Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Advanced Search > gaas fet

gaas fet Search results

?
?
total search43 articles
2005-09-14 Toshiba touts power output of GaN-based FET
Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications
2002-05-22 Toshiba ships extended C-band GaAs FET
Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range.
2007-06-25 Toshiba launches GaAs FETs, RF devices
TAEC featured an array of C-, X- and Ku-band gallium arsenide (GaAs) FETs developed by Toshiba Corp. as well as a broad line-up of RF and small signal devices at this year's IEEE MTT-S event
2002-06-20 Toshiba Ku-band FET produces 18W
The TIM1414-18L GaAs FET from Toshiba Corp. produces an output power of 18W in the 14GHz to 14.5GHz range, and is targeted for use in solid-state power amplifiers for Ku-band satellite transmitters and VSATs.
2001-10-01 Thermal characterization techniques for GaAs FETs
This technical article deals with the proper modeling techniques that can simultaneously handle high-mesh transitions and temperature-dependent and anisotropic thermal properties for GaAs FET applications.
2003-07-04 TAEC GaAs FET targets satcom systems
Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs.
2001-06-04 Suggested circuit controller for a dual-control FET VVA in AGC temperature compensation
This application note describes a useful broadband technique of temperature compensation for GaAs FET amplifiers.
2002-10-24 Positive voltage operation of GaAs control ICs
This application note describes the process of positive voltage operation of GaAs control ICs
2003-06-27 Mitsubishi GaAs FET targets 14GHz apps
The Semiconductor Division of Mitsubishi Electric & Electronics Inc. has introduced two GaAs HFET products
2003-01-21 Mitsubishi Electric GaAs FETs exhibit high linearity
The MGF095XP power GaAs FET family exhibits high linearity performance at frequencies from cellular bands through U-NII band.
2012-06-28 GaAs FETs target microwave radios
Toshiba's TIM5359-16EL and TIM5964-16EL gallium arsenide FETs support point-to-point and point-to-multipoint terrestrial communications, and BUCs support satellite communications.
2010-06-11 GaAs FET power amps rated for 18W, 30W
Toshiba America Electronic Components Inc. (TAEC) has expanded its Ku-Band GaAs FET lineup with two higher output power devices rated for 18- and 30W.
2007-12-19 GaAs FET amplifier handles 1.5GHz
Stealth Microwave has introduced Model SM0520-36/36H, a 500-2,000MHz solid state GaAs FET amplifier designed for multipurpose use in multiple wireless and military markets.
2008-09-09 GaAs FET amplifier gears up for military, wireless apps
Stealth Microwave has designed Model SM06927-36H, a 690-2,700MHz solid-state GaAs FET amplifier designed for multipurpose use in multiple wireless and military markets.
2007-11-26 GaAs FET amp targets European WiMAX transceiver stations
Mitsubishi Electric Corp. has developed an internally impedance matched high output power GaAs FET for 3.6GHz band WiMAX base transceiver stations in Europe.
2005-09-15 FET surpasses GaAs FETs
Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications
2001-05-29 Drivers for GaAs FET switches and digital attenuators
This application note provides information on M/A-COM's SW-109 and SWD-119 drivers and other commercially available digital logic chips for control of switches and digital attenuators.
2001-06-05 Drivers for GaAs FET MMIC switches and digital attenuators
This application note provides technical and application information to simplify the use of drivers for M/A-COM's FET MMIC switches and digital attenuators
2008-04-02 50W GaAs FET power amp aims at 700MHz apps
A 50W GaAs FET solid-state power amplifier designed for next-generation 700MHz applications has been introduced by Stealth Microwave Inc.
2010-07-05 GaAs MMICs enable signal pre-amplification
Freescale Semiconductor's ultralow-noise GaAs chips promise enable pre-amplification of radio signals without also magnifying noise
2006-12-01 Advancing GaAs potential via pHEMT/HBT mix
Monolithic pHEMT/HBT ICs represent a significant step in advancing the potential for GaAs capabilities by maximizing the advantages of both bipolar and FET circuits.
2002-10-24 IC products with GaAs integral drivers (on-chip
This application note describes Alpha's IC products that have on-chip translators.
2002-10-24 Commercial IC products with GaAs integral drivers (on-chip
This application note describes the voltage requirements, power consumption, user precautions of commercial IC products with GaAs integral drivers (on-chip
2013-04-17 Single channel CMOS driver for microwave switching
The MADR-009269 is a high performance single channel CMOS Driver that is used to translate TTL control inputs into complementary gate control voltages for GaAs FET microwave switches and attenuators.
2003-09-09 Ixys strengthens RF offering with acquisition
Ixys Corp. has acquired Microwave Technology Inc. (MwT), a manufacturer of GaAs field effect transistors, pseudomorphic high electron mobility transistors and microwave monolithic ICs
2004-05-03 CMY212/CMY213 Application Note
This app note discusses how to integrate an external IF amplifier to the CMY212/CMY213 device to achieve high input operation.
2005-10-25 Chipset targets millimeter wave apps
Mimix Broadband announced the introduction of a gallium arsenide MMIC 13GHz/15GHz chipset that consists of a highly integrated image reject receiver and transmitter, and compact, two stage power amplifier.
2003-09-19 Application Note for RFS1006 Evaluation Board
This application note provides users of the RFS1006 GaAs MESFET power amplifier with a board layout diagram that indicates the voltage, ground and RF connectors for proper connection
2003-09-19 Application Note for RFS1003 Evaluation Board
This application note provides users of the RFS1003 GaAs MESFET power amplifier with a board layout diagram that indicates the voltage, ground and RF connectors for proper connection
2002-10-09 Silicon drivers for commercial IC products
This application note presents various CMOS chips utilized with GaAs IC switches and digital attenuators
Bloggers Say

Bloggers Say

See what engineers like you are posting on our pages.

?
?
Back to Top