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2002-02-18 Oki Electric ships fully depleted SOI LSIs
Oki Electric Ind. Co. Ltd has commenced commercial shipment in volume what it claims to be the first fully depleted silicon-on-insulator LSIs.
2012-10-23 ST, Soitec roll 28nm FD-SOI CMOS process thru CMP
ST's CMOS 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) process that uses silicon substrates from Soitec is available for prototyping to universities, research labs and design firms.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2002-11-04 EM Microelectronic to produce FD SOI-based chips
EM Microelectronic has announced that it is ready to start producing ultra-low voltage and ultra-low-power IC using FD SOI.
2015-08-05 CoolCube 3D interconnect targets FinFET process
The research institute demonstrated the feasibility of CoolCube used to stack FinFET layers on its 300mm production line as well as with fully-depleted silicon-on-insulator manufacturing processes.
2004-01-26 MEMC to adopt SiGen SOI wafer technology
MEMC Electronic Materials Inc. has entered into a licensing agreement with Silicon Genesis Corp.
2012-12-20 Globalfoundries consider SSRW tech as 3rd option
The chip foundry is evaluating a third manufacturing option to follow conventional bulk planar CMOS based on a super-steep retrograde well approach.
2002-09-30 Applied Materials technology improves Soitec productivity
Soitec has achieved a reduction in cycle time for its 300mm Smart Cut SOI process as a result of enhancements made by Applied Materials Inc. in its Quantum II ion implant system.
2002-11-12 AMD outlines restructuring plan
Advanced Micro Devices Inc. is working on a broad restructuring plan that will slash $100 million from its quarterly operating costs in 2003, cut $100 million from its capital expenditures both this year and next, and entail significant layoffs by June.
2002-10-18 AmberWave cuts SiGe layer from strained-silicon process
AmberWave Systems Corp. claims to have worked out a form of strained silicon that removes the SiGe layer and provides an ultrathin silicon top layer to build high-performance devices.
2014-10-10 Rising costs drive chip companies to alternate routes
The low cost of capital is fuelling M&A across all industries, and the rising cost and complexity of making chips is pouring gas on the fire in semiconductors.
2014-03-06 Viewpoint: FD-SOI supports Moore's Law
STMicroelectronics' Laurent Remont believes that when it comes to price, power, and performance, fully-depleted silicon-on-insulator comes into its own as a viable option in the journey towards 10nm process technology.
2015-07-21 Globalfoundries plans to start FD-SOI prod'n in Europe
Globalfoundries is investing $250 million to develop and its own variant of a fully-depleted silicon-on-insulator (FD-SOI) manufacturing process and get it into production in Europe.
2013-06-17 UMC, IBM augment FinFET venture to 10nm
UMC will send researchers to work on the development of 10nm FinFET process technology with IBM.
2012-07-03 UMC looks to catch up with competitors with IBM deal
UMC looks to drastically improve its position with 20nm low power process with FinFET development license from IBM.
2014-04-08 Taking a closer look at 20nm bulk CMOS
Foundry vendors planned to migrate to 16/14nm FinFETs rather than 20nm bulk CMOS, but the reality of FinFETs is that the present device structures do not give cost competitive products through 4Q17.
2015-11-11 Synopsys, GlobalFoundries team up for 22nm FD-SOI sol'n
The Synopsys Galaxy Design Platform, enabled for the GlobalFoundries' 22FDX platform, claims to offer FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies.
2016-04-11 SuVolta: The demise of the promising start-up
SuVolta said it was going after opportunities in mobile processors, DRAM and IoT but was probably not helped by the fact that the Japanese semiconductor industry was experiencing its own turmoil.
2013-09-06 Suvolta enlists Fujitsu for image processor IC production
SuVolta's MB86S22AA Milbeaut image processor IC includes an ARM Cortex-A5MP and is capable of performing lens distortion and lens resolution correction at a rate of 12 fps across 24 megapixels.
2013-11-08 ST, Memoir Systems combine memory, process tech
When integrated into products made using ST's FD-SOI, Memoir's Algorithmic Memories claim to deliver uncompromised performance as a result of FD-SOI's recognised power and performance advantages.
2013-02-22 ST's FDSOI process churns out 3GHz processor engines
The 28nm version of STMicroelectronics' process has produced application processor "engines" that are capable of operating at clock frequencies in excess of 3GHz.
2013-03-20 ST takes 2G and 3G, Ericsson gets LTE modem
CEO Carlo Bozotti promised support for existing products and customers of ST-Ericsson but has revealed STMicroelectronics is wary of an increasingly vertically-integrated mobile devices market.
2012-12-13 ST ready to roll out 28nm FDSOI
ST boasted that the FDSOI planar process holds advantages over other manufacturing process variants in terms of trade-offs between performance, power consumption and manufacturability.
2010-06-09 ST readies 20nm tape out in 2012
STMicroelectronics NV chief technology officer Jean-Marc Chery announced the company will be ready to tape out designs using a 20nm CMOS low-power (LP) process technology in Q4 2012.
2014-04-30 ST pares R&D, centres on embedded processing
The Swiss chipmaker's first quarter results showed a 0.7 per cent year-over-year revenue improvement, driven by its joint-venture exit and operating expenses adjustments. ST CEO Carlo Bozotti said the company will move forward with a focus on embedded processing solutions.
2014-05-16 ST finds FD-SOI partner in Samsung
Samsung will work with ST's 28nm FD-SOI design platform, making its foundry services accessible to the broader semiconductor industry. The companies hope their partnership will encourage designers to adopt the process.
2013-05-20 ST bags design wins for 28nm FDSOI
ST has claimed three design wins for its FDSOI manufacturing process, a move that could draw out support from EDA software and IP providers.
2015-04-20 Samsung details 14nm FinFET strategy
The Korean company made significant headway when it shipped its first 14nm FinFET chip, beating TSMC to become the second chipmaker after Intel to pave the road for 14nm technology.
2011-02-24 Samsung chief cites challenges facing IC design
IC designers must address power consumption issues, the need for new transistor structure and memory types, delayed development of 3D TSV-based devices, and calls for circuit design breakthroughs.
2013-06-20 Rambus settles with ST, signs IP deal
Agreement covers FDSOI design, security, memory and interface technologies and settles all outstanding claims.
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