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2002-01-31 WIN receives certification for GaAs HBT
Taiwan foundry WIN Semiconductors Corp. has received certification from a major Japanese IDM house for its 25m HBT (heterojunction bipolar transistor) used in a Bluetooth PA.
2007-10-12 TriQuint, Win Semi survive GaAs fab shakeout
In the face of the expected shakeout in the GaAs foundry business, U.S.-based TriQuint Semiconductor remains the largest player in this segment and Taiwan's Win Semiconductor is still in the game.
2006-06-19 TriQuint unveils multiport GaAs switches
TriQuint's new multiport switches are targeted at high-reliability applications such as electronic warfare signal receivers and wideband communications systems.
2002-05-03 TriQuint to acquire Infineon's GaAs business
TriQuint Semiconductor Inc. has revealed that it will acquire Infineon Technologies AG's GaAs semiconductor business.
2008-06-26 Toshiba updates GaAs FETs portfolio
Toshiba America Electronic Components Inc. has expanded its gallium arsenide (GaAs) FETs lineup with four new devices optimized for power efficiency.
2002-05-22 Toshiba ships extended C-band GaAs FET
Claimed to be the industry's first 60W internally-matched C-band GaAs FET, the TIM5964-60SL-251 FET from Toshiba America Electronic Components Inc. operates in the 5.9GHz to 6.75GHz range.
2007-06-25 Toshiba launches GaAs FETs, RF devices
TAEC featured an array of C-, X- and Ku-band gallium arsenide (GaAs) FETs developed by Toshiba Corp. as well as a broad line-up of RF and small signal devices at this year's IEEE MTT-S event.
2004-11-11 Toshiba announces smallest GaAs MESFET switch for Bluetooth, WLAN apps
Toshiba released a small, low-profile GaAs MESFET SPDT switch that is suited for use in multi-band/mode cellular ASMs, Bluetooth modules and WLAN apps.
2005-07-29 Three firms account for the preponderance of GaAs wafer supplies
Sumitomo Electric Industries (SEI), Freiberger Compound Materials (FCM) and Hitachi Cable accounted for over 90 percent of wafers shipped into the merchant market during 2004, according to Strategy Analytics' latest study on the semi-insulating GaAs bulk substrate market, "Markets for SI GaAs Substrates: 2004-2009,".
2001-10-01 Thermal characterization techniques for GaAs FETs
This technical article deals with the proper modeling techniques that can simultaneously handle high-mesh transitions and temperature-dependent and anisotropic thermal properties for GaAs FET applications.
2001-06-15 Techniques to achieve high-isolation with GaAs MMIC switch chips
This application note describes techniques to obtain the maximum possible isolation when using GaAs MMIC switch chips.
2003-07-04 TAEC GaAs FET targets satcom systems
Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs.
2008-01-22 Solid-state GaAs amplifier delivers high linearity
The SM09296-47L from Stealth Microwave is a 925-960MHz solid state GaAs amplifier designed for the cellular/GSM telephony market.
2006-08-22 Skyworks unrolls GaAs attenuators WiMAX, WLAN apps
Skyworks has introduced GaAs attenuators with distortion performance for various types of linear applications including UMTS, W-CDMA, WiMAX and WLAN.
2001-09-20 Silicon PIN diode and GaAs MESFET switches and their effects on linearity of digital
This application note discusses the linearity requirements for the RF sections of digital communications links and compares the low-distortion performance of silicon PIN diode and GaAs MESFET switches.
2003-02-05 SiGe transistors match noise level of GaAs devices
Toshiba Corp. has developed high frequency SiGe transistors that are capable of matching the low noise level of GaAs devices.
2010-03-03 RFMD, SELEX extend GaAs MMIC partnership
SELEX Galileo and RFMD have extended of their collaboration to develop high-frequency GaAs MMIC solutions focused on SELEX's electronically-scanned phased array radar systems.
2010-10-04 RFMD expands foundry services to include GaAs tech
RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers.
2008-03-05 RFMD completes Filtronic acquisition, gains GaAs fab
RFMD has completed the acquisition of Filtronic Compound Semiconductors, and has assumed ownership of the latter's 6-inch GaAs wafer fab.
2002-01-07 RF Micro starts production in second GaAs HBT facility
RF Micro Devices Inc. has started production at its second GaAs HBT fabrication facility, located in Greensboro, North Carolina.
2004-12-14 Power control with the MRFIC0913 GaAs IPA and MC33169 support IC
This app note addresses the particulars of transmit waveform shaping and power control as applied to GSM TDMA systems using the MFRIC0913 GaAs integrated power amplifier (IPA) combined with the Motorola MC33169 GaAs power amplifier support IC.
2002-10-24 Positive voltage operation of GaAs control ICs
This application note describes the process of positive voltage operation of GaAs control ICs.
2001-06-04 Positive voltage control of GaAs MMIC control devices
This application note discusses a configuration that allows the user to drive GaAs control devices with standard CMOS logic gates.
2007-07-03 Philips sells shares in GaAs IC manufacturer
Royal Philips Electronics disclosed it had sold its controlling stake in Ommic S.A.S. to Financi�re Victoire SAS of France for an undisclosed amount.
2013-06-17 Northrop Grumman rolls GaAs MMIC power amplifiers
The APH667 and the APH668 are GaAs-based broadband, three-stage amplifier devices that operate from 81 to 86GHz and 71 to 76GHz, respectively.
2011-12-26 New technique simplifies GaAs etching
A research team developed a method to chemically etch patterned arrays in GaAs used in solar cells, lasers, LEDs, FETs, capacitors and sensors.
2008-10-08 Navy taps TriQuint GaAs amp manufacturing tech
The Office of Naval Research has awarded TriQuint Semiconductor a 21-month, $4.5 million contract to advance manufacturing methods used to produce high-power, high-frequency GaAs amplifiers.
2008-05-27 Mitsubishi offers Ku band low-noise GaAs HEMT
Mitsubishi Electric Corp. has developed a full-mold package low noise Ku1 band GaAs high electron mobility transistor (HEMT), the MGF4935AM that is highly suitable for low-noise amplifiers in Direct Broadcast Satellite (DBS) reception systems and Very Small Aperture Terminal (VSAT) systems.
2003-06-27 Mitsubishi GaAs FET targets 14GHz apps
The Semiconductor Division of Mitsubishi Electric & Electronics Inc. has introduced two GaAs HFET products.
2003-01-21 Mitsubishi Electric GaAs FETs exhibit high linearity
The MGF095XP power GaAs FET family exhibits high linearity performance at frequencies from cellular bands through U-NII band.
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