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2005-07-06 Transistor's gate stack structure uses Hf-based, high-k dielectric
NEC Corp. has announced the development of a transistor featuring a new gate stack structure using a Hf-based, high-k dielectric and a metal gate electrode
2003-06-12 Toshiba transistor made from HfSiON
Toshiba Corp. has developed a CMOS transistor that reduces gate leakage current to 1/1,000 that of conventional CMOS devices.
2007-12-13 IMEC reports progress on high-k metal gates at 32nm
IMEC reported progress in improving the performance of planar CMOS using hafnium-based high-k dielectrics and tantalum-carbide metal gates targeting the 32nm CMOS node.
2005-10-06 Fluorine sweeps high-k defects out of the gate
Hafnium oxide, the anointed successor to silicon dioxide in the gate stack, has a new ally: fluorine.
2012-04-09 Advantages of resistive RAM for next-gen NVM
Here's a discussion on the strengths of hafnium-oxide-based resistive RAM cells, and the main challenges ahead for this technology.
2008-01-25 45nm: What Intel didn't tell you
Some high points of Intel's 45nm HKMG technology are: high-k first, metal-gate-last integration; hafnium oxide (HfO2) gate dielectric (1nm EOT); and dual band-edge work function metal gates (TiN for PMOS; TiAlN for NMOS). The gate-last integration is one point that needs a bit of clarification in the Intel process flow.
2016-05-05 Using memristors to build an electronic brain
The Moscow Institute of Physics and Technology is perfecting an analogue electronic brain by using hafnium oxide memristors to mimic synapses.
2015-10-05 Using 16nm FinFET as a resistive memory device
An IEDM paper is set to demonstrate that hafnium-dioxide high-k dielectric material, which is used in the high-k metal gate (HKMG) of a 16nm FinFET, can also be turned into a ReRAM device.
2008-02-01 Saving Moore's Law and reinventing transistors
Intel CEO Paul Otellini talks about surprising performance-per-watt gains from its hafnium transistors, the future of mobile and ultra-mobile devices and of course, all the big issues that affect Intel's channel.
2007-11-22 NEC jumpstarts 40nm process, eDRAM tech
NEC Electronics has unveiled a 40nm logic process that makes use of a one-two punch: hafnium-based high-k dielectric materials and nickel-silicide gate electrodes.
2013-02-18 Insulator interfaces ease nanomaterial design
Researchers developed insulators called 'high-k dielectrics' that link heavier elements, such as hafnium or zirconium, into insulating oxide films touting exceptional charge-isolating capabilities.
2009-04-09 Unlock Micron's 50nm DRAM technology
With their latest 50nm process technology, Micron Technology Inc. seems to have struck the right balance between investment in new technologies and conservative design decisions.
2005-04-29 TSMC sees low-power process as new technology driver
Changing its strategy in midstream, Taiwan Semiconductor Mfg Co. Ltd (TSMC) this week made a major but overlooked announcement.
2008-10-03 TSMC delays high-k offering to 28nm
Taiwan Semiconductor Manufacturing Co. Ltd has rolled out its 28nm process and disclosed it will push out its initial high-k/metal-gate offering until 28nm, putting it slightly behind its rivals in Chartered, IBM and Samsung.
2007-06-15 TI to use high-k dielectrics for 45nm node
TI this week entered the high-k dielectrics arena, announcing plans to integrate this material for its high-performance chips at the 45nm node.
2008-12-17 Tech firms detail high-k developments
IBM, Intel, TSMC and the NEC-Toshiba duo are expected to present papers on 32nm processes with high-k and metal gates at this week's International Electron Devices Meeting (IEDM).
2004-05-31 Tech coalition develops ultra-thin CMOS process technology
STMicroelectronics, CEA-Leti and Aixtron have developed an advanced process technology for the creation of ultra-thin transistor-gate-insulation layers for low-power applications at the 65nm and 45nm CMOS transistor technology nodes.
2006-06-02 Symposium to mull 45nm challenges
Technologists attending the 2006 Symposium on VLSI Technology in mid-June will hear about multiple facets of 45nm processes
2009-12-11 ST chooses Applied Materials' HKMG for 28nm
HKMG is an emerging technology that allows faster switching speed while reducing device power consumption.
2004-06-17 SOI mobility harmed by scattering, Toshiba researchers report
As silicon-on-insulator CMOS devices shrink into the ultra-thin body range, carrier mobility in fully depleted silicon-on-insulator transistors is affected adversely by scattering effects, a team of researchers based at Toshiba Corp. reported here at the IEEE 2004 Silicon Nanoelectronics Workshop.
2004-09-14 Samsung begins making DRAMs on 90nm process
South Korean electronics giant Samsung Electronics Co. Ltd has started mass producing 512Mbit double data rate synchronous DRAMs using a 90nm manufacturing process and 300mm diameter wafers.
2008-03-03 Report: Sun leaks info on Intel's Nehalem, Dunnington
Sun Microsystems last week reportedly leaked on its public Web server slides that provided some details of an upcoming six-core processor from Intel code-named Dunnington as well as more information on Nehalem, Penryn's successor.
2007-11-01 Processor battle moves to the cores
The latest maneuvers in the chess match between Advanced Micro Devices Inc. and Intel Corp. find the rivals advancing toward similar architectures.
2014-06-30 NV memory: Significance of filament size and shape
Many presenters in VLSI 2014 are seeking to improve performance and increase the understanding of ReRAM/RRAM operation. However, there is still no clear winner when it comes to material or memory type.
2008-09-19 Nokia grabs top spot in green electronics list
Greenpeace's latest Guide to Greener Electronics revealed that five leading brands are making significant progress in greening their electronics products.
2007-10-29 New Intel fab ramps up 45nm chip production
Intel has started production of new-generation microprocessors for PCs, servers and other computing devices at its first high-volume 45nm manufacturing factory in Chandler, Arizona.
2006-09-14 NEC introduces 'first' 55nm CMOS-compatible eDRAM tech
NEC Electronics and its subsidiaries announced the industry's first 55nm CMOS-compatible embedded DRAM technology.
2004-11-01 NEC claims breakthrough in high-k dielectrics
Researchers call high-k film in chip-making process reliable and good for a 10-year run.
2010-08-11 Naysayers, optimists clash on DRAM forecasts
Industry players and watchers have conflicting outlooks when it comes to forecasting DRAM supply and demand.
2010-06-04 Nanowire transistors key to planar challenges
IBM T.J. Watson Research Center researchers have developed a series of functional 25-stage ring oscillators using silicon nanowire transistors with diameters down to 2.6nm.
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