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| 1999-11-24 | Handling gallium arsenide die Gallium arsenide die has physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations will result in a smooth prototype or production flow. This application note discusses handling, assembly procedures, visual inspection criteria, and electrostatic discharge precautions. |
| 2001-05-24 | Electrical behavior of a new gallium arsenide power Schottky diode This application note presents gallium arsenide (GaAs) power Schottky diodes with blocking voltages of some hundreds of volts. |
| 2005-08-08 | Vishay to acquire CyOptics' Israel assets Vishay Intertechnology Inc. announced that Vishay Israel Ltd has signed a letter of intent regarding the acquisition of the assets of CyOptics Israel Ltd, the Israeli subsidiary of CyOptics Inc. |
| 2006-06-19 | TriQuint unveils multiport GaAs switches TriQuint's new multiport switches are targeted at high-reliability applications such as electronic warfare signal receivers and wideband communications systems. |
| 2008-06-26 | Toshiba updates GaAs FETs portfolio Toshiba America Electronic Components Inc. has expanded its gallium arsenide (GaAs) FETs lineup with four new devices optimized for power efficiency. |
| 2003-09-04 | Toshiba power amplifier suits 5GHz WLAN apps Toshiba Corp. has extended its line of RF GaAs HBT MMICs to include a power amplifier specifically developed for use in 5GHz WLAN systems. |
| 2003-10-03 | Thermal Considerations for PAs This application note describes the thermal considerations for ANADIGICS power amplifiers. |
| 2003-07-04 | TAEC GaAs FET targets satcom systems Toshiba America Electronic Components (TAEC) Inc. has released what it claims to be the industry's first 90W c-band GaAs FET that is suitable for use in SSPAs. |
| 2012-12-13 | Study: InGaAs alternative to silicon at 22nm MIT researchers claim their indium gallium arsenide transistors can challenge silicon at 22nm. |
| 2010-10-04 | RFMD expands foundry services to include GaAs tech RF Micro Devices Inc. has added Gallium Arsenide technology to its foundry services portfolio, and will start offering a full suite of GaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) technologies to customers. |
| 2002-11-27 | Researchers foresee availability of low-cost Geiger counters GaAs diodes are being used to build real-time nuclear-radiation detectors that their inventors promise will be as small and cheap as today's non-real-time "dosimeter" badges. |
| 2005-03-21 | Pre-driver PAs power cellular base stations RFMD's two new GaAs HBT pre-driver PAs are designed to lower the total cost of implementation for manufacturers of cellular base stations. |
| 2005-03-25 | PAs lower implementation cost The new half-watt and two-watt single-stage devices from RFMD lower the total cost of implementation for manufacturers of cellular base stations. |
| 2005-03-22 | PA + driver amp deliver 1W Mimix Broadband introduced a GaAs MMIC three-stage balanced PA and complementary three-stage driver amplifier that both use 0.15?m gate length GaAs pHEMT device model technology. |
| 2011-11-24 | Optocouplers operate from -40°C to 125°C The FODM8801 consists of an aluminum gallium arsenide infrared LED optically coupled to a phototransistor. |
| 2003-03-31 | Mitsubishi to retain photonic, RF components in IC unit Mitsubishi will retain its optoelectronic and microwave/RF businesses in a new Semiconductor Division within Mitsubishi Electric & Electronic USA Inc. |
| 2003-06-27 | Mitsubishi GaAs FET targets 14GHz apps The Semiconductor Division of Mitsubishi Electric & Electronics Inc. has introduced two GaAs HFET products. |
| 2005-09-16 | Mimix's new GaAs amp with self-biased, single supply design Mimix Broadband introduced a GaAs two-stage low noise gain block amplifier that has a self-biased, single supply design |
| 2005-08-11 | Mimix's integrated Rx/Tx chipset targets 18GHz to 25GHz Mimix's new GaAs MMIC sub-harmonically pumped receiver and transmitter devices integrate an image reject sub-harmonic anti-parallel diode mixer, an LO buffer amplifier and a low noise amplifier for the receiver, and an output amplifier for the transmitter. |
| 2006-02-02 | LNAs support satcom, radio systems Mimix expanded its product line of gallium arsenide monolithic microwave IC low noise amplifiers with three new amps. |
| 2006-06-19 | LNAs for cellular, WiMAX start sampling RFMD has started sampling five new GaAS pHEMT low noise amplifiers for GSM, CDMA, UMTS, EDGE and WiMAX air interface standards. |
| 2005-07-15 | Ka-band PAs and doubler target wireless communications apps Mimix Broadband introduced a new line of Ka-band GaAs monolithic microwave integrated circuit products, including power amplifiers and a doubler, covering the 27GHz to 34GHz frequency bands |
| 2004-01-16 | Hybrid bipolar transistor emits light Integrated optoelectronics could get a boost from the discovery of a bipolar transistor that emits light from its base region. |
| 2005-04-20 | High-power amp IC boosts signals for military, communications apps Mimix Broadband introduced a GaAs MMIC two-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing. |
| 2005-09-05 | HBTs deliver 0.75dB noise at 6GHz Infineon Technologies unveiled its new SiGe:C process technology for cost-effective, high-performance RF semiconductor devices. |
| 2000-03-20 | GaAs optoelectronic ICs for Gigabit Ethernet This paper describes the Gigabit Ethernet market and the various GaAs ICs and OEICs available. |
| 2011-08-31 | GaAs ICs market to reach $320M in 2015 Market research firm Strategy Analytics has projected the global market for GaAs semiconductors to reach about $320 million in 2015 from roughly $205 million in 2011. |
| 2014-04-23 | GaAs cell scores 14% conversion efficiency with zinc oxide Researchers modified the surface of a 9mm2 gallium arsenide solar cell through a chemical synthesis of thin films, nanostructures and nanoparticles to squash the sun's reflection and maximise the light absorbed. |
| 2005-07-21 | Fiber comm benefit from ROSA Hamamatsu introduced the G9735-14 receiver optical sub-assembly (ROSA) that combines a Gallium Arsenide PIN photodiode and preamp to create an integrated solution in a 1.25mm diameter sleeve. |
| 2005-09-15 | FET surpasses GaAs FETs Toshiba has announced development of a GaN power FET that is touted to surpass the operating performance of the GaAs FET widely used in base stations for terrestrial and satellite microwave communications |
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