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1999-11-24 Handling gallium arsenide die
Gallium arsenide die has physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations will result in a smooth prototype or production flow. This application note discusses handling, assembly procedures, visual inspection criteria, and electrostatic discharge precautions.
2001-05-24 Electrical behavior of a new gallium arsenide power Schottky diode
This application note presents gallium arsenide (GaAs) power Schottky diodes with blocking voltages of some hundreds of volts.
2005-08-08 Vishay to acquire CyOptics' Israel assets
Vishay Intertechnology Inc. announced that Vishay Israel Ltd has signed a letter of intent regarding the acquisition of the assets of CyOptics Israel Ltd, the Israeli subsidiary of CyOptics Inc.
2006-06-19 TriQuint unveils multiport GaAs switches
TriQuint's new multiport switches are targeted at high-reliability applications such as electronic warfare signal receivers and wideband communications systems.
2013-05-27 TriQuint expands GaN product, process line
The firm's latest GaN amplifiers and transistors along with two GaN processes claim to offer performance, size and durability advantages for communications, radar and defence RF systems.
2008-06-26 Toshiba updates GaAs FETs portfolio
Toshiba America Electronic Components Inc. has expanded its gallium arsenide (GaAs) FETs lineup with four new devices optimized for power efficiency.
2003-09-04 Toshiba power amplifier suits 5GHz WLAN apps
Toshiba Corp. has extended its line of RF GaAs HBT MMICs to include a power amplifier specifically developed for use in 5GHz WLAN systems.
2003-10-03 Thermal Considerations for PAs
This application note describes the thermal considerations for ANADIGICS power amplifiers.
2003-07-04 TAEC GaAs FET targets satcom systems
Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs.
2012-12-13 Study: InGaAs alternative to silicon at 22nm
MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22nm.
2010-10-04 RFMD expands foundry services to include GaAs tech
RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers.
2011-12-23 RF power market gains from wireless infrastructure
GaN, the material of choice for RF power semiconductors, is also seen to expand its market share next year.
2002-11-27 Researchers foresee availability of low-cost Geiger counters
GaAs diodes are being used to build real-time nuclear-radiation detectors that their inventors promise will be as small and cheap as today's non-real-time "dosimeter" badges.
2005-03-21 Pre-driver PAs power cellular base stations
RFMD's two new GaAs HBT pre-driver PAs are designed to lower the total cost of implementation for manufacturers of cellular base stations.
2005-03-25 PAs lower implementation cost
The new half-watt and two-watt single-stage devices from RFMD lower the total cost of implementation for manufacturers of cellular base stations.
2005-03-22 PA + driver amp deliver 1W
Mimix Broadband introduced a GaAs MMIC three-stage balanced PA and complementary three-stage driver amplifier that both use 0.15?m gate length GaAs pHEMT device model technology.
2011-11-24 Optocouplers operate from -40C to 125C
The FODM8801 consists of an aluminum gallium arsenide infrared LED optically coupled to a phototransistor.
2003-03-31 Mitsubishi to retain photonic, RF components in IC unit
Mitsubishi will retain its optoelectronic and microwave/RF businesses in a new Semiconductor Division within Mitsubishi Electric & Electronic USA Inc.
2003-06-27 Mitsubishi GaAs FET targets 14GHz apps
The Semiconductor Division of Mitsubishi Electric & Electronics Inc. has introduced two GaAs HFET products.
2005-09-16 Mimix's new GaAs amp with self-biased, single supply design
Mimix Broadband introduced a GaAs two-stage low noise gain block amplifier that has a self-biased, single supply design
2005-08-11 Mimix's integrated Rx/Tx chipset targets 18GHz to 25GHz
Mimix's new GaAs MMIC sub-harmonically pumped receiver and transmitter devices integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier and a low noise amplifier for the receiver, and an output amplifier for the transmitter.
2006-02-02 LNAs support satcom, radio systems
Mimix expanded its product line of gallium arsenide monolithic microwave IC low noise amplifiers with three new amps.
2006-06-19 LNAs for cellular, WiMAX start sampling
RFMD has started sampling five new GaAS pHEMT low noise amplifiers for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards.
2005-07-15 Ka-band PAs and doubler target wireless communications apps
Mimix Broadband introduced a new line of Ka-band GaAs monolithic microwave integrated circuit products, including power amplifiers and a doubler, covering the 27GHz to 34GHz frequency bands
2004-01-16 Hybrid bipolar transistor emits light
Integrated optoelectronics could get a boost from the discovery of a bipolar transistor that emits light from its base region.
2005-04-20 High-power amp IC boosts signals for military, communications apps
Mimix Broadband introduced a GaAs MMIC two-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing.
2005-09-05 HBTs deliver 0.75dB noise at 6GHz
Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices.
2008-06-20 GaN transistors roll from TriQuint Semiconductor
TriQuint Semiconductor has released the first of its gallium nitride power transistors for a wide range of high frequency applications including mobile base station, defense and space communications systems
2006-08-23 GaN transistor amp delivers 400W for 3G base stations
NEC Corp. has announced the development of a compact GaN power transistor amplifier, said to have the world's highest output power level of 400W while featuring low-distortion characteristics, targeted at 3G base stations.
2000-03-20 GaAs optoelectronic ICs for Gigabit Ethernet
This paper describes the Gigabit Ethernet market and the various GaAs ICs and OEICs available.
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