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2008-12-23 Rugged RF power transistor released
HVVi Semiconductors Inc. has released the company's first product for radar applications in the UHF band that uses its High Voltage Vertical Field Effect Transistor architecture. Operating across the 420-470MHz band, the HVV0405-175 is a fully qualified 175W RF power transistor optimized for gain and ruggedness.
2005-04-07 Philips, Penn State refine surface potential transistor model
Scientists from Philips Research and the Pennsylvania State University have developed a model of MOSFET behavior based on the extensive use of the surface potential measurements.
2005-07-18 Organic molecule switches like a transistor
University researchers have successfully demonstrated a single-molecule switch and transistor
2015-02-24 Novel transistor exhibits quantum spin Hall effect
MIT researchers discovered an innovative transistor that harnesses a new effect, called the quantum spin Hall effect, to create a topological field effect transistor (TFET).
2011-05-03 ITRS chairman: Tunnel FET possible transistor option
ITRS chairman, Paolo Gargini, believes that a field effect transistor (FET) combined with quantum tunneling can reduce power consumption, while maintaining adequate performance.
2007-06-15 Infineon unveils power-saving transistor architecture
Infineon has developed a new transistor architecture that can improve energy efficiency
2011-02-01 Georgia Tech develops top-gate organic field-effect transistor for plastic electronics
Researchers at Georgia Tech have developed a top-gate organic field-effect transistor with a bilayer gate insulator that gives excellent stability and performance for use on plastic electronics.
2012-06-25 Design reduces nanowire transistor footprint
Researchers from the A*STAR Institute of Microelectronics have integrated two transistors onto a single vertical silicon nanowire, pushing the areal density limit of nanowire transistors even further.
2005-08-22 Constructing the next transistor
The planar metal-oxide-semiconductor field-effect transistor appears to be approaching the end of its useful life
2002-09-16 AMD develops technology for transistor enhancement
AMD said that they have fabricated the smallest double-gate transistors reported to date using industry standard technology.
2011-06-24 Power transistor 2011 market to cross $13 billion
IC Insights sees a growth in the power transistor market reaching annual sales of $13 billion this year. This growth is fueled by automotive systems and portable products, among others
2008-12-23 IBM demos 'world's fastest' graphene transistor
IBM researchers announced that they have demonstrated the operation of graphene field-effect transistors at GHz frequencies and achieved the highest frequencies reported so far using this novel non-silicon electronic material
2002-09-02 Zetex MOSFET boost circuit efficiency
The ZXMP3A17E6 30V, p-channel MOSFET features low on-resistance with fast switching to ensure high efficiency operation and higher current handling.
2003-04-02 Zetex H-bridge MOSFET replaces four discrete devices
The ZXMHC6A07T8 MOSFET H-bridge of Zetex Semiconductors comes in a 7.3-by-6.7mm SM8 package.
2002-08-21 Vishay rolls temperature, current sensing MOSFETs
Vishay Siliconix has announced the introduction of seven new temperature- and current-sensing TrenchFETs in a thermally-enhanced D2PAK package.
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.
2002-05-22 Toshiba ships extended C-band GaAs FET
Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range.
2002-06-20 Toshiba Ku-band FET produces 18W
The TIM1414-18L GaAs FET from Toshiba Corp. produces an output power of 18W in the 14GHz to 14.5GHz range, and is targeted for use in solid-state power amplifiers for Ku-band satellite transmitters and VSATs.
2002-01-18 Toshiba J-FETs feature 0.395mm height
The 2SK3376TK and 2SK3582TK are claimed to be the world's thinnest junction FETs (J-FETs) in a lead package.
2002-02-15 TI JFET operates at 1.6GHz
Claimed to have the industry's highest gain bandwidth at 1.6GHz, the OPA657 JFET amplifier from the company's Burr-Brown product line is designed for optical networking, photodiode and data-acquisition applications.
2003-07-04 TAEC GaAs FET targets satcom systems
Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs.
2002-02-08 STMicro MOSFETs offer 30 percent lower on-resistance
STMicroelectronics has introduced three high-voltage n-channel power MOSFETs that feature 30 percent lower on-resistance than previous generation of products.
2005-02-14 SOT-89 FETs offer low cost, high linearity
Agilent announced two new members of its family of high-linearity E-pHEMT FETs in the industry-standard 4.5-by-4.1-by-1.5mm SOT-89 surface-mount package.
2005-01-05 Soitec, ADF to develop MuGFETs for 45nm technology
In an effort to accelerate the development of new-generation transistors, Soitec Group has disclosed its participation as the SOI substrate supplier in a development program led by Advanced Technology Development Facility (ATDF), the new independent subsidiary of Sematech for advanced semiconductor R&D.
2003-03-14 Sirenza receives patent for SiSiC devices
Sirenza Microdevices Inc. has been issued U.S. Patent No. 6,521,923 entitled "Microwave Field Effect Transistor Structure on Silicon Carbide."
2002-07-09 Siliconix samples 30V MOSFETs for single, multiphase power supply circuits
Vishay Siliconix has began sampling a series of 30V n-channel TrenchFET power MOSFETs for use in single or multiphase power supply circuits in core voltage dc/dc converters.
2002-07-22 Siliconix MOSFETs target dc/dc conversion apps
Vishay Siliconix has launched a pair of 30V power MOSFETs that are targeted for use in dc/dc conversion apps.
2002-09-27 Siliconix MOSFETs suit POL dc/dc conversion apps
The Si7882DP, Si7940DP, and Si7540DP PowerPAK power MOSFETs from Siliconix Inc. are intended for point-of-load (POL) dc/dc conversion applications in fixed telecom systems.
2002-06-03 Siliconix MOSFETs eye mobile designs
The Si8405DB and Si8401DB MOSFETs, and DG3000 analog switch from Vishay Siliconix are intended for mobile phone designs.
2003-05-08 Siliconix JFETs eliminate latch-up
Vishay Siliconix has released a new series of JFETs that eliminates latch-up in amp designs.
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