Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > fet

fet What does FET stand for? Search results

?
?
What does FET stand for?
Field Effect Transistor (FET) is a kind of transistor which relies on an electric field to control the shape and the conductivity of a channel in a semiconductor material.
total search483 articles
2007-11-06 TI tips 2A, 3A SWIFT converters with dual outputs
Texas Instruments Inc. introduced four new dual-output SWIFT DC/DC step-down converters with integrated FETs that deliver 2A and 3A of continuous output current and support input voltages of 4.5V to 28V.
2002-02-15 TI JFET operates at 1.6GHz
Claimed to have the industry's highest gain bandwidth at 1.6GHz, the OPA657 JFET amplifier from the company's Burr-Brown product line is designed for optical networking, photodiode and data-acquisition applications.
2001-10-01 Thermal characterization techniques for GaAs FETs
This technical article deals with the proper modeling techniques that can simultaneously handle high-mesh transitions and temperature-dependent and anisotropic thermal properties for GaAs FET applications.
2005-02-14 SOT-89 FETs offer low cost, high linearity
Agilent announced two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5-by-4.1-by-1.5mm SOT-89 surface-mount package.
2000-02-24 SMPS MOSFET
This application note describes the IRFB31N20D, IRFS31N20D, and IRFSL31N20D HEXFET Power MOSFET devices for high-frequency dc-dc converter applications.
2002-10-09 Single control VVA
This application note describes two single bias attenuators designed by Alpha to alleviate dual biasing requirement.
2002-10-09 Single control VVA
This application note discusses the circuit implementation of a single bias 0dB to 35dB dynamic range VVA.
2013-04-17 Single channel CMOS driver for microwave switching
The MADR-009269 is a high performance single channel CMOS Driver that is used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators.
2001-04-20 Simple and inexpensive high-efficiency power amplifier using new APT MOSFETs
This application note describes a simple and inexpensive high-efficiency RF power amplifier based on Advanced Power Technology's RF power MOSFETs.
2003-05-08 Siliconix JFETs eliminate latch-up
Vishay Siliconix has released a new series of JFETs that eliminates latch-up in amp designs.
2002-10-09 Silicon drivers for commercial IC products
This application note presents various CMOS chips utilized with GaAs IC switches and digital attenuators.
2006-10-16 Selecting the right linear regulator
Each linear regulator has its advantages and disadvantages. Designers determine whether a certain type is appropriate for the application based on dropout voltage, ground current and stability-compensation method requirements.
2000-05-01 Schottky diodes vs. synchronous rectification using FETs
Though Schottky diodes continue to be the dominant solution for rectifying DC-DC converters, FETs are becoming common as an efficient alternate. The paper provides guidelines and test parameters to help engineers choose the right solution under specific circumstances.
2003-07-16 Scalable power management for tomorrow's microprocessors
Tomorrow's microprocessors will demand robust dc-dc power management solutions that combine the best in technology with the best in design techniques.
2008-10-01 Safety comes first for MIC2310 controller
Micrel introduces the MIC2310, a single-FET, constant power-limit hot-plug controller.
2003-03-20 Richardson to distribute Celeritek RF line globally
Celeritek Inc. has named Richardson Electronics Ltd as the sole worldwide distributor for its complete line of RF semiconductor products.
2005-08-10 Revised model-based DSP tools pitch higher performance
The 2005.3 versions of AccelChip DSP synthesis tool and related intellectual property core generators for MATLAB model-based design of DSP products promise higher performance circuits and higher speed
2013-01-28 Renesas' new MOSFETS boast 50% lower On-resistance
Renesas' latest MOSFETS feature a low on-state resistance of 0.72M? (typical value) for 30 V and a high-efficiency, small surface mount package (8-pin HVSON).
2003-06-12 Remaining battery power display: Monolithic IC MM1305
This application note discusses the MM1305, which is designed for detecting battery voltage and current variations, at the same time displaying the values, in portable systems.
2003-03-17 Reduce power-supply effects on ADSL data rates
Careful selection of the supply's switching frequency can improve the data rate, size, power consumption, and cost of ADSL modems.
2001-09-21 Recommended wire bonding for Excelics FETs
This application note illustrates the recommended wire bonding techniques for Excelics' FETs.
2001-04-06 Recommended ESD protection and circuit placement for the DS2438 in a Li+ cell pack
This application note addresses the implementation of a DS2438-based Li-ion battery pack with low-side n-channel safety FETs. It presents a reference design that focuses on Li+ cell safety and ESD hardness.
2006-02-03 PWM controllers with 0.5% system accuracy
Intersil has introduced a new family of VR11 pulse width modulation controllers with the industry's highest accuracy.
2004-01-12 Protein recognition tapped to build nanotube FETs
Molecular self-assembly assisted by DNA and protein recognition might provide a route to complex logic and memory circuits built with nanotubes, a project in Haifa, Israel, suggests.
2014-08-11 Protection switch aimed at portable, adapter-powered devices
TI's TPS25940 and TPS25942 ICs include back-to-back FETs to provide bidirectional current control, while reducing system size by 50 per cent compared to discrete solutions.
2003-06-12 Protection of Li-ion batteries (two-cells in series): Monolithic IC MM1292, 1302
This application note discusses the MM1292, which is targeted for Li-ion battery protection during excessive overcharging and overcurrent conditions.
2003-06-12 Protection of Li-ion batteries (one-cell): Monolithic IC MM1301
This application note discusses the MM1301, which is targeted for high-precision Li-ion battery protection against excessive overcharging and overcurrent.
2003-06-12 Protection of Li-ion batteries (one cell): Monolithic IC MM1291
This application note discusses the MM1291, which is targeted for Li-ion battery protection during excessive overcharging and overcurrent conditions.
2002-09-01 Protection IC ensures battery reliability
Specific IC with protection loop guarantees defense against overcharging, overdischarging, and overcurrent problems of lithium batteries.
2000-12-01 Protecting IGBTs and MOSFETs from ESD
This application note discusses how HEXFET users can implement and benefit from International Rectifier's ESD control programs.
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top