 TI unveils 90nm process technology
Texas Instruments Inc. has unveiled its 0.095m process technology, which will support transistor densities that allow chip-level multiprocessing, and require several techniques to manage power consumption.
2007-07-06 TI floating point DSCs enable power savings
Texas Instruments will start sampling in September a floating point digital signal controller that provides 300MFLOPS performance at 150MHz.
2005-04-26 Test suite checks VoIP-over-WLANs
VeriWave's VoIP-over-WLAN Analysis Test Suite assesses voice-quality metrics of realworld VoIP over WLAN networks.
2010-07-23 Taiwan maker demonstrates 3D vertical gate NAND device
The 3D NAND Flash uses Macronix's patented BE-SONOS (barrier engineering) charge-trapping technology and 3D decoding architecture.
2006-11-28 Synopsys develops supercomputer from Linux servers
Synopsys Inc. engineers built the 242nd most powerful supercomputer in the world using commodity Linux servers, according to a new ranking.
2005-09-27 Strained silicon to take IEDM spotlight
With high-k dielectrics apparently delayed beyond the 45nm node, this year's International Electron Devices Meeting will focus on second-generation strained-silicon techniques as the main pathway to faster transistors.
2006-08-16 Statistical timing revs for 45nm era
Statistical-timing analysis may represent the next major technology shift in nanometer IC implementation, but it's going nowhere fast without statistical-timing models.
2007-10-11 Starter kit eases evaluation of TI floating-point DSCs
TI has introduced the F28335 eZdspTM starter kit, which the company claimed makes it easy for engineers to evaluate and develop software on its new floating-point TMS320F2833x DSCs.
2015-01-20 Speed meets power in asynchronous SRAMs
At present, the asynchronous SRAM landscape is divided between two distinct product familiesfast and low power. This article tackles how to bridge this gap between speed and power.
2006-02-08 Sony touts Cell processor for real-time tasks
Real-time computing will bring a paradigm shift for both the PC and semiconductor industries, according to the president and CEO of Sony Computer Entertainment.
2008-02-29 Pre-zero crossing detector improves automotive relay performance
This paper discusses a method of developing a signal that will close, or open, a relay so that the contacts close, or open, when the ring generator's ring signal is at zero potential.
2007-09-28 Powering portable media players with innovative solutions
In the past, when system designers were handed a project, they basically purchased off-the-shelf discrete power solutions from the various vendors. The list of issues the power designer must consider has greatly increased as power systems have become more complicated.
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